• Title/Summary/Keyword: Vapor quality

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A Study on Various Parameters of the PE-CVD Chamber with Wafer Guide Ring (웨이퍼 가이드링 적용에 따른 PE-CVD 챔버 변수에 대한 연구)

  • Hyun-Chul Wang;Hwa-Il Seo
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.55-59
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    • 2024
  • Plasma Enhanced Chemical Vapor Deposition (PE-CVD) is a widely used technology in semiconductor manufacturing for thin film deposition. The implementation of wafer guide rings in PE-CVD processes is crucial for enhancing efficiency and product quality by ensuring uniform deposition around wafer edges and reducing particle generation. On the other hand, to prevent overall temperature non-uniformity and degradation of thin film quality within the chamber, it is essential to consider various parameters comprehensively. In this study, after applying the wafer guide rings, temperature variations and fluid flow changes were simulated. Additionally, by simulating the temperature and flow changes when applied to the PE-CVD chamber, this paper discusses the importance of optimizing variables within the entire chamber.

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Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.286-286
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    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

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Dependance of hot-zone position on AlN single crystal growth by PVT method (PVT법에 의한 AlN 단결정 성장에서 Hot-Zone 의존성)

  • Yin, Gyong-Phil;Kang, Seung-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.2
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    • pp.84-88
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    • 2016
  • AlN single crystals were grown by the PT (Physical vapor transport) method with position-changable induction coil. And the graphite crucible dimensioned ${\Phi}90{\times}H120$ was used on processing. The temperature was $1950{\sim}2050^{\circ}C$ and ambient pressure was 150~1 Torr. And the hot-zone was changed according to times on growing for result comparison. When hot-zone by coil is located below far enough (> 40 mm) from AlN crystal concentration position, the as-grown crystals physical size is better ($300{\mu}m/hr$) than another condition, but the condition-reproducibility was very poor. However the closer the distance between hot-zone and AlN growing posion, the smaller the size of as-grown crystal and the rarer the generation of the crystal nuclear, but the crystal growing condition is stable for quality. The best condition for both growth rate and quality is gained when the starting position of hot-zone coil is about 20 mm distance from growing position. For the best growth condition, the position of hot-zone is very sensitive factor and the further more the condition of speed of coil shift also must control.

Molten-Salt-Assisted Chemical Vapor Deposition for Growth of Atomically Thin High-Quality MoS2 Monolayer (용융염 기반의 화학기상증착법을 이용한 원자층 두께의 고품질 MoS2 합성)

  • Ko, Jae Kwon;Yuk, Yeon Ji;Lim, Si Heon;Ju, Hyeon-Gyu;Kim, Hyun Ho
    • Journal of Adhesion and Interface
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    • v.22 no.2
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    • pp.57-62
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    • 2021
  • Recently, the atomically thin two-dimensional transition-metal dichalcogenides (TMDs) have received considerable attention for the application to next-generation semiconducting devices, owing to their remarkable properties including high carrier mobility. However, while a technique for growing graphene is well matured enough to achieve a wafer-scale single crystalline monolayer film, the large-area growth of high quality TMD monolayer is still a challenging issue for industrial application. In order to enlarge the size of single crystalline MoS2 monolayer, here, we systematically investigated the effect of process parameters in molten-salt-assisted chemical vapor deposition method. As a result, with optimized process parameters, we found that single crystalline monolayer MoS2 can be grown as large as 420 ㎛.

Increasing sperm production and improving cryosurvival of semen in aged Thai native roosters as affected by selenium supplementation

  • Supakorn Authaida;Ruthaiporn Ratchamak;Wuttigrai Boonkum;Vibuntita Chankitisakul
    • Animal Bioscience
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    • v.36 no.11
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    • pp.1647-1654
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    • 2023
  • Objective: Aging roosters typically exhibit subfertility with decreasing semen quality, furthermore Thai native roosters reared in rural areas are raised for a longer duration than their usual lifespan. The present study therefore aimed to assess the effect of selenium supplementation as an antioxidative substance in diets to improve the semen cryopreservation of aged roosters. Methods: Semen samples were collected from young (n = 20) and aged (n = 20) Thai native roosters (Pradu Hang Dum) at 36 and 105 weeks of age when starting the experiment, respectively. They were fed diets either non-supplemented or supplemented with selenium (0.75 ppm). Fresh semen quality and lipid peroxidation of fresh semen was evaluated before cryopreservation using the traditional liquid nitrogen vapor method. Post-thaw sperm quality and fertility potential were determined. Results: Advancing age is unrelated to decreasing fresh semen quality (p>0.05). However, lipid peroxidation in rooster semen depended on age, and the malondialdehyde (MDA) concentration increased in aged roosters (p<0.05). Selenium supplementation in diets significantly decreased the MDA concentration and increased the sperm concentration (p<0.05). In contrast, cryopreserved semen was affected by advancing rooster age, and selenium influenced sperm quality (p<0.05). Younger roosters had higher post-thaw sperm quality and fertility potential than aged roosters (p<0.05). Likewise, diet selenium supplements improved post-thaw sperm quality and fertility compared with the non-supplement group. Conclusion: Rooster's age does not influence the rooster sperm quality of fresh semen, while sperm cryotolerance and fertility were greater in young roosters than in aged roosters. However, sperm of aged roosters could be improved by dietary selenium supplementation.

