• 한국결정성장학회지
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• 제17권1호
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• pp.18-22
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• 2007

Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

• 한국결정성장학회지
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• 제21권3호
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• pp.119-123
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• 2011

Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

• 한국결정성장학회지
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• 제19권4호
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• pp.172-183
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• 2009

For the effects of the nonlinear temperature profiles and reduced-gravity conditions we conduct a two-dimensional numerical modeling and simulations on the physical vapor transport processes of $Hg_2Cl_2-Xe$ system in the horizontal orientation position. Our results reveal that: (1) A decrease in aspect ratio from 5 to 2 leads to an increasingly nonuniform interfacial distribution and enhances the growth rate by one-order magnitude for normal gravity and linear wall temperature conditions. (2) Increasing the molecular weight of component B, Xenon results in a reduction in the effect of solutal convection. (3) The effect of aspect ratio affects the interfacial growth rates significantly under normal gravity condition rather than under reduced gravitational environments. (4) The transition from the convection-dominated regime to the diffusion-dominated regime ranges arises near at 0.1g$_0$ for operation conditions under consideration in this study.

• 한국결정성장학회지
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• 제18권6호
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• pp.225-231
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• 2008

For an aspect ratio (transport length-to-width) of 5, Pr=1.13, Le=1.91, Pe=4.3, Cv=1.01, $P_B=20\;Torr$, the effects of addition of inert gas Ne on thermally buoyancy-driven convection ($Gr=2.44{\times}10^3$) are numerically investigated for further understanding and insight into essence of transport phenomena in two dimensional horizontal enclosures. For $10K{\leq}{\Delta}T{\leq}50\;K$, the crystal growth rate increases from 10 K up to 20 K, and then is slowly decreased until ${\Delat}T=50\;K$, which is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. The dimensional maximum velocity gratitude reflecting the intensity of thermal convection is directly and linearly proportional to the temperature difference between the source and crystal regions. The rate is first order-exponentially decreased for $2{\leq}Ar{\leq}5$. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. In addition, the rate is first order exponentially decayed for $10{\leq}P_B{\leq}200\;Torr$.

• 한국결정성장학회지
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• 제16권1호
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• 한국결정성장학회지
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• 제16권6호
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• pp.256-259
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• 2006

Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

• 한국재료학회지
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• 제16권8호
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• pp.479-484
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• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• 한국결정성장학회지
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• 제8권3호
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• pp.387-387
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400∼1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450∼750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.

• 한국결정성장학회지
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• 제8권3호
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• pp.388-395
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400~1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450~750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.

• 한국결정성장학회지
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• 제23권1호
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• pp.20-26
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• 2013

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under microgravity environments less than 1 $g_0$ exhibits a diffusive-convection mode and much uniformity in front of the crystal regions than a normal gravity acceleration of 1 $g_0$. The total molar fluxes show asymmetrical patterns in interfacial distribution, which indicates the occurrence of either one single or more than one convective cell. As the gravitational level decreases form 1 $g_0$ down to $1.0{\times}10^{-4}\;g_0$, the intensity of convection, indicative of the maximum molar fluxes, is reduced significantly for ${\Delta}T=30K$ and 90 K. The total molar fluxes decay first order exponentially with the partial pressure of component B, PB (Torr) for 20 Torr ${\leq}PB{\leq}$ 300 Torr, and two gravity accelerations of $g_y=1\;g_0$ and 0.1 $g_0$.