• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.36-38
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• 2001

A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.36-45
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• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.173-179
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• 2006

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

• Journal of Information Processing Systems
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• v.11 no.4
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• pp.495-508
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• 2015

In this paper, a novel robust medical images watermarking scheme is proposed. In traditional methods, the added watermark may alter the host medical image in an irreversible manner and may mask subtle details. Consequently, we propose a method for medical image copyright protection that may remedy this problem by embedding the watermark without modifying the original host image. The proposed method is based on the visual cryptography concept and the dominant blocks of wavelet coefficients. The logic in using the blocks dominants map is that local features, such as contours or edges, are unique to each image. The experimental results show that the proposed method can withstand several image processing attacks such as cropping, filtering, compression, etc.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.3
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• pp.424-433
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• 2001

We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

• Biomedical Science Letters
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• v.28 no.4
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• pp.211-222
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• 2022

After more than two years of efforts to end the corona pandemic, a gradual recovery is starting in countries with high vaccination rates. Easing public health policies for a full-fledged post-corona era, such as lifting the mandatory use of outdoor mask and quarantine measures in entry have been considered in Korea. However, the continuous emergence of new variants of SARS-CoV-2 and limitations in vaccine efficacy still remain challenging. Fortunately, T cells and memory T cells, which are key components of adaptive immunity appear to contribute substantially in COVID-19 control. SARS-CoV-2 specific CD4⁺/CD8⁺ T cells are induced by natural infection or vaccination, and rapid induction and activation of T cells is mainly associated with viral clearance and attenuated clinical severity. In addition, T cell responses induced by recognition of a wide range of epitopes were minimally affected and conserved against the highly infectious subsets of omicron variants. Polyfunctional SARS-CoV-2 specific T cell memory including stem cell-like memory T cells were also developed in COVID-19 convalescent patients, suggesting long lasting protective T cell immunity. Thus, a robust T-cell immune response appears to serve as a reliable and long-term component of host protection in the context of reduced efficacy of humoral immunity and persistent mutations and/or immune escape.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.160-161
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• 2003

위상특이점이라고도 불리는 광 보텍스(optical vortex)를 포함한 빔은 파면의 특이성 때문에 많은 관심을 끌어왔다. 위상을 정의할 수 없는 위상특이점을 따라서는 빔의 동일위상파면이 소용돌이 형태를 가진다. 그 소용돌이 정도는 위상전하(topological charge) 라는 양으로 특징지을 수 있다. 광 보텍스는 선형 및 비선형적 특성에 대해 많은 연구가 이루어져왔다. 레이저 공진기를 변형하거나, 홀로그램이나 위상마스크에 레이저를 조사하여 보텍스를 발생시키는 방법 등의 여러 방법이 알려져 있다. (중략)

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

• The Journal of the Acoustical Society of Korea
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• v.16 no.4
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• pp.76-84
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• 1997

In this paper, one of the core components of a mobile communication system, VCO(Voltage Controlled Oscillator) IC is designed. The VCO IC was designed, have realized as LC turned oscillator using varicap. LC sinusoidal tuned oscillator generally requires external inductors and thus remainding circuit is implemneted in monolithic IC. The circuit is fabricated using an 15 mask IC process and has a die size of 1150um${\times}$780um. The tests showed that VCO was operated at frequencies in the regions between 880MHz-915MHz in the control voltage range of 1V to 3V at 5V supply voltage and as the power supply was varied from 4.5V to 5.5V, the frequency varied 425KHz/V. The VCO IC has frequency shift of 1.97MHz/T, carrier level of -7dBm and power consumption of 16.7mA. Also it has phase noise of -80dBc/Hz, offset at 50KHz and harmonic response of center frequency is -41dBm. For the future development of the transceiver 1 chip, the previously mentioned external devices need to be incorporated into Si MMIC.