• Journal of applied mathematics & informatics
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• v.31 no.5_6
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• pp.595-608
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• 2013

Let G = (V, E) be a simple connected graph. The sets of vertices and edges of G are denoted by V = V (G) and E = E(G), respectively. In such a simple molecular graph, vertices represent atoms and edges represent bonds. The distance between the vertices $u$ and $v$ in V (G) of graph G is the number of edges in a shortest path connecting them, we denote by $d(u,v)$. In graph theory, we have many invariant polynomials for a graph G. In this paper, we focus on the Schultz polynomial, Modified Schultz polynomial, Hosoya polynomial and their topological indices of a molecular graph circumcoronene series of benzenoid $H_k$ and specially third member from this family. $H_3$ is a basic member from the circumcoronene series of benzenoid and its conclusions are base calculations for the Schultz polynomial and Hosoya polynomial of the circumcoronene series of benzenoid $H_k$ ($k{\geq}3$).

• Journal of Haehwa Medicine
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• v.9 no.2
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• pp.269-276
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• 2001

In the literatual study about incurable case of C.V.A, the result were as follow: 1. The expressions of incurable C.V.A are sa(死), bulchi(不治), bulgabokchi(不可復治), hyung(凶), samang(死亡), danbulgu(斷不救), etc. 2. The symptoms of incurable C.V.A are balgiktomal(髮直吐沫),oudusangchan(搖頭上竄),augugijo(魚口氣粗),mokjingjiksi,ansohusungyuegue(眼小喉聲如鋸)myunjukyejang(面赤加粧), hanchulyueju(汗出如珠), sooneuimosang(循衣摸床), sinhonbuloe(神昏不語) dumyunsujokjogabchunghuk(頭面手足靑黑), dongjiguntong(動止筋痛), tohyulhayul(吐血下血), daetodaesa(大吐大瀉), gugaeanhab(口開眼合), suchul(手撤), bihan, yunyoe(遺尿) etc. 3. The pulse of incurable C.V.A is classified with maekgeubidaesakja(脈急而大數者) and maekgindaegeunjil(脈緊大急疾). 4. The symptoms of incurable C.V.A are classified into five viscerals and classify the differences between special symtom of each visceral and proenosis.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.2
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• pp.6-14
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• 2007

In this paper, we propose and observe the Adaptive Modulation system with optimal Turbo Coded V-BLAST (Vertical-Bell-lab Layered Space-Time) technique that is applied the extrinsic information from MAP (Maximum A Posteriori) Decoder in decoding Algorithm of V-BLAST: ordering and slicing. The extrinsic information is used by a priori probability and the system decoding process is composed of the Main Iteration and the Sub Iteration. And comparing the proposed system with the Adaptive Modulation system using conventional Turbo Coded V-BLAST technique that is simply combined V-BLAST with Turbo Coding scheme, we observe how much throughput performance has been improved. In addition, we observe the proposed system using STD (Selection Transmit Diversity) scheme. As a result of simulation, Comparing with the conventional Turbo Coded V-BLAST technique with the Adaptive Modulation systems, the optimal Turbo Coded V-BLAST technique with the Adaptive Modulation systems has better throughput gain that is about 350 Kbps in 11 dB SNR range. Especially, comparing with the conventional Turbo Coded V-BLAST technique using 2 transmit and 2 receive antennas, the proposed system with STD (Selection Transmit Diversity) scheme show that the improvement of maximum throughput is about 1.77 Mbps in the same SNR range.

• Journal of Microbiology and Biotechnology
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• v.17 no.12
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• pp.1944-1948
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• 2007

Silkworm hemolymph (SH), prepared from fifth-instar larvae of Bombyx mori and heat-treated at $60^{\circ}C$ for 30 min, was used to improve cell viability and the production of human cytotoxic T-lymphocyte antigen 4-immunoglobulin (hCTLA4Ig) in transgenic Oryza sativa L. cell suspension cultures. Even though SH could not elevate cell viability at the concentrations up to 3% (v/v), addition of 0.3% (v/v) SH to a culture medium enhanced the production of hCTLA4Ig by 36.8% over an SH-free medium. Moreover, the production period of hCTLA4Ig could be shortened in a 0.3% (v/v) SH-added medium compared with that in an SH-free culture. As a result, addition of 0.3% (v/v) SH improved the productivity of hCTLA4Ig significantly in transgenic rice cell cultures.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1385-1387
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• 1994

For the development of the 25.8kV outdoor GCB (Gas - Circuit - Breaker), which have a surge surpression performance in closing & opening of circuit and a high reliability performance, we have developed the 25.8kV gas bushing first of all in KOREA. After manufacturing of 25.8kV/2000A gas bushing, we carried out the dimension & visual test and electrical & mechanical test and we have got the favorable test-results. And it was put together real outdoor GCB, and then we carried out type test at KERI and have confirmed the performance of this bushing.

• Applied Chemistry for Engineering
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• v.20 no.3
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• pp.273-278
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• 2009

A series of poly[2-(2,6-dimethylpyran-4-ylidene)malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PM-PPV), poly[2-{2,6-Bis-[2-(5-bromothiophen-2-yl)-vinyl]-pyran-4-ylidene}-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMT-PPV) and poly[2-[2,6-Bis-(2-{4-[(4-bromophenyl)-phenylamino]-phenyl}-vinyl)-pyran-4-ylidene]-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMTPA-PPV) were synthesized by the Heck coupling reaction. The band gap of PM-PPV, PMT-PPV and PMTPA-PPV were 2.18 eV, 1.90 eV and 2.07 eV, respectively. The LUMO energy levels of PM-PPV, PMT-PPV and PMTPA-PPV were 3.65 eV, 3.54 eV and 3.62 eV, respectively and the HOMO energy levels of those were 5.83 eV, 5.61 eV and 5.52 eV, respectively. The photovoltaic devices based on the polymers was fabricated. The efficiency of the solar cells based on PM-PPV, PMT-PPV and PMTPA-PPV were 0.028%, 0.031% and 0.11%, respectively and the open circuit voltage (Voc) was 0.59 V~0.69 V under AM 1.5 G and 1 sun condition ($100mA/cm^2$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.821-829
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• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• Journal of the Korean Mathematical Society
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• v.48 no.3
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• pp.599-626
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• 2011

Let T = (V,A) be a tournament. With every subset X of V is associated the subtournament T[X] = (X, A ${\cap}$ (X${\times}$X)) of T, induced by X. The dual of T, denoted by $T^*$, is the tournament obtained from T by reversing all its arcs. Given a tournament T' = (V,A') and a non-negative integer ${\kappa}$, T and T' are {$-{\kappa}$}-hemimorphic provided that for all X ${\subset}$ V, with ${\mid}X{\mid}$ = ${\kappa}$, T[V-X] and T'[V-X] or $T^*$[V-X] and T'[V-X] are isomorphic. The tournaments T and T' are said to be hereditarily hemimorphic if for all subset X of V, the subtournaments T[X] and T'[X] are hemimorphic. The purpose of this paper is to establish the hereditary hemimorphy of the {$-{\kappa}$}-hemimorphic tournaments on at least k + 7 vertices, for every ${\kappa}{\geq}5$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.66-72
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• 2007

This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.