• Journal of applied mathematics & informatics
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• 제31권5_6호
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• pp.595-608
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• 2013

Let G = (V, E) be a simple connected graph. The sets of vertices and edges of G are denoted by V = V (G) and E = E(G), respectively. In such a simple molecular graph, vertices represent atoms and edges represent bonds. The distance between the vertices $u$ and $v$ in V (G) of graph G is the number of edges in a shortest path connecting them, we denote by $d(u,v)$. In graph theory, we have many invariant polynomials for a graph G. In this paper, we focus on the Schultz polynomial, Modified Schultz polynomial, Hosoya polynomial and their topological indices of a molecular graph circumcoronene series of benzenoid $H_k$ and specially third member from this family. $H_3$ is a basic member from the circumcoronene series of benzenoid and its conclusions are base calculations for the Schultz polynomial and Hosoya polynomial of the circumcoronene series of benzenoid $H_k$ ($k{\geq}3$).

• 혜화의학회지
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• 제9권2호
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• pp.269-276
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• 2001

In the literatual study about incurable case of C.V.A, the result were as follow: 1. The expressions of incurable C.V.A are sa(死), bulchi(不治), bulgabokchi(不可復治), hyung(凶), samang(死亡), danbulgu(斷不救), etc. 2. The symptoms of incurable C.V.A are balgiktomal(髮直吐沫),oudusangchan(搖頭上竄),augugijo(魚口氣粗),mokjingjiksi,ansohusungyuegue(眼小喉聲如鋸)myunjukyejang(面赤加粧), hanchulyueju(汗出如珠), sooneuimosang(循衣摸床), sinhonbuloe(神昏不語) dumyunsujokjogabchunghuk(頭面手足靑黑), dongjiguntong(動止筋痛), tohyulhayul(吐血下血), daetodaesa(大吐大瀉), gugaeanhab(口開眼合), suchul(手撤), bihan, yunyoe(遺尿) etc. 3. The pulse of incurable C.V.A is classified with maekgeubidaesakja(脈急而大數者) and maekgindaegeunjil(脈緊大急疾). 4. The symptoms of incurable C.V.A are classified into five viscerals and classify the differences between special symtom of each visceral and proenosis.

• 대한전자공학회논문지TC
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• 제44권2호
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• pp.6-14
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• 2007

본 논문에서는 V-BLAST (Vertical-Bell-lab Layered Space Time) 복호 알고리즘의 ordering과 slicing 과정에 MAP(Maximum A Posteriori) 디코더의 외부 정보 (extrinsic information)를 이용한 최적의 터보 부호화된 (Optimal Turbo Coded) V-BLAST 적응 변조 시스템을 제안 후 성능을 관찰한다. 외부정보는 ordering과 slicing에 사전 확률 (a priori probability) 로서 사용되며 시스템 복호 과정은 주 반복 (Main Iteration) 및 부 반복 (Sub Iteration) 과정으로 이루어진다. 채널 상태에 따라 변조 방식을 달리하는 적응 변조 시스템을 기존의 터보 부호화 (Turbo Coding) 된 V-BLAST 시스템과 최적의 터보 부호화된 V-BLAST 시스템에 각각 적용하고 전송률 (throughput) 을 비교하여 제안된 시스템을 적용할 경우 어느 정도의 성능 개선이 있는가를 살펴본다. 또한, 제안된 시스템에 선택적 전송 다이버시티 (STD : Selection Transmit Diversity) 기법을 적용한 후 성능의 향상을 관찰한다. 모의 실험결과, 적응 변조 시스템에서 최적의 터보 부호화된 V-BLAST 기법을 적용한 경우가 기존의 터보 부호화된 V-BLAST 기법을 적용한 경우에 비하여 11 dB의 SNR (Signal to Noise Ratio) 영역에서 최대 약 350 kbps의 전송률 향상이 나타났다. 특히, 제안된 시스템에 선택적 전송 다이버시티가 적용된 경우에는 송수신 안테나가 각각 2개인 기존의 터보 부호화된 V-BLAST 기법을 적용한 시스템의 경우에 비하여 같은 SNR 영역에서 최대 약 1.77 Mbps의 전송률이 개선됨을 보였다.

