• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.356-362
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• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• Journal of Plant Biotechnology
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• v.40 no.4
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• pp.192-197
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• 2013

This study examined the phenotypic and molecular characteristics of the $2^{nd}$ clone ($T_0V_2$) plants of LeLs-antisense gene-transgenic chrysanthemum line (LeLs80) that exhibited non-branching, proving the relevance of these characteristics as a factor for use in environmental risk assessment. Results of the Southern blot analysis showed that three copies of the LeLs-antisense gene were introduced into the transgenic line, and northern analysis showed that the transcripted gene was normally expressed in the transgenic line. A flanking T-DNA sequencing method was used to determine that sequences of 184 and 464 bps flanked the LeLs-antisense gene in the transgenic line. These sequences, respectively, matched the 35S promoter for expression of the npt II gene and the NOS terminator for expression of the LeLs-antisense gene within the pCAMBIA 2300 vector.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1965-1967
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• 1999

We have investigated the electrical characteristics of the poly-Si TFT's with the novel gate insulator structure. The gate insulator makes the offset region to reduce leakage current, and the electrical characteristics are obtained by employing Virtual Wafer Fab. simulator. As increases the gate insulator thickness above the offset region of this structure from $0{\AA}$ to $2000{\AA}$, the OFF state current at $V_G$=10V decrease by two orders in magnitude while ON state current doesn't decrease significantly. ON/OFF current ratios for conventional device and the proposed device with $2000{\AA}$ gate insulator thickness are $1.68{\times}10^5$ and $1.07{\times}10^7$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.275-278
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• 2008

It has been issued that the necessity of Live line work for 765kV vertical double circuit six bundle conductors transmission line when the characteristics of transmission line, the composition of T/L and near the T/L circumstances etc. Others are considered. The Barehand method of UHV T/L is extremely dangerous work and especially it is directly related with lineman life so it is very dangerous. It should be performed several technology developments for live-line work on the UHV T/L, that should be considered such as the electrical influence on workers near the T/L, development of live-line facilities, guarantee of safety, the technical rules of live-line work, the safe method of live-line work and etc. In order to maintain the 765kV transmission lines safely by barehand work, first of all, we should know the analysis of electrical safety level test in live-line work at 765kV vertical double circuit six bundle conductors on the suspension string tower type.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• Journal of the Earthquake Engineering Society of Korea
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• v.10 no.2 s.48
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• pp.51-62
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• 2006

In the companion paper (I-Problem Statements of the Current Seismic Design Code), the current Korean seismic design code is required to be modified considering site characteristics in Korea for the reliable estimation of site amplification. In this paper, three site classification methods based on the mean shear wave velocity of the top 30m $V_{S30}$, fundamental site periods $(T_G)$ and bedrock depth were investigated and compared with each other to determine the best classification system. Not enough of a difference in the standard deviation of site coefficients $(F_a\;and\;F_v)$ to determine the best system, and neither is the difference between the average spectral accelerations and the design response spectrum of each system. However, the amplification range of RRS values based on $T_G$ were definitely concentrated on a narrow band than other classification system. It means that sites which have a similar behavior during earthquake will be classified as the same site category at the site classification system based on $T_G$. The regression curves between site coefficients and $T_G$ described the effect of soil non linearity well as the rock shaking intensity increases than the current method based on $V_{S30}$. Furthermore, it is unambiguous to determine sue category based on $T_G$ when the site investigation is performed to shallower depth less than 30m, whereas the current $V_{S30}$ is usually calculated fallaciously by extrapolating the $V_s$ of bedrock to 30m. From the results of this study, new site classification system based on $T_G$ was recommended for legions of shallow bedrock depth in Korea.