• Title/Summary/Keyword: V-t characteristics

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Characteristics of Products in the Reaction 40 MeV/nucleon $^{14}N+Ag$

  • Chung, Yong-Hee;Porile, N. T.
    • Bulletin of the Korean Chemical Society
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    • v.15 no.11
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    • pp.971-975
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    • 1994
  • Cross sections and recoil properties have been measured for the fragments produced in the interaction of silver with 40 MeV/nucleon $^{14}N$ ions using off-line ${\gamma}$-ray spectroscopy. The data were used to obtain the isobaric-yield distribution, the mass yield distribution, and the fractional momentum transfer. The values of forward-to-backward ratios were measured to be very large, indicating that substantial momentum transfer occurs at this energy regime. The results are compared with other studies of the interaction of silver with intermediate-energy heavy ions.

The Effect of Hardening Methods and Process Parameters on Surface Hardening of Ti-6Al-4V Alloy (Ti-6Al-4V 합금의 표면 경화 시 경화기구 및 공정변수가 표면 경화에 미치는 영향)

  • Seo, D.M.;Y., H. Jeong;Hwang, T.W.;Moon, Y.H.
    • Transactions of Materials Processing
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    • v.28 no.1
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    • pp.27-33
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    • 2019
  • The effect of hardening methods and process parameters on surface hardening of a Ti-6Al-4V Alloy has been investigated in this study. To characterize the effectiveness of the respective surface hardening methods, samples of a Ti-6Al-4V alloy were self-quenched, laser-nitrided, laser-carburized, laser-carbonitrided at the same laser irradiation conditions. This experimental procedure was followed by comparing the microstructural evolutions and mechanical properties of the respective samples after the laser surface hardenings. The hardening characteristics of the respective laser surface hardenings were well defined in this study, and the hardness was significantly influenced by the reaction compounds and laser energy density.

Activation energy standardization of White LED Phosphor (White LED 형광체의 활성화 에너지 정형화)

  • Jang, In-Hyeok;Kim, Su-Kyoung;Han, Ji-Hoon;Lee, Chang-Hoon;Lim, Houng-Woo
    • Journal of Applied Reliability
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    • v.13 no.2
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    • pp.117-127
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    • 2013
  • In this paper, we studied the correlation between the activation energy($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. The samples used in the study were composed of low power LED 3type and high power LED 5type. To calculate the activation energy($E_a$) of the White LED PKGs conducted three conditions of high temperature operation test based on the Arrhenius model. The number of samples used in the experiment is 10, respectively. The $T_j$ of Conditions and target specifics expressed $T_{j1}$, $T_{j2}$, $T_{j3}$. The activation energy ($E_a$) of the samples was calculated based on the value of the actually measured lifetime. We investigated the correlation between the activation energy ($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. As a result, White LED PKGs activation energy($E_a$) value was confirmed that the material properties affected more than the structural characteristics of the LED PKGs and we found that activation energy of each LED Model has difference. Normally, The activation energy of phosphor of YAG type was indicated from 0.21 to 0.25[eV] and Silicate type was indicated from 0.12 to 0.16[eV]. According to the results, we confirmed that the activation energy of phosphor of YAG type is higher more than The activation energy of phosphor of Silicate type.

Studies on the Fabrication of 0.2 ${\mu}m$Wide-Head T-Gate PHEMT′s (0.2 ${\mu}m$ Wide-Head T-Gate PHEMT 제작에 관한 연구)

  • Jeon, Byeong-Cheol;Yun, Yong-Sun;Park, Hyeon-Chang;Park, Hyeong-Mu;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.18-24
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    • 2002
  • n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

Design and fabrications of AlGaAs/InGaAs/GaAs Power PHEMT (AlGaAs/InGaAs/GaAs Power PHEMT 설계.제작)

  • 이응호;조승기;윤용순;이일형;이진구
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.12-15
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    • 2000
  • In this paper, we have fabricated the PHEMT's with AlGaAs/InGaAs/GaAs and measured characteristics of DC and frequencies. The PHEMT's has a 0.35$\mu\textrm{m}$ gate length, gate width of 60$\mu\textrm{m}$ and 80$\mu\textrm{m}$, and fingers of 2 and 4. From the measurements results for the 60$\mu\textrm{m}$ ${\times}$ 2 PHEMT's, we obtained 1.2V of Vk, -3.5V of Vp, 46mA of Idss, 221mS/mmof gm, and 3.6dB of S$\sub$21/ gain, 45GHz of f$\sub$T,/ 100GHz of fmax. And, in case of 80$\mu\textrm{m}$ ${\times}$ 4 PHEMT's, we obtained 1.2V of Vk, -4.5V of Vp, 125mA of Idss, 198mS/mm of gm, and 2.0dB of S$\sub$21/ gain. 44GHz of f$\sub$T/, 70GHz of fmax at 35GHz frequency. Also, MAG are decreased as a number of finger are Increased.

