• 제목/요약/키워드: Vapor-liquid-solid mechanism

검색결과 31건 처리시간 0.026초

Growth and Characterization of P-type Doping for InAs Nanowires during Vapor-liquid-solid and Vapor-solid Growth Mechanism by MOCVD

  • Hwang, Jeongwoo;Kim, Myung Sang;Lee, Sang Jun;Shin, Jae Cheol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.328.2-328.2
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    • 2014
  • Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

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Morphology Control of Single Crystalline Rutile TiO2 Nanowires

  • Park, Yi-Seul;Lee, Jin-Seok
    • Bulletin of the Korean Chemical Society
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    • 제32권10호
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    • pp.3571-3574
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    • 2011
  • Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

진동하는 고체면에 매달린 액적의 분리 현상 (Disengagement of a Pendant Liquid Drop from a Vibrating Ceiling)

  • 김호영;강승민;강병하
    • 설비공학논문집
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    • 제13권4호
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    • pp.295-303
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    • 2001
  • Condensation of vapor on solid inherently accompanies generation of liquid drops on the solid surface. However, these drops prevent the solid surface from directly contacting the saturated vapor, thus causing thermal resistance. This work investigates a novel mechanism for enhancing the condensation process, in which the condensed drops are rapidly removed from a solid surface by imposing vibration on them. In the experiments, a water drop pendant from a solid surface is vibrated at a fixed frequency while increasing the vibration amplitude. Upon repeating the experiments using various frequencies, it is revealed that there exist resonant frequencies at which the minimum vibration amplitudes inducing a fall-off of the pendant drops are remarkably less than those at neighboring frequencies. These frequencies are supposed to correspond to the resonant frequencies for different modes of drop shape oscillations. They are compared with the resonant frequencies predicted by relatively simple analyses, and the factors causing discrepancy between then are discussed.

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S-L-S 성장기구를 이용한 양질의 골드 나노선 합성 (Synthesis of Au Nanowires Using S-L-S Mechanism)

  • 노임준;김성현;신백균;조진우
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.922-925
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    • 2012
  • Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

CVD 방법을 이용한 단결정 InSb 나노와이어의 성장과 Open/Close 시스템에서의 반응 메커니즘 연구 (Synthesis of Single-Crystalline InSb Nanowires Using CVD Method and Study of Growth Mechanism in Open and Close System)

  • 강은지;박이슬;이진석
    • 한국진공학회지
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    • 제22권6호
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    • pp.306-312
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    • 2013
  • 화학적 증기증착(Chemical Vapor Deposition, CVD) 방법을 이용하여 단결정 Indium antimonide (InSb) 나노와이어를 $SiO_2$ wafer 위에 성장시켰으며, 성장된 InSb 나노와이어의 결정성과 조성비를 X-Ray Diffraction (XRD)과 Energy Dispersive x-ray Spectroscopy (EDS)의 측정을 통하여 확인하였다. 또한, 반응 source로 사용된 InSb 분말의 기상화(vaporization) 정도를 source container의 모형, 즉 open 및 close 시스템으로 변형하여 조절하였고 이렇게 성장된 InSb 나노와이어들의 구조적 특성을 주사전자현미경(Scaning Electron Microscopy, SEM)을 통하여 자세히 분석함으로써, 그들의 성장과정을 Vapor-Liquid-Solid (VLS) 및 Vapor-Solid (VS) 메커니즘으로 설명하였다. Open-boat를 사용하여 나노와이어를 성장시켰을 경우, close-boat 의 경우와 비교하여 합성된 나노와이어의 yield가 높았으며 나노와이어의 길이와 두께도 증가하는 현상이 관측되었다. 이러한 결과는, InSb source 의 기상화 정도가 close-boat에서 보다 open-boat에서 더욱 가속화되면서 공통적으로 일어나는 VLS 성장 이외에 VS 성장이 추가적으로 진행되어지기 때문으로 추측되어진다. 또한, 반응시간을 증가시켰을 때, 나노와이어의 두께가 증가하는 결과를 통하여 InSb 나노와이어의 성장에서 VS 메커니즘이 우세하게 작용하고 있음을 확인할 수 있었다.

SLS 성장방법에 의한 SiC 나노와이어의 성장 (Growth of SiC nanowires by SLS growth mechanism)

  • 노대호;김재수;변동진;진정근;김나리;양재웅
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.116-116
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    • 2003
  • Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

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Ni/Si 기판을 사용하여 성장시킨 비결정질 $SiO_x$ 나노 와이어의 성장 메커니즘 (Direct synthesis mechanism of amorphous $SiO_x$ nanowires from Ni/Si substrate)

  • 송원영;신동익;이호준;김형섭;김상우;윤대호
    • 한국결정성장학회지
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    • 제16권6호
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    • pp.256-259
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    • 2006
  • Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

탄화규소 휘스커의 합성(I) : 반응기구의 율속반응 (Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction)

  • 최헌진;이준근
    • 한국세라믹학회지
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    • 제35권12호
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    • pp.1329-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

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Vapor Phase Lubrication을 통한 금속의 마찰 및 마멸 특성 (Characteristics of Friction and Wear of Metals Under Vapor Phase Lubrication)

  • 김대은;양지철;성인하
    • Tribology and Lubricants
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    • 제18권2호
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    • pp.109-116
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    • 2002
  • phase lubrication can be used as an alterative lubrication method to overcome the demerits of liquid and solid lubrications. In this work, the tribological characteristics of metals are investigated under vapor phase lubrication. It was found that the friction coefficient and wear volume can be controlled efficiently by the amount of vapor phase lubricant delivered to the sliding interface. The friction coefficient could be reduced to about 0.1 under vapor lubrication. Also, depending on the amount of vapor lubrication delivered to the system, the width of the wear track could be varied between 50 to 250 Um. It is shown that vapor phase lubrication mechanism is very effective to control the friction and wear phenomena without the use of excessive oil.