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Effects of Boron Doping on the Structural and Optical Properties of CdS Thin Films  

Lee, Jae-Hyeong (Dept.of Electronics Information Engineering, Kunsan National University)
Jung, Hak-Kee (Dept.of Electronics Information Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.5, 2003 , pp. 1032-1037 More about this Journal
Abstract
Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.
Keywords
cadmium sulphide; boron doping; photoluminescence; Raman scattering; solar cell;
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