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Characteristics of DC 48[V] telecommunication power supply (DC 48[V] 통신용 전원 장치의 특성)

  • Jung, H.T.;Jo, M.C.;Youn, Y.T.;Kim, J.Y.;Mun, S.P.;Suh, K.V.
    • Proceedings of the KIEE Conference
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    • 2005.07d
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    • pp.3114-3116
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    • 2005
  • The AC-DC converter, which has three-phase AC power as input and isolated DC power as output is used for the regulated DC power supply of the telecommunication power processing system for several kilowatt class applications. The conventional DC power supply for the telecommunication power system comprises a PWM rectifier with sine-wave shaping input current unity power factor and a DC/DC converter connected to the PWM converter, which obtains DC 48[V]. Since power passes through these two power stage converters, the conversion power loss is difficult to provide high efficiency. To resolve these problems, this paper presents a new PWM rectified as a 1-stage power conversion method. It simulation and experimental results as proved from a practical point of view that 92.1[%] of conversion efficiency and input current which can meet harmonics regulation of the Class-A in IEC61000-3-3 are achieved.

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Hydrogen Gas Sensing Characteristics of Pd-SiC Schottky Diode (Pd-SiC 쇼트키 다이오드의 수소 가스 감응 특성)

  • Kim, Chang-Kyo;Lee, Joo-Hun;Lee, Young-Hwan;Choi, Suk-Min;Cho, Nam-Ihn
    • Journal of Sensor Science and Technology
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    • v.8 no.6
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    • pp.448-453
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    • 1999
  • A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was explored. Hydrogen-sensing behaviors of Pd-SiC Schottky diode were analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

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Studies on the High-gain Low Noise Amplifier for 60 GHz Wireless Local Area Network (60 GHz 무선 LAN의 응용을 위한 고이득 저잡음 증폭기에 관한 연구)

  • 조창식;안단;이성대;백태종;진진만;최석규;김삼동;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.21-27
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    • 2004
  • In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

Bacteriological Characteristics of Unidentified Vibrio sp., Hemolysin Producer Isolated from Brackish Water -2. Bacteriological Characteristics of Vibrio sp. E10 Similar to Vibrio mimicus- (기수에서 분리된 용혈독소를 생산하는 미분류 Vibrio sp.의 세균학적 특징 -2. Vibrio mimicus와 유사한 Vibrio sp. E10의 세균학적 특성-)

  • Kim Young Man;Yu Hong Sik;Oh Hee Kyung
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.35 no.6
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    • pp.545-550
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    • 2002
  • A hemolysin producing bacterial strain which belong to Vibrio species was isolated from the Kum River estuary. In the process of identification, the strain did not show characteristics of known Vibrio species; thus, the strain was designated as Vibrio sp, E10 (V. kunsan) tentatively and further identification study was carried out by comparing its bacteriological characteristics. Morphologically Vibrio sp, E10 was comma shaped rod with a polar flagellium. Clear hemolysis zones were observed with the strain against human and sheep blood agar. Hemollytic toxicity was confirmed by strong vascular Permeability and fatal toxicity against mouse was also observed. Therefore the strain was a pathogenic vibrio. Growth conditions for Vibrio sp. E10 were ranged salinity of 0$\~$$4.5\%$, pH of 6.2$\~$9.2, temperature of 14$\~$42$^{\circ}C$, respectively, 16S rDNA partial sequence of Vibrio sp, E10 showed $99\%$ homology with dozens of V. cholerae species including V, cholerae El Tor N16961 and V, snmisnfus ATCC 33653T. This strain belonged to Proteobacteria; gamma subdivision; Vibrionacea: Vibrio. But, among knorn Vibrio species no identical styains were found when using automatic bacteria identification system ($MicroLog^{TM}$system, release 4.0, Biolog Inc., USA) which evaluated the ability of metabolizing 95 kinds of carbon and nitrogen sources. Vibrio sp, E10 showed 18 and 11 different responses as compared to V. mimicus and V, cholerae, respectively.

The study on the Long-Term overvoltage test of EHV Gas Voltage Transformer (초고압 GAS Voltage Transformer의 장기 과전압 시험에 관한 연구)

  • Song, H.S.;Park, K.W.;Keu, G.S.;Jung, J.G.
    • Proceedings of the KIEE Conference
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    • 2002.11d
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    • pp.157-159
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    • 2002
  • In order to obtain reliability and extend life of GAS Voltage Transformer in GIS, it has to prevent aging by overvoltage considered to insulation characteristics of insulating material. This paper describes some characteristics of V-T characteristics and partial discharges.

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