• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.144-151
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• 2022

In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.565-568
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• 2014

This paper presents a 0.2V DC/DC boost converter with regulated output for thermoelectric energy harvesting. To use low voltages from a thermoelectric device, a start-up circuit consisting of native NMOS transistors and resistors boosts an internal VDD, and the boosted VDD is used to operate the internal control block. When the VDD reaches a predefined value, a detector circuit makes the start-up block turn off to minimize current consumption. The final boosted VSTO is achieved by alternately operating the sub-boost converter for VDD and the main boost converter for VSTO according to the comparator outputs. When the VSTO reaches 2.4V, a buck converter starts to operate to generate a stabilized output VOUT. Simulation results shows that the designed converter generates a regulated 1.8V output from an input voltage of 0.2V, and its maximum power efficiency is 60%. The chip designed using a $0.35{\mu}m$ CMOS process occupies $1.1mm{\times}1.0mm$ including pads.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.55-60
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• 2010

For battery-powered device applications, which grow rapidly in the electronic market today, low-power becomes one of the most important design issues of CMOS VLSI circuits. A multi-VDD system, which uses more than one power-supply voltage in the same system, is an effective way to reduce the power consumption without degrading operating speed. However, in the multi-VDD system, level converters should be inserted to prevent a large static current flow for the low-to-high conversion. The insertion of the level converters induces the overheads of power consumption, delay, and area. In this paper, we propose a new level converter which can provide the level up/down conversions for the various input and output voltages. Since the proposed level converter uses only one power-supply voltage, it has an advantage of reducing the complexity in physical design. In addition, the proposed level converter provides lower power and higher speed, compared to existing level converters.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.1-6
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• 2008

The holding voltage of the high-voltage MOSFETs in snapback condition is much smaller than the power supply voltage. Such characteristics may cause the latcup-like problems in the Smart Power ICs if these devices are directly used in the ESD (Electrostatic Discharge) power clamp. In this work, a latchup-free design based on the Drain-Extended PMOS (DEPMOS) adopting gate VDD structure is proposed. The operation region of the proposed gate-VDD DEPMOS ESD power clamp is below the onset of the snapback to avoid the danger of latch-up. From the measurement on the devices fabricated using a $0.35\;{\mu}m$ BCD (Bipolar-CMOS-DMOS) Process (60V), it was observed that the proposed ESD power clamp can provide 500% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven LDMOS (lateral double-diffused MOS).

• Nutrition Research and Practice
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• v.16 no.1
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• pp.120-131
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• 2022

BACKGROUND/OBJECTIVES: Low early pregnancy serum 25-hydroxy vitamin D (25[OH]D) levels can increase gestational diabetes mellitus (GDM) risk, although inconsistent findings related to that association have been reported. This study examined the association of serum vitamin D with GDM and the possible influencers on this association. SUBJECTS/METHODS: This study included 259 pregnant women within the Seremban Cohort Study (SECOST). Blood samples at < 14 weeks of gestation were drawn to determine serum 25(OH)D levels. GDM diagnosis was made at 24 to 32 weeks of gestation using a standard procedure. Association between serum vitamin D and GDM was tested using binary logistic regression. RESULTS: Nearly all women (90%) had mild (68.3%) or severe (32.2%) vitamin D deficiency (VDD). Non-GDM women with mild VDD had a significantly higher mean vitamin D intake than GDM women with mild VDD (t = 2.04, p < 0.05). Women with higher early pregnancy serum vitamin D levels had a greater risk of GDM. However, this significant association was only identified among those with a family history of type 2 diabetes mellitus (T2DM) and in women with a body mass index indicating overweight or obese status. CONCLUSIONS: The high prevalence of VDD in this sample of pregnant women underscores the need for effective preventive public health strategies. Further investigation of this unexpected association between serum vitamin D level and GDM risk in predominantly VDD pregnant women and the potential effects of adiposity and family history of T2DM on that association is warranted.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1077-1080
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• 1998

In this paper, a simple low-power current-mode CMOS wotage reference circuit is proposed. The reference circuit of enhancement-mode MOS transistors and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a threshold voltage. The designed circuit has been simulated using a $0.65\mu\textrm{m}$ n-well CMOS process parameters. The simulation results show that the reference circuit has a temperature coefficient less than $7.8ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.079%/V for a temperature range from $-30^{\circ}C$ to $130^{\circ}C$ and a VDD range from 4.0V to 12V. The power consumption is 105㎼ for VDD=5V and $T=30^{\circ}C.$ The proposed reference circuit can be designed to generate a wide range of reference voltages owing to its current-mode operation.

• Proceedings of the IEEK Conference
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• summer
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• pp.74-76
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• 2004

A Half-VDD Voltage(VHDD) Generator using PMOS pull-up transistor and NMOS pull-down transistor was newly proposed for low-voltage DRAMs. The driving current was increased and the power-on settling time was reduced in the new circuit. The newly proposed VHDD generator worked successfully at VDD at 1.5V and fabricated using 0.18um CMOS twin-well technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.12
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• pp.2731-2740
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• 2012

ASIC(application specific integrated circuit) process is a set of various technologies for fabricating a chip. Generally there have been many researches for RTL design, synthesis, floor plan & routing, low power scheme, clock tree synthesis, and testability which are widely researched in recent. In this paper we propose a new methodology of power strap routing in basis of design experience and experiment. First the power strap for vertical VDD and VSS and horizontal VDD and VSS is routed, and then after the problems which are generated in this process are analyzed, we propose a new process for resolving them. For this, the strap guide is inserted to protect the unnecessary strap routing and dumped for next steps. Next the unnecessary power straps which are generated the first inserting process are removed, and the pre-routing is performed for the macro cells. Finally the resultant power straps are routed using the dumped routing guide. Through the proposed process we identified the efficient and stable route of the power straps.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.180-184
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• 2013

In this paper, a low power antenna switch controller IC is designed using a silicon-on-insulator (SOI) CMOS technology. To improve power handling capability and harmonic distortion performance of the antenna switch, the proposed antenna switch controller provides 3-state logic level such as +VDD, GND, and -VDD for the gate and body of switch of FETs according to decoder signal. By employing input-coupled current ring oscillator and hardware efficient level shifter, the proposed controller greatly reduces power consumption and hardware complexity. It consumes 135 ${\mu}A$ at a 2.5 V supply voltage in active mode, and occupies $1.3mm{\times}0.5mm$ in area. In addition, it shows fast start-up time of 10 ${\mu}s$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.4 s.310
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• pp.53-59
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• 2006

This paper describes the new design technique of full wave rectifier (FWR) for precise measurement instrument and the chip implementation of this FWR circuit with measurement results. Conventional circuits have some problems of complex design and limited output range( $VDD/2{\sim}VLIIV1IT+$). Proposed FWR circuit was simply designed with two 2x1 MUXs, one high speed comparator, and one differential difference amplifier(DDA). One rail-to-rail differential difference amplifier(DDA) performs the DC level shifting to VSS and 2X amplification simultaneously, and enables the full range ($Vss{\sim}VDD$) operation. The proposed FWR circuits shows more than 50% reduction of chip area and power consumption compared to conventional one. Proposed circuit was implemented with 0.35um 1-poly 2-metal CMOS process. Core size is $150um{\times}450um$ and power dissipation is 840uW with 3.3V single supply.