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http://dx.doi.org/10.4313/JKEM.2011.24.7.525

Analysis of Electrical Characteristics of Low Temperature and High Temperature Poly Silicon TFTs(Thin Film Transistors) by Step Annealing  

Lee, Jin-Min (Institute of Research and Development, ElnT.Co.,Ltd.)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.7, 2011 , pp. 525-531 More about this Journal
Abstract
In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.
Keywords
N channel polycrystalline silicon thin film transistor; High temperature TFT; Low temperature TFT; Step annealing, Excimer laser; Solid phase crystallization; USN (ubiquitous sensor network);
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