• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.10a
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• pp.101-103
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• 2022

Elliptic curve cryptography (ECC) is widely used in hardware implementations of public-key crypto-systems for IoT devices and V2X communication because it is suitable for efficient hardware implementation and has high security strength. However, ECC-based public-key cryptography is known to have security vulnerabilities against side-channel attacks, so it is necessary to apply countermeasures against security attacks in designing ECC processor. This paper describes a survey on the side-channel attacks and countermeasures applicable to ECC processor design.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.696-702
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• 2002

The BST $({Bal-xSrxTiO_3})$ (50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively. The BST thin film annealed at $800^{\circ}C$ for 2 min has pure perovskite structure and good surface roughness of 16.1$\AA$. As the film thickness increases from 80 nm to 240 nm, the dielectric constant at 10 KHz increases from 199 to 265 and the leakage current density at 250 ㎸/cm decreases from $0.779 {\mu}A/{cm^2} to 0.184 {\mu}A/{cm^2}$. In the case of 240 nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5 fC/${{\mu}m^2} and 0.182 {\mu}A/{cm^2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1032-1037
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• 2003

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.409-415
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• 2011

The method to improve the detection sensitivity of Hand-held XRF (X-Ray Fluorescence) device currently being developed is discussed. To minimize the loss of the intensity due to atmospheric gas molecules, the vacuum module, which can be filled with atmospheric or He gas, between the sample and the detector was installed. And the change of the detection sensitivity was measured in a vacuum and in the He gas-filled state. As a result, the following three important results were obtained; Firstly, XRF intensity was increased 2~4 times in the low energy range (3~4 keV). It is a very important result because the enhancement of the detection sensitivity means shortening of the detection time in Hand-held XRF device. Secondly, the possibility of detection of the elements less than 3 keV in emission energy was confirmed. Thirdly, the absorption by atmospheric gas molecules can be minimized without vacuum- sealed vessel in Hand-held XRF device, if the vacuum module filled with He gas is used. We concluded that all of three results are very meaningful in the development of a Hand-held XRF device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.458-458
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• 2013

We investigated a study on the thermal degradation of boron doped zinc-oxide (BZO) layer which used as a transparent conducting layer on the Cu (In1-xGax) Se2 (CIGS) based thin film solar cells. Devices were annealed under the temperature of $100^{\circ}C$ or 100 hours and then Hall measurement was carried out to characterize the parameters of mobility (${\mu}Hall$), resistivity (${\rho}$), conductivity (${\sigma}$) and sheet resistance (Rsh). The initial values of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh were $29.3cm^2$/$V{\cdot}s$, $2.1{\times}10^{-3}{\Omega}{\cdot}cm$, $476.4{\Omega}^{-1}{\cdot}cm^{-1}$ and $19.1{\Omega}$/${\Box}$ respectively. After the annealing process, the values were $4.5cm^2$/$V{\cdot}s$, $12.8{\times}10^{-3}{\Omega}{\cdot}cm$, $77.9{\Omega}^{-1}{\cdot}cm^{-1}$ and $116.6{\Omega}$/${\Box}$ respectively. We observed that ${\mu}Hall$ and ${\sigma}$ were decreased, and ${\rho}$ and Rsh were increased. In this study, BZO layer plays an important role of conducting path for electrons generated by incident light onthe CIGS absorption layer. Therefore, the degradation of BZO layer characterized by the parameters of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh, affect to the cell efficiency.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Journal of Chest Surgery
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• v.18 no.2
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• pp.299-304
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• 1985

The partial A-V canal defect consist of ostium primum type atrial septal defect with a cleft mitral anterior leaflet. The clinical findings depend upon the site and size of the left-to-right shunt, the degree of A-V valvular regurgitation, and the degree of resultant pulmonary artery hypertension. We experienced 3 cases of similar condition. The data were as follow: 1. Chest P-A showed increased pulmonary vascularity and moderate cardiomegaly with left atrial enlargement. 2. E.K.G. showed left axis deviation, left atrial enlargement, and left ventricular hypertrophy. 3. Right heart catheterization showed significant 02 step up of SVC-RA and left-to-right shunt. 4. Left ventriculogram showed mitral regurgitation and filling of both atrium. Operative findings were as follow: 1. Primum type atrial septal defect [2x2 cm]. 2. Cleft in the anterior leaflet of the mitral vave. 3. No evidence of ventricular septal defect and tricuspid anomaly. Through a right atriotomy with moderate hypothermia, the mitral cleft was approximated with interrupted sutures. The interatrial communication was closed by a patch of Dacron/pericardium. The patch was attached to junction of the mitral and tricuspid valves along the crest of the ventricular septum using interrupted sutures and the other site using continuous sutures. Postoperative course was uneventful and discharged in good general condition except postoperative bleeding in case 3.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.186-194
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• 1996

The SliM (sliding memory plane) array processor has been proposed to alleviate disadvantages of existing mesh-connected SIMD(single instruction stream- multiple data streams) array processors, such as the inter-PE(processing element) communication overhead, the data I/O overhead and complicated interconnections. This paper presents the deisgn and implementation of SliM image processor ASIC (application specific integrated circuit) chip consisting of mesh connected 5 X 5 PE. The PE architecture implemented here is quite different from the originally proposed PE. We have performed the front-end design, such as VHDL (VHSIC hardware description language)modeling, logic synthesis and simulation, and have doen the back-end design procedure. The SliM ASIC chip used the VTI 0.8$\mu$m standard cell library (v8r4.4) has 55,255 gates and twenty-five 128 X 9 bit SRAM modules. The chip has the 326.71 X 313.24mil$^{2}$ die size and is packed using the 144 pin MQFP. The chip operates perfectly at 25 MHz and gives 625 MIPS. For performance evaluation, we developed parallel algorithms and the performance results showed improvement compared with existing image processors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.142-145
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• 2019

Normally, a corner cube retroreflector (CCRR) sheet is used as a retroreflective mirror array (RRMA) in a volumetric display. Each CCRR unit reflects light in the retroreflective direction, which is parallel to the incident light, and it makes a blurred image, as it shifts the position of light within its dimensions. Adopting a "curved planar wall" and "parabolic focusing" (x-axis), a hybrid-t(transverse direction)-RRMA is proposed, to improve the image quality and brightness. The improvement of image contrast is achieved by tuning a "linear v-shaped groove" structure to a "parabolic v-shaped groove". Also, the system has been simplified and the brightness enhanced 4 times by removing the half mirror.