Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지
DOI QR코드

DOI QR Code

Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs

  • Kim, Kyoung Hwa (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Ahn, Hyung Soo (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Jeon, Injun (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University) ;
  • Cho, Chae Ryong (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University) ;
  • Jeon, Hunsoo (Power Semiconductor Commercialization Center, Busan Techno Park) ;
  • Yang, Min (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Yi, Sam Nyung (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University)
  • Received : 2018.04.23
  • Accepted : 2018.06.05
  • Published : 2018.11.15
⟨ Previous Next ⟩

Abstract

An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by sorting the bare vertical-type single chip LEDs into the holes in a pocket-type shadow mask for deposition of the electrodes at the top and bottom sides of bare vertical-type single chip LEDs without the traditional substrate for electrode evaporation technology for vertical-type single chip LEDs. The variation in size of the hole between the designed shadow mask and the deposited electrodes owing to the use of the designed pocket-type shadow mask is investigated. Furthermore, the electrical and the optical properties of bare vertical-type single chip LEDs deposited with two different shapes of n-type electrodes using the pocket-type shadow mask are investigated to explore the possibility of the e-beam evaporation method.

Keywords

Acknowledgement

Supported by : Ministry of TRADE, INDUSTRY & ENERGY(MOTIE)

References

  1. J. P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov and M. A. Khan, Appl. Phys. Lett. 83, 3456 (2003). https://doi.org/10.1063/1.1623321
  2. H. Jeon, G. S. Lee, S. G. Jung, S. M. Bae, M. J. Shin, K. H. Kim, M. Yang, S. N. Yi, H. S. Ahn, Y. M. Yu, Y. Huh, S. W. Kim, H. J. Ha and N. Sawaki, Jpn. J. Appl. Phys. 51, 01AG01 (2012). https://doi.org/10.7567/JJAP.51.01AG01
  3. A. A. Allerman, M. H. Crawford, A. J. Fischer, K. H. A. Bogart, S. R. Lee, D. M. Follstaedt, P. P. Provencio and D. D. Koleske, J. Cryst. Growth 272, 227 (2004). https://doi.org/10.1016/j.jcrysgro.2004.08.035
  4. B. S. Kang, H. T. Wang, F. Ren and S. J. Pearton, J. Appl. Phys. 104, 031101 (2008). https://doi.org/10.1063/1.2959429
  5. S. R. Lee, A. F. Wright, M. H. Crawford, G. A. Petersen, J. Han and R. M. Biefeld, Appl. Phys. Lett. 74, 3344 (1999). https://doi.org/10.1063/1.123339
  6. W. Shan, J. W. Ager III, K. M. Yu and W. Walukiewicz, J. Appl. Phys. 85, 8505 (1999). https://doi.org/10.1063/1.370696
  7. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003). https://doi.org/10.1063/1.1633019
  8. V. Adivarahan, W. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska and M. A. Khan, Appl. Phys. Lett. 85, 2175 (2004). https://doi.org/10.1063/1.1796525
  9. J. Kim, J. Pyeon, M. Jeon and O. Nam, Jpn. J. Appl. Phys. 54, 081001 (2015). https://doi.org/10.7567/JJAP.54.081001
  10. M. A. Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995). https://doi.org/10.1063/1.113579
  11. P. Perlin, M. Osinski, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas and P. Sartori, Appl. Phys. Lett. 69, 1680 (1996). https://doi.org/10.1063/1.117026
  12. S. Yoshida and J. Suzuki, J. Appl. Phys. 84, 2940 (1998). https://doi.org/10.1063/1.368448
  13. O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev and H. Morkoc, Appl. Phys. Lett. 69, 3872 (1996). https://doi.org/10.1063/1.117133
  14. A. A. Yamaguchi, Appl. Phys. Lett. 96, 15911 (2010).
  15. J. Li, K. B. Nam, J. Y. Lin and H. X. Jiang, Appl. Phys. Lett. 79, 3245 (2001). https://doi.org/10.1063/1.1418255
  16. M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin and H. X. Jiang, Appl. Phys. Lett. 85, 3769 (2004). https://doi.org/10.1063/1.1809272
  17. S. L. Hwang, K. H. Kim, K. S. Jang, H. S. Jeon, W. J. Choi, J. H. Chang, H. S. Kim, M. Yang, H. S. Ahn, J. S. Bae and S. W. Kim, J. Korean Cryst. Growth and Cryst. Technol. 16, 157 (2006).
  18. H. Jeon, C. Lee, CB. Lee, M. Yang, S. N. Yi, H. S. Ahn, Y. M. Yu, S. C. Lee, S. Kim and N. Sawaki, J. Korean Phys. Soc. 67, 643 (2015). https://doi.org/10.3938/jkps.67.643
  19. K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Woo, S. M. Lee and M. Koike, Phys. Status Solidi C 4, 29 (2007). https://doi.org/10.1002/pssc.200673508
  20. T. Paskova and B. Monemar, Vacuum science and technology : Nitrides as seen by the technology (Research signpost, India 2002), p. 87.
  21. D. Kamber, Y.Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura, J. Cryst. Growth 297, 321 (2006). https://doi.org/10.1016/j.jcrysgro.2006.10.097
  22. V. Soukhoveev, A. Volkova, V. Ivantsov, O. Kovalenkov, A. Syrkin and A. Usikov, Phys. Status Solidi C 6, S333 (2009). https://doi.org/10.1002/pssc.200880906
  23. J. Tajima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada and A. Koukitu, Phys. Status Solidi C 8, 2028 (2011). https://doi.org/10.1002/pssc.201000954
  24. K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R. A. R. Leute, F. Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt and T. Passow, J. Cryst. Growth 315, 216 (2011). https://doi.org/10.1016/j.jcrysgro.2010.08.044
  25. G. S. Lee, H. Jeon, H. S. Ahn, M. Yang, S. N. Yi, Y. M. Yu, S. C. Lee, Y. Honda, N. Sawaki and S. W. Kim, Jpn. J. Appl. Phys. 56, 01AD03 (2017). https://doi.org/10.7567/JJAP.56.01AD03
  26. I. Jeon, S. G. Bae, H. Jeon, K. H. Kim, M. Yang, S. N. Yi, H. S. Ahn, Y. M. Yu, N. Sawaki and S. W. Kim, Phys. Status Solidi A 215, 1700491 (2017).