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http://dx.doi.org/10.3938/jkps.73.1346

Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs  

Kim, Kyoung Hwa (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Jeon, Injun (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Cho, Chae Ryong (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Jeon, Hunsoo (Power Semiconductor Commercialization Center, Busan Techno Park)
Yang, Min (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Yi, Sam Nyung (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Kim, Suck-Whan (Department of Physics, Andong National University)
Publication Information
Journal of the Korean Physical Society / v.73, no.9, 2018 , pp. 1346-1350 More about this Journal
Abstract
An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by sorting the bare vertical-type single chip LEDs into the holes in a pocket-type shadow mask for deposition of the electrodes at the top and bottom sides of bare vertical-type single chip LEDs without the traditional substrate for electrode evaporation technology for vertical-type single chip LEDs. The variation in size of the hole between the designed shadow mask and the deposited electrodes owing to the use of the designed pocket-type shadow mask is investigated. Furthermore, the electrical and the optical properties of bare vertical-type single chip LEDs deposited with two different shapes of n-type electrodes using the pocket-type shadow mask are investigated to explore the possibility of the e-beam evaporation method.
Keywords
Thick GaN epilayer; Vertical-type single chip LEDs; Mixed-source HVPE; Shadow mask; Metallization;
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