• Science of Emotion and Sensibility
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• v.15 no.2
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• pp.201-208
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• 2012

The objectives of this study were to investigate the psychoacoustic properties of PTFE(Poly tetra Fluoroethylene) laminated vapor permeable water repellent fabrics which are frequently used for sportswear, to examine the relationship among fabrics' basic characteristics, mechanical properties and the psychoacoustic properties, and finally to propose the predicting model to minimize the psychoacoustic fabric sound. A total of 8 specimens' frictional sound were recorded and Zwicker's psychoacoustic parameters such as loudness(Z), sharpness(Z), roughness(Z), and fluctuation strength(Z) were calculated using the Sound Quality Program. Mechanical properties of specimens were measured by KES-FB system. Loudness(Z) of specimen D-1 was the highest, which means the rustling sound of the specimen D-1 was the most noisy. Statistically significant difference among film type was observed only in loudness(Z) for fabric sound. Based on ANOVA and post-hoc test, specimens were classified into less loud PTFE film group (groupI) and loud PTFE film group (groupII). Loudness(Z) was higher when staple yarn was used compared when filament yarn was used. According to the correlation between the mechanical properties of fabrics and loudness(Z) in groupI, the shear properties, compression properties and weight showed positive correlation with loudness(Z). According to the regression equation predicting loudness(Z) of groupI, the layer variable was chosen. In groupII, variables explaining the loudness(Z) were yarn types and shear hysteresis(2HG5).

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Korean Journal of Remote Sensing
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• v.32 no.3
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• pp.263-274
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• 2016

In this study, we compared the Precipitable Water Vapor (PWV) data derived from the radiosonde observation at Sokcho observatory and the PWV data at Sokcho Global Navigation Satellite System (GNSS) observatory provided by Korea Astronomy and Space Science Institute, for the summer of 2007~2014, and analyzed the radiosonde diurnal and rainfall-dependent bias according to radiosonde sensor types. In the scatter diagram of the daytime and nighttime radiosonde PWV data and GNSS PWV data, dry bias was found in the daytime radiosonde observation as known in the previous study and dry bias of RSG-20A sensor was larger than other sensors. Overall, the tendency that the wet bias of the radiosonde PWV increased as GNSS PWV decreased and the dry bias of the radiosonde PWV increased as GNSS PWV increased. The quantitative analysis of the bias and error of the radiosonde PWV data showed that the mean bias decreased in the nighttime except for 2007, 2008 summer. In comparison for summer according to the presence or absence of rainfall, RS92-SGP sensor showed the highest quality.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.69-77
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• 2005

The electronic nose (e-nose) has been used in food industry and quality controls in plastic packaging. Recently it finds its applications in medical diagnosis, specifically on detection of diabetes, pulmonary or gastrointestinal problem, or infections by examining odors in the breath or tissues with its odor characterizing ability. Moreover, the use of portable e-nose enables the on-site measurements and analysis of vapors without extra gas-sampling units. This is expected to widen the application of the e-nose in various fields including point-of-care-test or e-health. In this study, a PDA-based portable e-nose was developed using micro-machined gas sensor array and miniaturized electronic interfaces. The rich capacities of the PDA in its computing power and various interfaces are expected to provide the rapid and application specific development of the diagnostic devices, and easy connection to other facilities through information technology (IT) infra. For performance verification of the developed portable e-nose system, Six different vapors were measured using the system. Seven different carbon-black polymer composites were used for the sensor array. The results showed the reproducibility of the measured data and the distinguishable patterns between the vapor species. Additionally, the application of two typical pattern recognition algorithms verified the possibility of the automatic vapor recognition from the portable measurements. These validated the portable e-nose based on PDA developed in this study.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.1 s.119
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• pp.38-47
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• 2007

This study was carried out to develop a new application field and obtain the basic data of citrus peel as waste in Jeju island and traditional Hanji for producing functional Hanji. The results measuring physical and optical properties, water vapor permeance and antibacterial activity are as follows. It was revealed that apparent density go as down but bulk raise up in the structural view of Hanji with increasing of the addition various Korean citrus peel (citrus unshiu, cheonggyun and hanrabong peel, and citrus unshiu peel powder) percentages, and that the density of Hanji added citrus unshiu peel was higher, but bulk was lower in compared with Hanji added other kinds of peel. Those Hanji added citrus unshiu peel, cheonggyun peel, hanrabong peel and citrus unshiu powder were very great not only in the strength (breaking length, burst index, tear index and folding endurance) but also in water vapor permeant rate in comparison with Hanji. The pHs of Hanji were neutrality (7 to 8). The brightness of the Hanji added various citrus peel percentages was low in compared to Hanji, and the 40% addition of hanrabong peel was the lowest. When 40% hanrabong peel was added to Hanji, it was very yellow in the color degree. When cheonggyun peel was added to Hanji manufacture, water vapor permeant rate was highly effective. It is known that vacant space of intrafiber was reduced by image analysis of Hanji and the additions of peel of citrus unshiu, cheonggyun and hanrabong were distributed equally in the interior of Hanji. The antibacterial activity of Hanji added citrus unshiu peel is more than 98%. After all, it would be able to increase utilization of Hanji, extensively. Namely, production of high quality Hanji added functional materials is expected for new valuable industry of citrus peel and Hanji.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.81-86
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• 2019

Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.

• Journal of Fisheries and Marine Sciences Education
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• v.14 no.2
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• pp.177-190
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• 2002

An experimental study was carried out to make clear heat transfer characteristics in flow boiling of binary mixtures of refrigerants R134a and R123 in a uniformly heated horizontal tube. Experiments were run at a pressure of 0.6 MPa both for pure fluids and mixtures in the ranges of heat flux $10{\sim}50{kW/m}^2$, vapor quality 0~100% and mass flux 150-600 $kg/m^2s$. Heat transfer coefficients of mixtures were reduced compared to the interpolated values between pure fluids both in the low quality region where the nucleate boiling is dominant and in the high quality region where the convective evaporation is dominant. Total pressure drop during two-phase flow boiling in a horizontal tube consists of the sum of two components, that is, the frictional pressure drop and pressure drop due to acceleration. The frictional pressure drop is the most difficult component to predict, and makes the most important contribution to the total pressure drop. On the other hand, the acceleration pressure drop resulting from the variation of the momentum flux caused by phase change is generally small as compared to the frictional pressure drop. There is no significant difference in measured pressure drop between mixtures and pure fluids. The correlation of Martinelli and Nelson predicted most of the present data both for pure and mixed refrigerants within 30%.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.