• Title/Summary/Keyword: Via

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A Study on the Ball-off of Via Balls Bonded by Solder Paste (Solder Paste로 접합된 비아볼의 Ball-off에 관한 연구)

  • Kim, Kyoung-Su;Kim, Jin-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.575-579
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    • 2004
  • Package reliability test was conducted to investigate the effect of solder paste composition at BGA Package. It was found that the shape and size of the phase form are affected by the processing parameters. The material have used to fill in the via was Sn/36Pb/2Ag and Sn/0.75Cu type solder paste. Sn/36Pb/2Ag and Sn/0.75Cu paste were fabricated on Tape-BGA substrates by screen printing process, and via ball mount data were characterized with variations of dwell time of 85 seconds at reflow peak temperature at 22$0^{\circ}C$ or 24$0^{\circ}C$. The test condition was MRT 30 $^{\circ}C$/60 %RH/96 HR. Failures formed of a ball-off in solder paste process were observed by using a Optical Microscope and SEM(Scanning Electron Microscope). It was concluded that intermetallic layer growth played important roles in increasing solder fatigue strength for addition of Ag composition. The degradation of shear strength of solder composition is discussed.

Efficient navigation control of a Remote Controllable Mobile Robot (원격제어 이동로봇의 효율적 주행제어)

  • Jung Ji bong;Lee Sang-sik;Shin Wee-jae
    • Journal of the Institute of Convergence Signal Processing
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    • v.1 no.2
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    • pp.160-168
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    • 2000
  • In this paper, we study how the remote controllable mobile robot which could come to many via points with FLC(Fuzzy Logic Control) efficiently. The fabricated robot stop after the movement of single path method by four kinds of commands (forward, backward, turn left, turn right). To reduce disadvantages of this driving type, this paper reduce via points to goal position base on map which get from senor, let robot drive via point to via point on optimized path. An algorithm for the avoidance of unexpected obstacles by FLC is developed. And these algorithms are confirmed by computer simulations

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Effect of Process Parameters on TSV Formation Using Deep Reactive Ion Etching (DRIE 공정 변수에 따른 TSV 형성에 미치는 영향)

  • Kim, Kwang-Seok;Lee, Young-Chul;Ahn, Jee-Hyuk;Song, Jun Yeob;Yoo, Choong D.;Jung, Seung-Boo
    • Korean Journal of Metals and Materials
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    • v.48 no.11
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    • pp.1028-1034
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    • 2010
  • In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

λ/64-spaced compact ESPAR antenna via analog RF switches for a single RF chain MIMO system

  • Lee, Jung-Nam;Lee, Yong-Ho;Lee, Kwang-Chun;Kim, Tae Joong
    • ETRI Journal
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    • v.41 no.4
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    • pp.536-548
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    • 2019
  • In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at ${\lambda}/64$, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz-3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a $4{\times}4$ BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four-conventional monopole antenna.

Long-Term Outcomes of Placement of a Single Transverse Stent through the Anterior Communicating Artery via the Nondominant A1 in Coil Embolization of Wide-Necked Anterior Communicating Artery Aneurysms

  • Ban, Seung Pil;Kwon, O-Ki;Kim, Young Deok
    • Journal of Korean Neurosurgical Society
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    • v.65 no.1
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    • pp.40-48
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    • 2022
  • Objective : Placement of a single transverse stent via the nondominant A1 across the anterior communicating artery (AComA) into the contralateral A2 can provide sufficient neck coverage for wide-necked bifurcation AComA aneurysms. The authors described the feasibility, safety and long-term outcomes of this technique. Methods : Between January 2015 and February 2018, placement of a single transverse stent via the nondominant A1 was attempted in 17 wide-necked bifurcation AComA aneurysms. The authors reviewed the medical records and radiological studies. Results : The technical success rate was 94.1% (16/17). Periprocedural thromboembolic complications occurred in one patient (6.3%) without permanent neurological deficits. The mean clinical follow-up duration was 39.9±9.8 months. No deaths or delayed thromboembolic complications occurred. The mean angiographic follow-up duration was 38.9±9.8 months. The immediate and final follow-up complete occlusion rates were 87.4 and 93.7%, respectively. There was no recanalization during the follow-up period. Conclusion : Placement of a single transverse stent via the nondominant A1 across the AComA into the contralateral A2 is a feasible and relatively safe endovascular technique for the treatment of wide-necked bifurcation AComA aneurysms, with good long-term occlusion rates and a reasonable complication rate, if only the nondominant A1 is applicable.

