• Journal of the Korean Mathematical Society
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• v.31 no.3
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• pp.521-537
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• 1994

We consider the Schrodinger equation of quantum mechanics $$ i\hbar\frac{\partial t}{\partial}\Gamma(t, \vec{\eta}) = -\frac{2m}{\hbar}\Delta(t, \vec{\eta}) + V(\vec{\eta}\Gamma(t, \vec{\eta}) (1.1) $$ $$ \Gamma(0, \vec{\eta}) = \psi(\vec{\eta}), \vec{\eta} \in R^n $$ where $\Delta$ is the Laplacian on $R^n$, $\hbar$ is Plank's constant and V is a suitable potential.

• Honam Mathematical Journal
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• v.1 no.1
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• pp.43-49
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• 1979

G를 유한군으로, C를 모든 복소수체로 가정하고, V를 C상에서의 유한차원 벡터공간이라 하자. V상에서의 G의 사영적 표시는, X, $y{\epsilon}G$이고 ${\alpha}:\;G{\times}G{\rightarrow}C$를 Facto set이라 할 때 $T(x)T(y)=T(xy){\alpha}(x,y)$이 되는 함수 $T=\;G{\rightarrow}GL(V)$를 말한다. 본 논문의 목적은 군에 대한 Extension theory를 사용해서, G상의 factor set들의 동치류들은 G의 Second Cohomology group과 동형이라는 것을 증명하는 것이다.

• Journal of the Chungcheong Mathematical Society
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• v.34 no.3
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• pp.259-269
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• 2021

We shall study the following. Let 𝜙 be an expansive flow on a compact TVS-cone metric space (X, d). First, we give some equivalent ways of defining expansiveness. Second, we show that expansiveness is conjugate invariance. Finally, we prove that lim sup ${\frac{1}{t}}$ log v(t) ≤ h(𝜙), where v(t) denotes the number of closed orbits of 𝜙 with a period 𝜏 ∈ [0, t] and h(𝜙) denotes the topological entropy. Remark that in 1972, R. Bowen and P. Walters had proved this three statements for an expansive flow on a compact metric space [?].

• Bulletin of the Korean Mathematical Society
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• v.32 no.2
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• pp.179-189
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• 1995

Let $V \subset R^n$ be a convex homogeneous cone which does not contain straight lines, so that the automorphism group $$ G = Aut(R^n, V)^\circ = { g \in GL(R^n) $\mid$ gV = V}^\circ $$ ($\circ$ denoting the identity component) acts transitively on V. A convex cone V is called "self-dual" if V coincides with its dual $$ (1.1) V' = { x' \in R^n $\mid$ < x, x' > > 0 for all x \in \bar{V} - {0}} $$ where $\bar{V}$ denotes the closure of V.sure of V.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.147-150
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• 2009

We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

• Bulletin of the Korean Mathematical Society
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• v.55 no.5
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• pp.1441-1462
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• 2018

In this paper, we investigate the fractional p&q-Kirchhoff type system $$\{M_1([u]^p_{s,p})(-{\Delta})^s_pu+V_1(x){\mid}u{\mid}^{p-2}u\\{\hfill{10}}={\ell}k^{-1}F_u(x,\;u,\;v)+{\lambda}{\alpha}(x){\mid}u{\mid}^{m-2}u,\;x{\in}{\Omega}\\M_2([u]^q_{s,q})(-{\Delta})^s_qv+V_2(x){\mid}v{\mid}^{q-2}v\\{\hfill{10}}={\ell}k^{-1}F_v(x,u,v)+{\mu}{\alpha}(x){\mid}v{\mid}^{m-2}v,\;x{\in}{\Omega},\\u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}{\subset}{\mathbb{R}}^N$ is an unbounded domain with smooth boundary ${\partial}{\Omega}$, and $0<s<1<p{\leq}q$ and sq < N, ${\lambda},{\mu}>0$, $1<m{\leq}k<p^*_s$, ${\ell}{\in}R$, while $[u]^t_{s,t}$ denotes the Gagliardo semi-norm given in (1.2) below. $V_1(x)$, $V_2(x)$, $a(x):{\mathbb{R}}^N{\rightarrow}(0,\;{\infty})$ are three positive weights, $M_1$, $M_2$ are continuous and positive functions in ${\mathbb{R}}^+$. Using variational methods, we prove existence of infinitely many high-energy solutions for the above system.

