• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.212-215
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• 2016

In this paper, a 5.08 GHz Ring Voltage Controlled Oscillator(Ring VCO) was implemented using $0.18{\mu}m$ standard CMOS technology. The proposal Ring VCO is 3-stage structure. This research confirmed that the each stage's different transistor size ratio influence the current change and alter power consumption consequentially. This circuit is formed to control the current thereby adding the Current Mirror and to tune the frequency by supplying control voltage. It has an 65.5 %(1.88~5.45 GHz) tuning range. The measured output power is -0.30 dBm. The phase noise is -87.50 dBc/Hz @1 MHz offset with operating frequency of 5.08 GHz fundamental frequency. The total power consumption of Ring VCO is 31.2 mW with 2.4 V supply voltage.

• Journal of applied mathematics & informatics
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• v.40 no.5_6
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• pp.915-923
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• 2022

The purpose of the present paper is to obtain commutativity of prime Γ-near-ring N with generalized derivations F and G with associated derivations d and h respectively satisfying one of the following conditions:(i) G([x, y]α = ±f(y)α(xoy)βγg(y), (ii) F(x)βG(y) = G(y)βF(x), for all x, y ∈ N, β ∈ Γ (iii) F(u)βG(v) = G(v)βF(u), for all u ∈ U, v ∈ V, β ∈ Γ,(iv) if 0 ≠ F(a) ∈ Z(N) for some a ∈ V such that F(x)αG(y) = G(y)αF(x) for all x ∈ V and y ∈ U, α ∈ Γ.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Communications of the Korean Mathematical Society
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• v.34 no.1
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• pp.83-93
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• 2019

Let R be a noncommutative prime ring of characteristic different from 2, U the Utumi quotient ring of R, C the extended centroid of R and f($x_1,{\ldots},x_n$) a noncentral multilinear polynomial over C in n noncommuting variables. Denote by f(R) the set of all the evaluations of f($x_1,{\ldots},x_n$) on R. If d is a nonzero derivation of R and G a nonzero generalized derivation of R such that $$d(G(u)u){\in}Z(R)$$ for all $u{\in}f(R)$, then $f(x_1,{\ldots},x_n)^2$ is central-valued on R and there exists $b{\in}U$ such that G(x) = bx for all $x{\in}R$ with $d(b){\in}C$. As an application of this result, we investigate the commutator $[F(u)u,G(v)v]{\in}Z(R)$ for all $u,v{\in}f(R)$, where F and G are two nonzero generalized derivations of R.

• Journal of IKEEE
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• v.14 no.3
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• pp.199-204
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• 2010

In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.1-5
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• 2010

In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.105-112
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• 2009

In this paper, we investigated abnormal ESD failure on guard-rings in the smart power IC fabricated with $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology. Initially, ESD failure occurred below 200 V in the Machine Model (MM) test due to current crowding in the parasitic diode associated with the guard-rings which are generally adopted to prevent latch-up in high voltage devices. Optical Beam Induced Resistance Charge (OBIRCH) and Scanning Electronic Microscope (SEM) were used to find the failure spot and 3-D TCAD was used to verify cause of failure. According to the simulation results, excessive current flows at the comer of the guard-ring isolated by Local Oxidation of Silicon (LOCOS) in the ESD event. Eventually, the ESD failure occurs at that comer of the guard-ring. The modified comer design of the guard-ring is proposed to resolve such ESD failure. The test chips designed by the proposed modification passed MM test over 200 V. Analyzing the test chips statistically, ESD immunity was increased over 20 % in MM mode test. In order to avoid such ESD failure, the automatic method to check the weak point in the guard-ring is also proposed by modifying the Design Rule Check (DRC) used in BCD technology. This DRC was used to check other similar products and 24 errors were found. After correcting the errors, the measured ESD level fulfilled the general industry specification such as HBM 2000 V and MM 200V.

• The Journal of Korean Physical Therapy
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• v.17 no.3
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• pp.329-338
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• 2005

The determination of peripheral nerve conduction velocity is an important part to electrodiagnosis. Its value as neurophysiologic investigative procedure has been known for many years but normal value of digital nerve was not reported in Korea. To evaluate of digital nerve conduction velocity of median nerve for obtain clinically useful reference value and compare difference in each fingers. 71 normal volunteers(age, 19-65 years; 142 hands) examined who has no history of peripheral neuropathy, diabetic mellitus, chronic renal failure, endocrine disorders, anti-cancer medicine, anti-tubercle medicine, alcoholism, trauma, radiculopathy. Nicolet Viking II was use for detected conduction velocity and amplitude of digital nerves in median nerve. Data analysis was performed using SPSS. Descriptive analysis was used for obtain mean and standard deviation, ANOVA was used to compare each fingers and independent t-test was used to compare between Rt and Lt side also compare between different in genders. Conduction velocity of the right thumb was 49.77m/sec, index finger was 56.80m/sec, middle finger was 56.15m/sec and ring finger was 53.38m/sec. The left thumb was 50.48m/sec, index finger was 56.76m/sec, middle finger was 55.99m/sec and ring finger was 53.23m/sec. Amplitude of the right thumb was $64.30{\mu}V$, index finger was $73.95{\mu}V$, middle finger was $77.97{\mu}V$ and ring finger was $43.92{\mu}V$. The left thumb was $74.21{\mu}V$, index finger was $85.72{\mu}V$, middle finger was $88.06{\mu}V$ and ring finger was $47.28{\mu}V$. There were significantly difference between thumb, index, middle and ring fingers(p<.01) but there were no statistically difference between conduction velocity and amplitude of index and middle fingers(p>.01). The conduction velocity of index finger are faster than other fingers and amplitude of middle finger are greater than other fingers. The present results revealed that electodiagnosis can easily perform in index and middle finger for digital nerve of median nerve study.

• Journal of Korean Tunnelling and Underground Space Association
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• v.15 no.3
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• pp.225-235
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• 2013

Cutter forces acting on a disc cutter in TBM are the key parameters for TBM design and its performance prediction. This study aimed to experimentally evaluate cutter forces with different ring shapes in a hard rock. The stiffness of a cutter ring was indirectly estimated from a series of full-scale linear cutting tests. From the experiments, it was verified that the rolling stress acting on a V-shape disc cutter was much higher than on a CCS disc cutter even though the penetration depth by a V-shape disc cutter could be increased in the same cutting condition. Finally, it is suggested that a prediction model considering the shape parameters of a disc cutter should be used for its better prediction.

• Bulletin of the Korean Mathematical Society
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• v.50 no.5
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• pp.1711-1723
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• 2013

P. V$\acute{a}$mos called a ring R 2-good if every element is the sum of two units. The ring of all $n{\times}n$ matrices over an elementary divisor ring is 2-good. A (right) self-injective von Neumann regular ring is 2-good provided it has no 2-torsion. Some of the earlier results known to us about 2-good rings (although nobody so called at those times) were due to Ehrlich, Henriksen, Fisher, Snider, Rapharl and Badawi. We continue in this paper the study of 2-good rings by several authors. We give some examples of 2-good rings and their related properties. In particular, it is shown that if R is an exchange ring with Artinian primitive factors and 2 is a unit in R, then R is 2-good. We also investigate various kinds of extensions of 2-good rings, including the polynomial extension, Nagata extension and Dorroh extension.