The Effects of Digital Literacy and the Frequency of Contact with Children or Grandchildren via ICT on the Cognitive Function of the Elderly (ICT를 활용한 자녀·손자녀와의 접촉빈도와 디지털 리터러시가 노인의 인지기능에 미치는 영향)

  • Lee, Jaegyeong;Tak, Sunghee H
    • 한국노년학
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    • v.40 no.3
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    • pp.413-428
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    • 2020
  • The purpose of this study was to analyze the effects of digital literacy and the frequency of contact with children or grandchildren via ICT on cognitive functions of 8,942 adults over age 65 who responded to the 2017 National Survey of Older Koreans, using multiple regression analysis. We found that digital literacy was the most significant factor on cognitive functions of the elderly. Also, the frequency of contact with grandchildren via ICT was a positive factor for cognitive function and had a positive correlation with digital literacy. Based on this results, the importance of digital literacy education and intergenerational communication via ICT were discussed.

A Study on the EMC Characteristics of Bare PCB for Reliability of High-Multilayer PCB (고다층 보드 신뢰성 확보를 위한 베어보드 EMC 특성 연구)

  • Jin Sung Park;Kihyun Kim;Kyoung Min Kim;Sung Yong Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.94-98
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    • 2023
  • In the case of high-speed data transmission on high multilayer boards, signal coherence is a problem, especially due to the via hole, and a solution to improve return loss or insertion loss by applying a back drill to the via hole is being proposed. In this paper, Near-Field Electromagnetic measurements were made on a high multilayer board to determine how the presence or absence of back drill affects signal consistency. For this purpose, we used a signal generator, spectrum analyzer, and EMC scanner on a test board to determine if it is possible to distinguish between areas with and without back drill in the via holes of the stubs on the board. Also, we analyzed the measured value of S11, S21 and EMC etc. for how much it improves the signal attenuation of the stub with back drill. Through this, we knew that less electromagnetic waves are generated the stub via with back drill. At future research, we will analyze how much it improves the signal loss and electromagnetic waves due to the depth of back drill.

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Electro-Thermal Annealing of 3D NAND Flash Memory Using Through-Silicon Via for Improved Heat Distribution (Through-Silicon Via를 활용한 3D NAND Flash Memory의 전열 어닐링 발열 균일성 개선)

  • Young-Seo Son;Khwang-Sun Lee;Yu-Jin Kim;Jun-Young Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.1
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    • pp.23-28
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    • 2023
  • This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

The Comparison of Bunsen Reaction With Phase Separation in Sulfur-lodine Thermochemical Hydrogen Production Process (황-요오드 열화학 수소 제조 공정에서 분젠 반응과 상 분리 비고)

  • Lee, Kwang-Jin;Ahn, Sueng-Hyuk;Kim, Young-Ho;Park, Chu-Sik;Bae, Ki-Kwang
    • Journal of Hydrogen and New Energy
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    • v.19 no.2
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    • pp.111-117
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    • 2008
  • A Bunsen reaction section is a primary stage of Sulfur-iodine thermochemical hydrogen production cycle. This section is important, because it decides the efficiency of next stages. In order to produce hydrogen very efficiently, the characteristics of Bunsen reaction were investigated via two experimental methods. The one is a phase separation of $H_2SO_4-HI-H_2O-I_2$ mixture system, and the other is a direct Bunsen reaction. The characteristics of each method were investigated and compared. As the result of this study, the amount of HI and $I_2$ in $H_2SO_4$ phase via Bunsen reaction was more decreased than that via $H_2SO_4-HI-H_2O-I_2$ mixture system with increasing $I_2$ concentration. However, the amount of $H_2SO_4$ in $HI_x$ phase via Bunsen reaction was remarkably increased with increasing $I_2$ concentration, while that via $H_2SO_4-HI-H_2O-I_2$ mixture system was decreased. On the other hand, the range of initial composition which is able to separate into two liquid phases without $I_2$ solidification was almost alike.

Fabrication of Through-hole Interconnect in Si Wafer for 3D Package (3D 패키지용 관통 전극 형성에 관한 연구)

  • Kim, Dae-Gon;Kim, Jong-Woong;Ha, Sang-Su;Jung, Jae-Pil;Shin, Young-Eui;Moon, Jeong-Hoon;Jung, Seung-Boo
    • Journal of Welding and Joining
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    • v.24 no.2
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    • pp.64-70
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    • 2006
  • The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.