• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.52-53
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.593-594
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• 2008

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.45-50
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• 2004

The characteristics and reliability of implanted VCSELs are greatly influenced by the thickness of the semi-insulating layer made by ion implantation for the current confinement. We propose a simple and purely electrical method of estimating the optimum implant depth, and find that the implant front should be located 2-DBR periods above the 1 - λ cavity in order to obtain simultaneously the low threshold current and high reliability.

• Journal of the Optical Society of Korea
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• v.5 no.3
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• pp.83-89
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• 2001

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1576-1580
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• 2004

The recent trend of information communication is to focus on improving communication services in order to satisfy the customer's desire for various information. Optical transducers of Local Area Network use 850nm or 1310nm among wavelength ranges and LD as a light source. However, Vertical Cavity Surface Emitting Laser(VCSEL) which is very excellent to deal with data processing is used at long wavelength or Gbps. In this paper, after basic optical characteristics were introduced a optical transmission module was developed to be operated over GHz and its transmission characteristics were analyzed at 2.5GHz and 3GHz with pulse pattern generator.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.82-86
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• 2002

It is demonstrated that the conventional current-pulse laser drivers are not adequate in driving VCSELs operating at multi-Gb/s speeds. Simulation results, including the bonding parasitics, show that high-performance VCSELs are more efficiently driven using voltage-pulse mode of operation. The optical output power is almost doubled in the voltage-mode of operation, while the total electrical power consumption of the transmitter decreases by 20%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.51-56
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• 2012

The resonance properties of circular vertical-cavity surface-emitting lasers (VCSELs) are studied by using a newly developed equivalent network approach. Optical parameters, such as the stop-band or the reflectivity of periodic Bragg mirrors and the resonance wavelength, are explored for the design of these structures. To evaluate the differential quantum efficiency and the threshold current density, a transverse resonance condition of circular modal transmission-line theory is also utilized. This approach dramatically reduces the computational time as well as gives an explicit insight to explore the optical characteristics of circular VCSELs.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.