Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer
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Cho, N.K.
(Nano Device Research Center, KIST)
Song, J.D. (Nano Device Research Center, KIST) Choi, W.J. (Nano Device Research Center, KIST) Lee, J.I. (Nano Device Research Center, KIST) Jeon, Heon-Su (School of Physics, Seoul National University) |
1 | M. Nagai, K. Matsumoto, M. Morishima, H. Horie, Y. Niwata, and T. Hayakawa, J. Cryst. Growth 127 (1993) |
2 | L. A. Coldren, Diode lasers and photonic integrated circuits (John Wiley & Sons, Inc. 1995), p.87-93 |
3 | R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers, Appl. Phys. Lett. 67, 3795 (1995) DOI |
4 | M. G. Peters, B. J. Thibeault, D. B. Young, J. W. Scott, F. H. Peters, A. C. Gossard, and L. A. Coldren, Appl. Phys. Lett. 63, 3411 (1993) DOI ScienceOn |
5 | J. D. Song, J. M. Kim, and Y. T. Lee, J. Cryst. Growth 237-239, 1504 (2002) |
6 | J. K. Kim, T. A. Strand, R. L. Naone, and L. A. Coldren, Appl. Phys. Lett. 74, 2752 (1999) DOI ScienceOn |
7 | S. L. Chuang, Physics of optoelectronic devices (John Wiley & Sons, Inc. 1995) |
8 | S. Adachi, Properties of AlGaAs (Short Run Press Ltd., 1993) |
9 | D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, Appl. Phys. Lett. 73, 2564 (1998) DOI ScienceOn |
10 | Y. Qian, Z. H. Zhu, Y. H. Lo, D. L. Huffaker, D. G. Deppe, H. Q. Hou, B. E. Hammons, W. Lin, and Y. K. Tu, Appl. Phys. Lett. 71, 25 (1997) DOI ScienceOn |
11 | V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, Appl. Phys. Lett. 74, 2815 (1999) DOI ScienceOn |
12 | P. G. Newman, J. Pamulapati, H. Shen, M. Taysing-Lara, J. Liu, W. Chang, G. Simonis, B. Koley, M. Dagenais, S. Feld, and J. Loehr, J. Vac. Sci. Technol. B 18, 1619 (2000) DOI |
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