• 한국자기학회지
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• 제20권3호
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• pp.83-88
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• 2010

Pd과 3d(V, Ti) 및 4d(Mo, Ru, Rh) 전이금속이 c($2{\times}2$) 합금을 이루고 있는 단층의 자성을 제일원리적 FLAPW 에너지띠 방법을 이용하여 연구하였다. 이들 합금과 비교를 위하여 Pd과 V, Ti 및 Mo, Ru, Rh 원자로만 이루어진 단층의 전자구조도 계산하였다. 3d 원소인 V와 Ti 만으로 이루어진 단층의 경우, V은 반강자성, Ti의 경우는 강자성상태가 안정적이었으나, 이들이 Pd와 c($2{\times}2$) 합금을 이루었을 경우 모두 자기모멘트가 반대 방향을 가지는 준강자성 상태가 안정적이었다. 반면에 4d 원자인 Mo, Ru, Rh이 Pd와 c($2{\times}2$) 합금을 이룰 경우에는 자기모멘트들이 같은 방향을 가졌다. 자기모멘트 값을 보면, Ru이나 Rh의 경우 순수단층이나 Pd과 합금을 이룬 경우 그리 큰 차이를 보이지 않았으나, Mo의 경우 $0.02\;{\mu}_B$에서 $2.98\;{\mu}_B$로 급격히 증가하였다. 합금을 이루는 두 원소사이의 전하이동은 전기음성도에 따르게 됨을 알았다.

• Journal of Ginseng Research
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• 제21권2호
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• pp.109-114
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• 1997

The effect of total saponin fraction of Ginseng injected intrathecally (i.1.) or in- tracerebroventricularly (i.c.v.) on the antinociception induced by D-$Pen^{2,5}$- enkephalin (DPDPE) ad ministered i.c.v. was studied in ICR mice in the present study. The antinociception was assessed by the tail-flick test. Total saponin fraction at doses 0.1 to 1.0 $\mu\textrm{g}$, which administered i.t. Alone did not affect the latencies of tail-flick threshold, attenuated dose-dependently the inhibition of the tail-flick response induced by i.c.v. administered DPDPE (10 $\mu\textrm{g}$). However, total saponin fraction at doses 1 to 20 $\mu\textrm{g}$, which administered i.c.v. Alone did not affect the latencies of the tail-flick response, did not affect i.c.v. administered DPDPE (10 $\mu\textrm{g}$)-induced antinociception. The duration of antagonistic action of total saponin fraction against DPDPE-induced antlnociception was lasted at least for 6 hrs. Various doses of ginsenosides Rd, but not $\Rb_2$, Rc, Rg1, and $\Rb_1$ and Re, injected i.t. Dose-dependently attenuated antinociception induced by DPDPE administered i.c.v. Our results indicate that total saponin fraction injected spinally appears to have antagonistic action against the antinociception induced by supraspinally applied DPDPE. Ginsenoside Rd appears to be responsible for blocking j.c.v. administered DPDPE-induced antinociception. On the other hand, total ginseng fraction, at supraspinal sites, may not have an antagonistic action against the antinociception induced by DPDPE.

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.180-181
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• 2003

Czochralski 방법으로 KMg $F_3$：S $m^{2+}$ 결정을 성장시키고 고 분해 레이저 분광법을 이용하여, 형광특성을 조사하였다. S $m^{2+}$ 이온이 KMg $F_3$ 결정에서 $C_{4v}$, $C_{2v}$, $C_{3v}$ 및 $O_{h}$ 형광 방출 사이트를 가진다는 것을 확인하였고, 아울러 각 사이트의 에너지 준위를 구하였다. 구하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Annals of Clinical Neurophysiology
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• 제4권1호
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• pp.85-88
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• 2002

Ramsay-Hunt syndrome is a viral disease associated with peripheral facial nerve paralysis accompany by erythematous vesicular rashs on the ear(zoster oticus) or in the mouth. Based on clinical presentations that indicated involvement of more than one ganglion, the gasserian, geniculate, petrous, accessory, jugular and second and third dorsal root ganglia comprised a chain in which inflammation of a single ganglion could extend to nearby ganglia. A 71-year-old man presented with left. peripheral facial palsy with otalgia, vesicular eruption in $V_2$, $V_3$, C2, C3 dermatome, tinnitus, and hearing loss.

• 한국재료학회지
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• 제12권5호
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• pp.414-422
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• 2002

Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.

• 한국재료학회지
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• 제11권10호
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• 접착 및 계면
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• 제22권3호
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• pp.91-97
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• 2021

본 연구는 Parylene C 유전체 표면에 유기 자기조립단분자막(self-assembled monolayer, SAM) 중간층을 도입함으로써 표면특성을 제어하고 최종적으로 유기전계효과 트랜지스터(organic field-effect transistors, OFETs)의 전기적 안정성을 향상시킨 결과를 제시하였다. 유기 중간층을 적용함으로써, Parylene C 게이트 유전체의 표면 에너지를 제어하였으며, OFET의 가장 중요한 성능변수인 전계효과 이동도(field-effect transistor, μ_FET)와 문턱 전압 (threshold voltage, V_th)의 성능향상과 구동 안정성을 증대시켰다. 단순히 Parylene C 유전체를 적용한 Bare OFET에서 μ_FET 값은 0.12 cm²V^-1s^-1가 측정되었으나, hexamethyldisilazane (HMDS)과 octadecyltrichlorosilane (ODTS)를 중간층으로 적용된 소자에서는 각각 0.32과 0.34 cm²V^-1s^-1로 μ_FET가 증가하였다. 또한 1000번의 transfer 특성의 반복측정을 통해 ODTS 처리한 OFET의 μ_FET와 V_th의 변화가 가장 작게 나타남을 확인하였다. 이 연구를 통해 유기 SAM 중간층, 특히 ODTS는 효과적으로 Parylene C 표면을 알킬 사슬로 덮어 극성도를 낮춤과 함께 전하 트래핑을 감소시켜 소자의 전기적 구동 안정성을 증가시킬 수 있음을 확인하였다.

• 대한본초학회지
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• 제25권3호
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• pp.111-116
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• 2010

Objectives : This experimental study was performed to investigate the antibacterial effect of Caesalpinia sappan and Coptis chinensis extract against B. cereus and V. parahaemolyticus. Methods : Methanol extracts of C. sappan and C. chinensis was tested against B. cereus and V. parahaemolyticus by paper disc method. Results : The growth of B. cereus and V. parahaemolyticus was inhibited by C. sappan and C. chinensis extract among 6 kinds of medicinal plant extracts. The extract of C. sappan and C. chinensis extract inhibited the growth of V. parahaemolyticus and B. cereus, respectively. The growth of B. cereus and V. parahaemolyticus had a tendency to increase depend on the concentration of the extract. EtOEt and EtOAc fractions and EtOEt and BuOH fractions of the C. sappan extract had a high antibacterial activity against B. cereus and V. parahaemolyticus, respectively. And, BuOH and $H_2O$ fractions of the C. chinensis extract showed antibacterial activity against B. cereus highly. Conclusions : C. sappan and C. chinensis extract efficiently inhibited the growth of B. cereus and V. parahaemolyticus.