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Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer  

Cho, N.K. (Nano Device Research Center, KIST)
Song, J.D. (Nano Device Research Center, KIST)
Choi, W.J. (Nano Device Research Center, KIST)
Lee, J.I. (Nano Device Research Center, KIST)
Jeon, Heon-Su (School of Physics, Seoul National University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.3, 2006 , pp. 280-286 More about this Journal
Abstract
A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.
Keywords
Digital-alloy; DBR; Uniformity; VCSEL;
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  • Reference
1 M. Nagai, K. Matsumoto, M. Morishima, H. Horie, Y. Niwata, and T. Hayakawa, J. Cryst. Growth 127 (1993)
2 L. A. Coldren, Diode lasers and photonic integrated circuits (John Wiley & Sons, Inc. 1995), p.87-93
3 R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers, Appl. Phys. Lett. 67, 3795 (1995)   DOI
4 M. G. Peters, B. J. Thibeault, D. B. Young, J. W. Scott, F. H. Peters, A. C. Gossard, and L. A. Coldren, Appl. Phys. Lett. 63, 3411 (1993)   DOI   ScienceOn
5 J. D. Song, J. M. Kim, and Y. T. Lee, J. Cryst. Growth 237-239, 1504 (2002)
6 J. K. Kim, T. A. Strand, R. L. Naone, and L. A. Coldren, Appl. Phys. Lett. 74, 2752 (1999)   DOI   ScienceOn
7 S. L. Chuang, Physics of optoelectronic devices (John Wiley & Sons, Inc. 1995)
8 S. Adachi, Properties of AlGaAs (Short Run Press Ltd., 1993)
9 D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, Appl. Phys. Lett. 73, 2564 (1998)   DOI   ScienceOn
10 Y. Qian, Z. H. Zhu, Y. H. Lo, D. L. Huffaker, D. G. Deppe, H. Q. Hou, B. E. Hammons, W. Lin, and Y. K. Tu, Appl. Phys. Lett. 71, 25 (1997)   DOI   ScienceOn
11 V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, Appl. Phys. Lett. 74, 2815 (1999)   DOI   ScienceOn
12 P. G. Newman, J. Pamulapati, H. Shen, M. Taysing-Lara, J. Liu, W. Chang, G. Simonis, B. Koley, M. Dagenais, S. Feld, and J. Loehr, J. Vac. Sci. Technol. B 18, 1619 (2000)   DOI