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http://dx.doi.org/10.3365/KJMM.2010.48.11.1028

Effect of Process Parameters on TSV Formation Using Deep Reactive Ion Etching  

Kim, Kwang-Seok (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Lee, Young-Chul (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Ahn, Jee-Hyuk (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Song, Jun Yeob (Korea Institute of Machinery & Materials)
Yoo, Choong D. (Department of Mechanical Engineering, KAIST)
Jung, Seung-Boo (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Publication Information
Korean Journal of Metals and Materials / v.48, no.11, 2010 , pp. 1028-1034 More about this Journal
Abstract
In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.
Keywords
TSV; Bosch process; DRIE; ICP; via profile;
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Times Cited By KSCI : 4  (Citation Analysis)
Times Cited By SCOPUS : 9
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1 Y. Wu, C. Chang, C. Wang, C. Kao, C. Kuo, and A. Ku, Microelectronic Engineering 86, 33 (2009).   DOI   ScienceOn
2 J. A. Kittla, K. Opsomera, M. Popovicia, N. Menoua, B. Kaczera, X. P. Wanga, C. Adelmanna, M. A. Pawlaka, K. Tomidaa, A. Rothschilda, B. Govoreanua, R. Degraevea, M. Schaekersa, M. Zahida, A. Delabiea, J. Meersschauta, W. Polspoela, S. Climaa, G. Pourtoisa, W. Knaepenb, C. Detavernierb, V. V. Afanas'evc, T. Blombergd, D. Pierreuxe, J. Swertse, P. Fischere, J. W. Maese, D. Mangerf, W. Vandervorsta, T. Conarda, A. Franqueta, P. Faviaa, H. Bendera, B. Brijsa, S. Van Elshochta, M. Jurczaka, J. Van Houdta, and D. J. Woutersa, Microelectronic Engineering 86, 1789 (2009).   DOI   ScienceOn
3 M. S. Yoon, J. Microelectron. Packag. Soc. 16, 1 (2009).
4 M. Samber, E. Grunsven, G. Kums, A. Lugt, and H. Vries, Mater. Res. Soc. Symp. Proc. (eds. Roozeboom F., Bower C., Garrou P., Koyanagi M., Ramm P.), Vol. 1112, pp. 189-200, Mater. Res. Soc. Warrendale, PA, USA (2009).
5 N. Ranganathan, L. Ebin, L. Linn, L. Vincent, O. Navas, V. Kripesh, and N. Balasubramanian, Proc. of ECTC 2008, pp. 859-865 Lake Buena Vista, FL, USA (2008).
6 K. Lee and T. Oh, J. Microelectron. Packag. Soc. 13, 57 (2006).
7 J. Kim, J. Jung, S. Kim, and Park, J. J. of KWS. 23, 129 (2005).
8 Y. Park and I. Jeon, J. Kor. Inst. Met. & Mater. 42, 603 (2004).
9 F. Said and S. Al, IEEE Trans. Comp., Packag., Manufact. Technol. 21, 2 (1998).   DOI   ScienceOn
10 J. M. Yannou, Yole Development, pp. 9-264 (2008).
11 S. Park, T. Oh, Y. Eum, and J. Moon, J. Kor. Inst. Met. & Mater. 14, 63 (2007).
12 S. Hyun and C. Lee, J. of KWJS 27, 4 (2009).   과학기술학회마을
13 P. Laermer, P. Schilp, and R. Bosch Gmbh, U.S. Patent 5501893, 1996; German Patent DE4 241 045C1 (1994).
14 K. Baek, D. Kim, K. Park, J. Kang, K. Lee, and L. Do, J. of the KSPE 26, 32 (2009).   과학기술학회마을
15 H. Jansen, M. de Boer, S. Unnikrishnan, M. Louwerse, and M. Elwenspoek, J. Micromech. Microeng. 19, 033001 (2009).   DOI   ScienceOn
16 P. Garrou, C. Bower, and P. Ramm, Handbook of 3D Integration Technology and Applications of 3D Integrated Circuits, Wiley-VCH, pp. 47-91 (2008).
17 J. Vardaman, 3-D Through-Silicon Vias Become a Reality, http://www.semiconductor.net/article/CA6445435.html (2007).
18 I. U. Abhulimen, S. Polamreddy, S. Burkett, L. Cai, and L. Schaper, J. Vac. Sci. Technol. B 25, 1762 (2007).   DOI   ScienceOn
19 Y. Lee, J. Kim, K. Kim, and S. Jung, J. of KWJS 27, 32 (2009).   과학기술학회마을
20 K. Jung, W. Song, H. Lim, and C. Lee, J. V. Sci. Technol. B 28, 143 (2010).   DOI   ScienceOn
21 G. Yeom, Plasma Etching Technology, Munundang, pp. 217-221 (2005).