• Geomechanics and Engineering
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• v.8 no.2
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• pp.187-220
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• 2015

Soil disturbance induced by installation of mandrel driven vertical drains decreases the in situ horizontal hydraulic conductivity of the soil in the vicinity of the drains, decelerating the consolidation rate. According to available literature, several different profiles for the hydraulic conductivity variation with the radial distance from the vertical drain, influencing the excess pore water pressure dissipation rate, have been identified. In addition, it is well known that the visco-plastic properties of the soil also influence the excess pore water pressure dissipation rate and consequently the settlement rate. In this study, a numerical solution adopting an elastic visco-plastic model with nonlinear creep function incorporated in the consolidation equations has been developed to investigate the effects of disturbed zone properties on the time dependent behaviour of soft soil deposits improved with vertical drains and preloading. The employed elastic visco-plastic model is based on the framework of the modified Cam-Clay model capturing soil creep during excess pore water pressure dissipation. Besides, nonlinear variations of creep coefficient with stress and time and permeability variations during the consolidation process are considered. The predicted results have been compared with V$\ddot{a}$sby test fill measurements. According to the results, different variations of the hydraulic conductivity profile in the disturbed zone result in varying excess pore water pressure dissipation rate and consequently varying the effective vertical stresses in the soil profile. Thus, the creep coefficient and the creep strain limit are notably influenced resulting in significant changes in the predicted settlement rate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• Journal of the Korean Geosynthetics Society
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• v.6 no.2
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• pp.1-8
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• 2007

Recently, the demand for industrial and residental land are increasing with economic growth, but it is difficult to acquire areas for development with good ground condition. For efficient and balanced development of land, new development projects are being carried out not only the areas with inland but those with the soft ground as well. As soft grounds have complex engineering properties and high variations such as ground subsidence especially when their strength is low and depth is deep, we need to accurately analyze the engineering properties of soft grounds and find general measures for stable and economic design and management. Vertical drain technology is widely used to accelerate the consolidation of soft clay deposits & dredged soil under pre-loading and various types of vertical drain are used with there discharge capacity. Under field conditions, discharge capacity is changed with various reason, such as soil condition, confinement pressure, long-term clogging and folding of vertical drains and so on. Therefore, many researcher and engineer recommend the use of required discharge capacity. In this paper, the experiment study were carried out to obtain the discharge capacity of four different types of vertical drains by utilizing the large-scale model tests and the required discharge capacity was calculated by several methods.

• ETRI Journal
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• v.34 no.6
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• pp.962-965
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• 2012

In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09a
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• pp.467-472
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• 2010

Individual vacuum pressure method is soft ground improvement technique, in which a vacuum pressure can be directly applied to the vertical drain board to promote consolidation and strengthening the soft ground. This method does not require a surcharge load, different to embankment or pre-loading method. In this study, given the inner displacement of the ground where the individual vacuum pressure is applied, this dissertation aimed to reproduce the state of stress in the ground that is subject to the constraints created by the depth of improvement area. Modified Cam Clay theory which made it possible to take into account the isotropic displacement of the ground was applied to the NAP-IVP used simulation; the conception of equivalent permeability proposed by Hird was also applied so that the 3-dimensional real construction effect of drain materials could be reflected in the analysis.

• Geotechnical Engineering
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• v.13 no.3
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• pp.5-20
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• 1997

A governing equation of uncoupled three dimensional finite strain theory of consolidation is presented. This equation is suitable for relatively thick layers, possessing large strain, non-linear material property, and variable permeability. A special numerical solution procedure has to be adopted for the finite difference scheme because the solution is not stable in using Forward-Time Centered-Space (FTCS) method and the governing equation is highly non-linear. The solution is capable of predicting settlement with respect to time. The results predicted by the developed method of analysis have been compared with those of experimental tests on different types of highly compressible soils with vertical wick drain. The uncoupled three dimensional finite strain theory of consolidation appears to predict settlement behavior well. A detailed comparison shows good agreement in terms of total settlement, and reasonable agreement with respect to time.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.11a
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• pp.89-92
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• 2006

In the present study, the flow field of a mesh type suppressor with varying holes at the central portion is studied to investigate drain flow characteristics in a cylindrical tank. Further, an attempt is made to understand the changes in the flow field brought about by the suppressors of different kinds in a circular tank which ultimately prevents vortex formation. For this purpose, flow visualization studies using PIV (Particle Image Velocimetry) to determine the flow patterns in a cylindrical tank with circular cross section without suppressor and with suppressor are carried out after imparting rotation to the liquid in the tank. Results are obtained when there is no draining and with draining. The flow field is visualized both in horizontal and vertical planes.

• Geotechnical Engineering
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• v.13 no.2
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• pp.39-54
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• 1997

Laboratory testings were carried out on plastic board drains (PBDs) using large scale test apparatus to evaluate the physical properties and the drainage performance. The test results reveal that the domestic products of PBDs are well compared with the foreign prod acts as far as the quality and drainage performance are concerned. It has also been confirmed that the discharge capacity decreases with time in such a way that the air bubbles are entrapped inside kinky PBDs and these air bubbles block the water flow through PBDs. It has been found that the vacuum pressure iseffectively applicable to recover the discharge capacity affected by the entrapped air bubbles.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.4 no.1
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• pp.16-23
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• 2001

This study was conducted to analyse the relation between physical characteristics of soil surface and wild plants occurrence. Lots of natural occurrence on loamy soil and a little of natural occurrence on perlite. Those were used to observe the wild plants occurrence through the duration. Natural occurrence of wild plants were observed on uniform sand, perlite, loamy soil and 2cms loamy soil layer above the perlite. Uniform sand was compared with different height of drain ditch. The results of analysis were as followed. 1. Wild plants germinated on the uniform perlite layer, they did not grow larger. Because water in large pores of perlite surface drained rapidly and evaporated easily, therefore surface remained low moisture contents. 2. A lot of weed grew on 2cms loamy layer on perlite which stratified above the perlite layer. Because perlite had plenty of soil moisture and soil moisture moved easily from perlite to loamy soil layer. 3. Uniform loamy soil had similar occurrence on the uniform perlite. It was nearly same at surface moisture distribution but lower than layered loamy soil on perlite, and the vertical distributions at soil moisture was totally lower than 2cms loamy soil layer on perlite. 4. Wild plants were grew on uniform sand on different height of drain ditch. In this case, much more wild plants were grew on which had more higher drainage ditch. The number of wild plants occurred when it was affected by soil surface moisture, drain ditch and natural occurrence of wild plants. This could be controlled by layered soil at surface moisture. Therefore weed occurrence can control in planting ground, where soil layer would not be disturbed.