• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1281-1286
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• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.1
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• pp.17-22
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• 2011

As the quality of a weld joint is strongly influenced by process parameters the welding process, an intelligent algorithms that can predict the bead geometry and shape to accomplish the desired mechanical properties of the weldment should be developed. In this study, prepared by ${\Phi}1.6mm$ GMA welding of metal wire nose Advice jowelui 350A 600A grade level inverter welder and DAIHEN SCR's were carried out using welding. Welding conditions were 5.5m/min wire feed rate the welding current is rapidly transmit approximately 260A, welding voltage was about 30V. CTWD a 22mm, shielding gas was Ar 20L/min and the welding speed was a 240mm/min. Using data collected during welding equipment welding current and welding voltage waveform was analyzed by measuring the volume of the transition mode. Addition of $CaCO_3$ as a loss of the spread of the weld bead dilution rate decreased, suggesting that, GMA in the overlay welding bead shape control, dilution control and may be used as a welding flux is considered. Stabilizing effect of the arc by the Ca-containing $CaF_2$, $CaCO_3$, $CaMg(CO_3)_2$, respectively, welding flux 0.1wt.% added GMA welding and weld overlay were evaluated with dilution, $CaF_2$, and $CaMg(CO_3)_2$ added to the dilution of Seemed to increase.

• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.22-28
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• 2019

To maximize the oxygen evolution reaction (OER) in the electrolysis of water, nano-grade $IrO_2$ powder with a low specific surface was prepared as a catalyst for a solid polymer electrolyte (SPE) system, and a membrane electrode assembly (MEA) was prepared with a catalyst loading as low as $2mg\;cm^{-2}$ or less. The $IrO_2$ catalyst was composed of heterogeneous particles with particle sizes ranging from 20 to 70 nm, having a specific surface area of $3.8m^2g^{-1}$. The anode catalyst layer of about $5{\mu}m$ thickness was coated on the membrane (Nafion 117) for the MEA by the decal method. Scanning electron microscopy (SEM) and electrochemical impedance spectroscopy (EIS) confirmed strong adhesion at the interface between the membrane and the catalyst electrode. Although the loading of the $IrO_2$ catalyst was as low as $1.1-1.7mg\;cm^{-2}$, the SPE cell delivered a voltage of 1.88-1.93 V at a current density of $1A\;cm^{-2}$ and operating temperature of $80^{\circ}C$. That is, it was observed that the over-potential of the cell for the oxygen evolution reaction (OER) decreased with increasing $IrO_2$ catalyst loading. The electrochemical stability of the MEA was investigated in the electrolysis of water at a current density of $1A\;cm^{-2}$ for a short time. A voltage of ~2.0 V was maintained without any remarkable deterioration of the MEA characteristics.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1067-1072
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• 2009

YBCO coated conductor is named by second generation superconductor tapes. It is different with first generation superconductor tapes. YBCO coated conductor's specific difference with Bi-2223/Ag tape is more strong mechanical durability. This is important role to apply to superconducting machines. For mechanical transforming of YBCO coated conductors, we are using the well designed former. The merit of transformation is several. First, we vary the superconducting characteristics according to mechanical stress. Second, we reduce the volume of superconductor, so we achieve reducing the volume of superconducting machines. On this study, we experiment the transporting current characteristics of one types YBCO coated conductor. YBCO coated conductor with Ie of 70 A and voltage grade of 0.6 V/cm were connected to spiral former to conduct current application test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.4
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• pp.100-110
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• 1995

This paper aims at reviewing the possibility of application over normal or abnormal, detection used by AE, and the characteristics of grinding processes. In this study, when WA-vitri-fied ' resinoid bond grinding wheels:36 kinds of grinding wheel and grinding depth were tuned at the surface grinding, the zone of AE signal generation is theoretically modelled and reviewed by grinding processes. The variation of grinding resistance( F$n^{9}$ $F_{t}$) and AE signal is detected in-process by the use of AE measuring system. The tests are carried out in accordance with grain size and grade of grinding wheels, and work-pieces-STD11 and STD61. According to the experiment's results, the following can be expected;as grinding time passes by, the relation of grinding depth and quantity of AE signal, observing on AE signal and grinding burn suggest the characteristics of grinding processes and evalution on the possibility of control of grinding machine, and monitoring abnormal conditions.e, and monitoring abnormal conditions.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.741-748
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• 2005

Power saving module which is consisted of ferroelectric ceramic capacitor and time delay switching circuit was installed into electronic ballast in order to enhance energy efficacy and extend life time of fluorescent lamp. The impedance matching of negative resistance characteristics of F/L was optimized with the characteristics of ferroelectric ceramics capacitor to increase the light efficiency of the electronic ballast. The high efficiency of the electronic ballast was achieved by minimizing wasted power at the filament of F/L during the lighting by using the switching function of time delay circuit from preheating mode to non-preheating mode. The life time of F/L was also extended by eliminating the reverse electromotive force using time delay circuits to minimize the impacts to the filament of F/L from unwanted high voltage peaks during light-up period. As the results, the electronic ballast with the first grade energy efficiency was developed using ferroelectric ceramics and time delay module.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.87-94
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• 2001

A soft error rate for DRAM was predicted in connection with the leakage current in cell capacitor. The charge in cell capacitor was decreased during the DRAM operation, and soft error retes due to the leakage current were calculated in various operation mode of DRAM. It was found that the soft error rate of the /bit mode was dominant with small leakage current, but as increasing the leakage current memory mode shown the dominant effect on soft error rate. Using the 256M grade DRAM structure it was predicted that the soft error rate was influenced by the change of the cell capacitance, bit line capacitance, and the input voltage sensitivity of sense amplifier, and these results can be used to the design of the optimum cells in the next generation DRAM development.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.217-219
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• 2005

To detect partial discharge of 154kV joint box, we have made experiment by using the HFCT sensor. Generally the signals which are detected in partial discharge test of underground power transmission cable are accompanied with both noises of high voltage and noises of surrounding power cable. The most noise in near to end part of joint box is corona, beside other noises flowed from surrounding area. Partial discharge test is difficulty due to these noises. First, we test reliability on both injection of calibration signal in NJB and removal of low frequency. After that, we had analyzed frequencies by measuring signals in IJB with 300[m] distance from NJB. Also we had measured S/N ratio by using the indirected injection method of calibration signal in IJB. In this experiment, two measurement methods were difference of detection acquisition, but these had the equal frequency properties.