• Journal of Microbiology and Biotechnology
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• 제17권12호
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• pp.1944-1948
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• 2007

Silkworm hemolymph (SH), prepared from fifth-instar larvae of Bombyx mori and heat-treated at $60^{\circ}C$ for 30 min, was used to improve cell viability and the production of human cytotoxic T-lymphocyte antigen 4-immunoglobulin (hCTLA4Ig) in transgenic Oryza sativa L. cell suspension cultures. Even though SH could not elevate cell viability at the concentrations up to 3% (v/v), addition of 0.3% (v/v) SH to a culture medium enhanced the production of hCTLA4Ig by 36.8% over an SH-free medium. Moreover, the production period of hCTLA4Ig could be shortened in a 0.3% (v/v) SH-added medium compared with that in an SH-free culture. As a result, addition of 0.3% (v/v) SH improved the productivity of hCTLA4Ig significantly in transgenic rice cell cultures.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1385-1387
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• 1994

For the development of the 25.8kV outdoor GCB (Gas - Circuit - Breaker), which have a surge surpression performance in closing & opening of circuit and a high reliability performance, we have developed the 25.8kV gas bushing first of all in KOREA. After manufacturing of 25.8kV/2000A gas bushing, we carried out the dimension & visual test and electrical & mechanical test and we have got the favorable test-results. And it was put together real outdoor GCB, and then we carried out type test at KERI and have confirmed the performance of this bushing.

• 공업화학
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• 제20권3호
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• pp.273-278
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• 2009

Heck coupling reaction을 이용해서 poly[2-(2,6-dimethylpyran-4-ylidene)malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PM-PPV), poly[2-{2,6-Bis-[2-(5-bromothiophen-2-yl)-vinyl]-pyran-4-ylidene}-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMT-PPV), poly[2-[2,6-Bis-(2-{4-[(4-bromophenyl)-phenylamino]-phenyl}-vinyl)-pyran-4-ylidene]-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMTPA-PPV)를 합성하였다. PM-PPV, PMT-PPV, PMTPA-PPV의 band gap은 각각 2.18 eV, 1.90 eV, 2.07 eV로 나타났다. LUMO 에너지 준위는 각각 3.65 eV, 3.54 eV, 3.62 eV로 나타났고 HOMO 에너지 준위는 각각 5.83 eV, 5.61 eV, 5.52 eV이고 소자를 제작하여 측정한 결과는 AM 1.5 G [1 sun condition ($100mA/cm^2$)]에서의 효율은 0.028%, 0.031%, 0.11%이고 open-circuit voltage (Voc)는 0.59 V~0.69 V로 나타났다.

• 전자공학회논문지A
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• 제28A권10호
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• pp.821-829
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• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• 대한수학회지
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• 제48권3호
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• pp.599-626
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• 2011

Let T = (V,A) be a tournament. With every subset X of V is associated the subtournament T[X] = (X, A ${\cap}$ (X${\times}$X)) of T, induced by X. The dual of T, denoted by $T^*$, is the tournament obtained from T by reversing all its arcs. Given a tournament T' = (V,A') and a non-negative integer ${\kappa}$, T and T' are {$-{\kappa}$}-hemimorphic provided that for all X ${\subset}$ V, with ${\mid}X{\mid}$ = ${\kappa}$, T[V-X] and T'[V-X] or $T^*$[V-X] and T'[V-X] are isomorphic. The tournaments T and T' are said to be hereditarily hemimorphic if for all subset X of V, the subtournaments T[X] and T'[X] are hemimorphic. The purpose of this paper is to establish the hereditary hemimorphy of the {$-{\kappa}$}-hemimorphic tournaments on at least k + 7 vertices, for every ${\kappa}{\geq}5$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• 조명전기설비학회논문지
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• 제21권10호
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• pp.66-72
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• 2007

이 논문은 직류+60[Hz] 교류 중첩전압에서 신품과 노후된 18[kV] 산화아연 서지피뢰기의 누설전류와 전력손실에 대하여 기술하였다. 최대 50[kV]의 직류+60[Hz] 교류를 발생시킬 수 있는 중첩전압발생장치가 설계되고 제작되었다. 피뢰기의 I-V 특성곡선은 전압중첩률 K의 함수로 측정된다. DC와 AC 전압이 중첩된 I-V, R-V 특성곡선은 순수한 직류와 교류곡선 사이에 있고 저전류 영역에서 교차현상이 나타난다. 그 결과 중첩 전압에서 직류 성분의 증가는 ZnO 피뢰기의 전체 누설전류의 저항성분의 증가를 유발한다. 또한 같은 인가전압에서 피뢰기를 통해 흐르는 누설전류는 상용전원에서 장시간 스트레스 받은 피뢰기가 신품 피뢰기에 비해서 높게 나타났다.