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Optimum Implant Depth and Its Determination in Implanted Vertical Cavity Surface Emitting Lasers  

안세환 (아주대학교 전자공학부)
김상배 (아주대학교 전자공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.8, 2004 , pp. 45-50 More about this Journal
Abstract
The characteristics and reliability of implanted VCSELs are greatly influenced by the thickness of the semi-insulating layer made by ion implantation for the current confinement. We propose a simple and purely electrical method of estimating the optimum implant depth, and find that the implant front should be located 2-DBR periods above the 1 - λ cavity in order to obtain simultaneously the low threshold current and high reliability.
Keywords
VCSEL; semiconductor laser; implantation;
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