1 |
E. G. Kang and M. Y. Sung, "A novel
lateral trench electrode IGBT for super
electrical characteristics", J. of KIEEME(in
Korean), No. 15, Vol. 9, p. 758, 2002.
|
2 |
K. Sheng, S. J. Finney, and B. W. Williams,
"Improved understand- switched thyristors",
Proceedings of the ISPSD, p. 48, 1994.
|
3 |
S. Sridhar and B. J. Baliga, "The dual gate
emitter switched thyristor", IEEE EDL, Vol.
32, No. 17, p. 25, 1996.
|
4 |
N. Iwamuro and A. Okamoto, "Forward biased
safe operating area of emitter switched thyristor",
IEEE Trans. ED, Vol. 42, p. 334, 1995.
DOI
ScienceOn
|
5 |
N. Thapar and B. J. Baligar, "An experimental
evluation of the on-state performance of trench
IGBT designs", SSE, Vol. 45, No. 5, p. 771, 1998.
|
6 |
F. Udera and S. S. M. Chan, "1.2 kV trench
insulated gate bipolar transistors with ultra
low on resistance", IEEE Trans. EDL, Vol.
20, No. 8, p. 428, 1999.
DOI
|