• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.172.2-172
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.108.1-108
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.89.1-89
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• 2002

• 센서학회지
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• 제20권4호
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• Bulletin of the Korean Chemical Society
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• 제26권11호
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• pp.1743-1748
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• 2005

This work presents that carbon dioxide, which is a main contributor to the global warming effect, could be utilized as a selective oxidant in the oxidative dehydrogenation of ethylbenzene. The dehydrogenation of ethylbenzene over alumina-supported vanadium-antimony oxide catalyst has been studied under different atmospheres such as inert nitrogen, steam, oxygen or carbon dioxide as diluent or oxidant. Among them, the addition of carbon dioxide gave the highest styrene yield (up to 82%) and styrene selectivity (up to 97%) along with stable activity. Carbon dioxide could play a beneficial role of a selective oxidant in the improvement of the catalytic behavior through the oxidative pathway.

• 대한금속재료학회지
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• 제46권9호
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• pp.604-608
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• 2008

The layered compounds vanadium disulfide($VS_2$) and vanadium dioxide($VO_2$) intercalated with Li are investigated for using the Discrete Variational $(DV)-X{\alpha}$ molecular orbital method. The chemical bonding properties of the atoms were examined by bond overlap population of electronic states. The plot of density of states supports the covalent bonding properties by showing the overlap between the atoms. There is a strong tendency of covalent bonding between V-S and V-O. The intensity of covalent bonding of $VS_2$ is stronger than $VO_2$. The net charge of $LiVO_2$ is higher than that of $LiVS_2$. This results of the calculation of $VO_2$ and $VS_2$ indicate that $(DV)-X{\alpha}$ method can be widely applied in the new practical materials.

• Journal of Electrical Engineering and Technology
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• 제7권5호
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• pp.784-788
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• 2012

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

• 청정기술
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• 제21권4호
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• pp.235-240
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• 2015

본 연구에서는 열변색 물성을 향상시키기 위한 방안의 하나로 0~0.5 at % 범위의 티타늄을 도핑한 이산화 바나듐(Ti-VO₂)을 제조하였다. Ti-VO₂ 입자들은 바나딜설페이트, 중탄산암모늄, 사염화 티타늄 등을 사용하여 바나듐 화합물 전구체를 제조한 후 열분해법을 이용하여 제조하였다. 제조된 시료들의 결정 구조, 형상, 화학적 구조 및 열변색 특성은 X-선 회절분석기, 전계방사 주사전자현미경, X-선 광전자 분광기, 시차주사열량분석기, 자외선-가시광선-근적외선 분광기 등을 이용하여 분석하였다. 제조된 Ti-VO₂ 입자들은 단사 결정계를 지니고 있고, 또한 티타늄이 이산화 바나듐 결정내에 잘 도핑되어 있음을 확인할 수 있었다. 티타늄 도핑량이 증가함에 따라 최종 Ti-VO₂ 입자들의 크기가 작아지고 상전이 온도가 낮아졌으며, 또한 NIR switching efficiency는 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.424.1-424.1
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• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• 조명전기설비학회논문지
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• 제29권11호
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• pp.59-65
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• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.