Reliability Improvement of the Electro Optical Tracking System by using DLC Films (DLC 박막을 통한 전자광학추적장비 신뢰성 개선)

  • Shim, Bo-Hyun;Jo, Hee-Jin;Kim, Jang-Eun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.5
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    • pp.197-205
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    • 2015
  • The Diamond Like Carbon(DLC) films for the Electro Optical Tracking System(EOTS) by using Plasma Enhanced Chemical Vapor Deposition(PECVD) method is presented. We achieve that the DLC films can reduce the surface delamination of thermal observation sensor front window due to the high hardness, low friction and chemical inertness which is comparable to a Si film. According to our experiment results, DLC films can be used for various electro optical systems to eliminate surface delamination.

Optimized Electroplishing Process of Copper Foil Surface for Growth of Single Layer Graphene with Large Grain Size (큰 결정 크기를 가지는 단일층 그래핀 성장을 위한 구리 호일의 전해연마 공정 최적화)

  • Kim, Jaeeuk;Park, Hongsik
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.122-127
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    • 2017
  • Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

A Study on Heat Transfer Characteristics in Flow Boiling of Pure Refrigerants and Their Mixtures in Horizontal Tube (수평 전열관내 유동비등하는 순수냉매와 혼합냉매의 열전달 특성에 관한 연구)

  • 임태우;한규일
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.15 no.2
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    • pp.144-151
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    • 2003
  • An experimental study was carried out in a uniformly heated horizontal tube to examine heat transfer characteristics of pure refrigerants, R134a and R123, and their mixtures during flow boiling. The flow pattern was also observed through tubular sight glasses with an internal diameter of 10 mm located at the inlet and outlet of the test section. Tests were run at a pressure of 0.6 MPa and in the heat flux ranges of 5~100 kW/$m^2$, vapor Quality 0~100 percent and mass velocity of 150-600 kg/$m^2$s. The observed flow patterns were compared to the flow pattern map of Kattan et al., which predicted well the present data over the entire range of mass velocity employed in this study. Heat transfer coefficients of the mixture were less than the interpolated values between pure fluids both in the low quality region where the nucleate boiling is dominant and in the high quality region where the convective evaporation is dominant.

An Experimental Investigation of Heat Transfer in Forced Convective Boiling of R 134a, R 123 and R 134a/R 123 in a Horizontal Tube

  • Lim, Tae-Woo;Kim, Jun-Hyo
    • Journal of Mechanical Science and Technology
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    • v.18 no.3
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    • pp.513-525
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    • 2004
  • This paper reports an experimental study on flow boiling of pure refrigerants R l34a and R l23 and their mixtures in a uniformly heated horizontal tube. The flow pattern was observed through tubular sight glasses with an internal diameter of 10㎜ located at the inlet and outlet of the test section. Tests were run at a pressure of 0.6 MPa in the heat flux ranges of 5-50㎾/㎡, vapor quality 0-100 percent and mass velocity of 150-600㎏/㎡s. Both in the nucleate boiling-dominant region at low quality and in the two-phase convective evaporation region at higher quality where nucleation is supposed to be fully suppressed, the heat transfer coefficient for the mixture was lower than that for an equivalent pure component with the same physical properties as the mixture. The reduction of the heat transfer coefficient in mixture is explained by such mechanisms as mass transfer resistance and non-linear variation in physical properties etc. In this study, the contribution of convective evaporation, which is obtained for pure refrigerants under the suppression of nucleate boiling, is multiplied by the composition factor by Singal et al. (1984). On the basis of Chen's superposition model, a new correlation is presented for heat transfer coefficients of mixture.

Development of High-Quality Poly(3,4-ethylenedioxythiophene) Electrode Pattern Array Using SC1 Cleaning Process (SC1 세척공정을 이용한 고품질 Poly(3,4-ethylenedioxythiophene) 전극 패턴 어레이의 개발)

  • Choi, Sangil;Kim, Wondae;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.4 no.4
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    • pp.311-314
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    • 2011
  • Application of self-assembled monolayers (SAMs) to the fabrication of organic thin film transistor has been recently reported very often since it can help to provide ohmic contact between films as well as to form simple and effective electrode pattern. Accordingly, quality of these ultra-thin films is becoming more imperative. In this study, in order to manufacture a high quality SAM pattern, a hydrophobic alkylsilane monolayer and a hydrophilic aminosilane monolayer were selectively coated on $SiO_2$ surface through the consecutive procedures of a micro-contact printing (${\mu}CP$) and dip-coating methods under extremely dry condition. On a SAM pattern cleaned with SC1 solution immediately after ${\mu}CP$, poly(3,4-ethylenedioxythiophene) (PEDOT) source and drain electrode array were very selectively and nicely vapour phase polymerized. On the other side, on a SC1-untreated SAM pattern, PEDOT array was very poorly polymerized. It strongly suggests that the SC1 cleaning process effectively removes unwanted contaminants on SAM pattern, thereby resulting in very selective growth of PEDOT electrode pattern.