• ETRI Journal
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• v.39 no.5
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• pp.746-755
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• 2017

In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage ($V_t$) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding $n^+/p^+$ floating regions. Moreover, the holding voltage ($V_h$) is improved by using segmented technology. The proposed circuit was fabricated using a $0.18-{\mu}m$ bipolar-CMOS-DMOS process with a width of $100{\mu}m$. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the $V_t$ of the proposed circuit increased from 14 V to 27.8 V, and $V_h$ increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V.

• Journal of Practical Agriculture & Fisheries Research
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• v.22 no.2
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• pp.51-58
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• 2020

Continuous mortality in commercially cultured Japanese eel (Anguilla japonica), showing symptoms of dermal ulcerations and focal hemorrhages on the body, occurred on a private farm in November, 2019 in Korea. A series of mortality had been described in one local eel culture farm from November to December in 2019. From the three cases, three isolates of Vibrio spp. were recovered from the blood, ascitic fluid, and kidney of the dead fish, respectively. Based on the 16S rRNA sequence comparisons, the Vibrio isolates from the 1^st and 3^rd cases (strain named 1E1-2 and 3K1-2) were identified as V. fluvialis and the isolate from the 2^nd case was identified as V. plantisponsor (strain named 2A3-1). Moreover, the 16S rRNA-based phylogenetic analysis revealed that strain 1E1-2 and 3K1-2 were most similar to V. fluvialis NBRC 103150^T, and strain 2A3-1 was most similar to V. plantisponsor NBRC103148^T. According to the results of the antibiotic resistance determination, V. fluvialis 1E1-2 showed intermediate resistance to tetracycline and chloramphenicol, and was resistant to trimethoprim-sulfamethoxazole. V. plantisponsor 2A3-1 showed intermediate resistance to ciprofloxacin and levofloxacin, and was resistant to trimethoprim-sulfamethoxazole. V. fluvialis 3K1-2 showed intermediate resistance to tetracycline, and was resistant to ampicillin and trimethoprim-sulfamethoxazole. These results have provided the evidences on the occurrence of antibiotic-resistant Vibrio infection in commercially cultured Japanese eels are present in Korea.

• Progress in Medical Physics
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• v.13 no.4
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• pp.195-201
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• 2002

Several investigators have presented the effects of external magnetic fields on the dose distributions for clinical electron and photon beams. We focus the low energy electron beam with more lateral scatter In this study we calculated the beam profiles for an clinical electron beam of 6 MeV with longitudinal magnetic fields of 0.5 T-3.0 T using a Monte Carlo code. The principle of dose enhancements in the penumbra region is to deflect the laterally scattered electrons from its initial direction by the skewness of the laterally scattered electrons along the direction of magnetic field lines due to Lorentz force under longitudinal magnetic field. To discuss the dose enhancement effect on the penumbra area from the calculated results, we introduced the simple term of penumbra reduction ratio (PRR), which is defined as the percentage difference between the penumbra with and without magnetic field at the same depth. We found that the average PRR are 33%, and 49% over the depths of 1.5 cm, 2.0 cm, and 2.4 cm for the magnetic fields of 2.0 T and 3.0 T respectively. For the case of 0.5 T and 1.0 T the effects of magnetic filed were not observed significantly. In order to obtain the dose enhancement effects by the external magnetic field, we think that its strength should be more than 2 T approximately. We expect that the PRR would be saturated to 50-60% with magnetic fields of 3 T-5 T As a result of these calculations we found that the penumbra widths can be reduced with increased magnetic fields. This Penumbra reduction is explained as a result of electron lateral spread outside the geometrical edges of the beam in a longitudinal magnetic field. This means that the electron therapy benefits from the external magnetic fields.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.