• Journal of the Korean Physical Society
• /
• 제73권9호
• /
• pp.1346-1350
• /
• 2018

An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by sorting the bare vertical-type single chip LEDs into the holes in a pocket-type shadow mask for deposition of the electrodes at the top and bottom sides of bare vertical-type single chip LEDs without the traditional substrate for electrode evaporation technology for vertical-type single chip LEDs. The variation in size of the hole between the designed shadow mask and the deposited electrodes owing to the use of the designed pocket-type shadow mask is investigated. Furthermore, the electrical and the optical properties of bare vertical-type single chip LEDs deposited with two different shapes of n-type electrodes using the pocket-type shadow mask are investigated to explore the possibility of the e-beam evaporation method.

• 동력기계공학회지
• /
• 제5권3호
• /
• pp.64-72
• /
• 2001

This paper describes an optimal design technology in a segment type vertical guide bearing for vertical rotating machinery. Segment type vertical guide bearings have widely used for vertical rotating machinery, however bearing problems, such as excessive vibration and temperature rise, frequently take place in the actual machine. Such excessive vibration magnitude and/or abnormal bearing metal temperature rise result in serious damage and economic losses. Thus the segment type vertical guide bearing should be designed to get optimal characteristics in order to maintain stable operation without bearing failure due to abnormal vibration and/or abnormal bearing metal temperature. The preload ratio is the most important parameter in designing the segment type vertical guide bearing. Because adjustment of the bearing preload by changing the bearing clearance could easily control both the bearing stiffness and the cooling effect. In the paper, the influence of the preload effects on the bearing metal temperature and the bearing stiffness has been investigated both theoretically and experimentally in order to find out an optimum preload ratio. Results show that the segment type vertical guide bearing has an optimum preload ratio at which the bearing stiffness reaches a masimum value while the bearing metal temperature is minimized.

• 대한기계학회논문집
• /
• 제16권1호
• /
• pp.95-103
• /
• 1992

본 연구에서는 주위유체가 공기인 정상 층류 상태하에서 수직 및 수평단열판 에 부착된 등온 사각비임에서의 자연대류열전달 현상을 비임의 현상비와 Grashof수를 변수로 하여 고찰 하였다.

• 한국수산과학회지
• /
• 제38권5호
• /
• pp.316-322
• /
• 2005

In order to develop a floating breakwater, which can efficiently control long period waves, vertical plates are attached in pontoon. Wave control and dynamic behaviors of the newly developed vertical plates type are verified from numerical analysis and hydraulic experiment. As a result, for the wave control and energy dissipation, the newly developed vertical plates type is more efficient than the conventional pontoon type. For the floating body motion, the wave transmission, depending on incident wave period, is decreased at the natural frequency. Dimensionless drift distance has similar trend of the reflection rate of wave transformation near natural frequency except maximum and minimum values. Dimensionless maximum tension is 17 percent of the weight of floating breakwater in case of the conventional pontoon type and 18 percent or 14 percent in case of the newly developed vertical plates type. Thus, it is shown that the wave control is improved by the vertical plates type. In addition, by adjusting the interval of the front and back vertical plate, we would control proper wave control.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2007년도 춘계학술대회
• /
• pp.470-473
• /
• 2007

Geothermal heat exchanger(GHEX) is a major component of Geothermal heat pump system(GSHPs). In Common, We use the vertical type GHEX in Korea. But vertical type GHEX needs a high cost for installation, because of drilling the hole which has 200m depth at max. So, We suggest the use of horizontal type GHEX. When we construct buildins, We excavate the ground and we can install the horizontal type GHEX at the excavated underground. It's very cheap and convenient method compare to vertical type GHEX installation. This study is peformed to estimate the peformance of horizontal type GHEX and to analyze effects of heat exchanger types and undergroundwater. As the result, slinky type GHEX has a 66% efficiency compare to vertical type GHEX and mat type has a 201% efficiency at the undergroundwater zone.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.168-169
• /
• 2007

Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. However, conventional organic field-effect transistors have lowspeed, low-power, and relatively high operational voltage. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2007년도 춘계학술대회
• /
• pp.466-469
• /
• 2007

Heat pumps are used for air-conditioning systems in commercial buildings, schools, and factories because of low operating and maintenance costs. These systems use the earth as a heat source in heating mode and a heat sink in cooling mode. Ground heat exchangers are classified by a horizontal type and vertical type according to the installation method. A horizontal type means that a heat exchanger is laid in the trench bored in 1.2 to 1.8 m depth. And a vertical type is usually constructed by placing small diameter high density polyethylene tube in a vertical borehole. Vertical tube sizes range from 20 to 40 mm nominal diameter. Borehole depth range between 100 and 200 m depending on local drilling conditions and available equipment. In this study, to evaluate the performance of single u-tube with bentonite grouting, single u-tube with broken stone grouting and double n-tube bentonite grouting of vertical ground heat exchangers, test sections are buried on the earth and experimental apparatus is installed. Therefore the heat transfer performance and pressure loss of these are estimated.

• Journal of electromagnetic engineering and science
• /
• 제18권1호
• /
• pp.35-40
• /
• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• 센서학회지
• /
• 제23권6호
• /
• pp.392-396
• /
• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 센서학회지
• /
• 제20권4호
• /
• pp.260-265
• /
• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.