• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.1-7
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• 2008

This paper proposes 3.3V input and 1.8V output voltage mode step-down DC-DC buck converter for wireless mobile system which is designed in a standard 0.35$\mu$m CMOS process. The proposed capacitor multiplier method can minimize error amplifier compensation block size by 30%. It allows the compensation block of DC-DC converter be easily integrated on a chip. Also, we improve efficiency to 3% using low power buffer. Measurement result shows that the circuit has less than 1.17% output ripple voltage and maximum 83.9% power efficiency.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.5
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• pp.219-225
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• 2014

This paper describes an IC for Power Factor Correction. It can use electrical appliances which convert power from AC to DC. The power factor can be influenced not only phase difference of voltage and current but also sudden change of current waveform. This circuit enables current wave supplied to load by close to sinusoidal and minimum phase difference of voltage and current waveform. A self oscillated 10[kHz]~100[kHz] pulse signal converted to PWM waveform and it chops rectified full wave AC power which flows to load device. The multiplier and zero current detector circuit, UVLO, OVP, BGR circuits were designed. This IC has been designed and whole chip simulation use 0.5[um] double poly, double metal 20[V] CMOS process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.2
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• pp.46-51
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• 2000

The generation of the intensive ultrasonic waves depend mainly on the energy conversion efficiency depending on high frequency oscillation of the generator and the control performance of stable output depending on load variation, respectively. In this dissertation, a new configuration of ultrasonic generator is specially proposed and designed for improving both efficiency and stability. The generating frequency is turned by a PLL. which is controlled through the detection on phase difference between outputs and currents of the loads and the output amplitude of MOSFET, Q1 are controlled by their products through the multiplier, which results in the control of the amplitude of voltage controlled oscillation. And finally, the proposed and designed ultrasonic generator is composed by the combination of the function in mentioned above. the analysis results of the proposed circuit shows a good agreement between simulations and experiments.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.7
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• pp.513-518
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• 2016

The piezoelectric actuating device is known for its large power density and simple structure. It can generate a larger force than a conventional actuator and has also wide bandwidth with fast response in a compact size. To control the piezoelectric actuator, we need an analog signal conditioning circuit as well as digital microcontrollers. Conventional microcontrollers are not equipped with an analog part and need digital-to-analog converters, which makes the system bulky compared with the small size of piezoelectric devices. To overcome these weaknesses, we are developing a single-chip controller that can handle analog and digital signals simultaneously using mixed-signal FPGA technology. This gives more flexibility than traditional fixed-function microcontrollers, and the control speed can be increased greatly due to the parallel processing characteristics of the FPGA. In this paper, we developed a floating-point multiplier, PWM generator, 80-kHz power control loop, and 1-kHz position feedback control loop using a single mixed-signal FPGA. It takes only 50 ns for single floating-point multiplication. The PWM generator gives two outputs to control the charging and discharging of the high-voltage output capacitor. Through experimentation and simulation, it is demonstrated that the designed control loops work properly in a real environment.

• Proceedings of the Korea Information Processing Society Conference
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• 2010.11a
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• pp.1760-1762
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• 2010

본 논문에서 3치가산기와 승산기(multiplier)는 전류모드 CMOS에 의해서 구현된다. 첫째, 3치 T-gate를 집적회로 설계의 유효 가용성을 갖고 있는 전류모드 CMOS를 이용하여 구현한다. 둘째, 3치 T-gates를 이용해 회로가 유한체 GF (3)에 대하여 2변수 3치 가산표 (2-variable ternary addition table) 및 구구표 (multiplication table)가 실현되도록 구현한다. 마지막으로, 이러한 동작 회로들은 1.5 CMOS 표준 기술과 $15{\mu}A$ 단위전류(unit current) 및 3.3V 소스 전압 (VDD voltage)에 의해 활성화 된다. 활성화 결과는 만족할 만한 전류 특성을 나타냈다. 전류 모드 CMOS에 의하여 실행되는 3치가산기 및 승산기는 단순하며 와이어 라우팅(wire routing)에 대하여 정규적이고, 또한 셀 배열 (cell array)과 함께 모듈성 (modularity)의 특성을 갖고 있다.

• Journal of Power Electronics
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• v.19 no.4
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• pp.894-906
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• 2019

In this paper, a DC-DC converter is proposed based on the Cuk converter. The proposed converter has high efficiency and it can be used in multilevel DC-DC converters. A reduction of the inductors size in comparison to Cuk converter and a reduction in the inductors resistance negative effects on efficiency are the important points of the proposed converter. Its voltage ripple is reduced when compared to other converters. Its output voltage has a high quality and does not contain spikes. A theoretical analysis demonstrates the positive points of the proposed converter. The design and analysis of the converter are done in continues conduction mode (CCM). Experiments confirm the obtained theoretical equations. The proposed converter voltage gain is similar to that of a conventional Boost converter. As a result, they are compared. The comparison illustrates the advantages of the proposed converter and its higher quality. Furthermore, a prototype of the proposed converter and its combination with a 2x multiplier are built in the lab. Experimental results validate the analysis. In addition, they are in good agreements with each other.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.21-26
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• 2016

This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.115-122
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• 2004

In this paper, the multiple-valued adders and multipliers are implemented by current-mode CMOS. First, we implement the 3-valued T-gate and the 4-valued T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second we implement the circuits to be realized 2-variable 3-valued addition table and multiplication table over finite fields $GF(3^2)$, and 2-variable 4-valued addition table and multiplication table over finite fields $GF(4^2)$ with the multiple-valued T-gates. Finally, these operation circuits are simulated under $1.5\mutextrm{m}$ CMOS standard technology, $15\mutextrm{A}$ unit current, and 3.3V VDD voltage Spice. The simulation results have shown the satisfying current characteristics. The 3-valued adder and multiplier, and the 4-valued adder and multiplier implemented by current-mode CMOS is simple and regular for wire routing and possesses the property of modularity with cell array. Also, since it is expansible for the addition and multiplication of two polynomials in the finite field with very large m, it is suitable for VLSI implementation.

• The KIPS Transactions:PartA
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• v.15A no.2
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• pp.69-74
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• 2008

This paper proposes a structure of low-power MOS current-mode logic circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The $16\;{\times}\;16$ bit parallel multiplier is designed by the proposed circuit structure. Comparing with the conventional MOS current-model logic circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/50. This circuit is designed with Samsung $0.35\;{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.