1 |
K. D. Yoo, C. D. Marsh, and G. R. Booker, 'Two-dimensional dopant concentration profiles from ultra-shallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method', Appl. Phys. Letters, Vol. 80, No. 15, p. 2687, 2002
DOI
ScienceOn
|
2 |
Synopsys Inc., 'http://www.synopsis.com', TCAD, Taurus TSUPREM4, 2006
|
3 |
H. H. Andersen and J. F. Ziegler, 'Hydrogen, stopping power and ranges in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 64, 1977
|
4 |
U. Littmark and J. F. Ziegler, 'Handbook of range distributions for energetics ions in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 45, 1980
|
5 |
W. C. Jung, 'A study of boron profiles by high energy ion implantation in silicon', J. of KIEEME (in Korean), Vol. 15, No.4, p. 289, 2002
|
6 |
R. P. Webb and E. Maydell, 'Comparisons of fast algorithms for calculation of range profiles in layered structures', Nucl. Inst. and Meth. B, Vol. 33 p. 117, 1988
DOI
ScienceOn
|
7 |
M. A. gribelyuk, M. R. McCartney, J. Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and d. J. Smith, 'Mapping of electrostatic potential in deep submicron CMOS devices by electron holography', Phy. Rev. Lett., Vol. 89, No. 2, p. 1, 2002
|
8 |
W.-C. Jung, 'A study of experiment and developed model by antimony high energy implantation in silicon', J. of KIEEME(in Korean), Vol. 17, No. 11, p. 1156, 2004
|
9 |
H. Ruecker, B. Henemann, R. Bath, D. Bolze, V. Melnik, D. Krueger, and R. Kurps, 'Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect', Vol. 82, No.5, p. 826, 2003
DOI
ScienceOn
|
10 |
J. P. Biersack, 'Basic physical aspects of high energy implantation', Nucl. Inst. and Meth. B, Vol. 35, p. 205, 1988
DOI
ScienceOn
|
11 |
J. F. Ziegler, 'Ion Implantation Science and Technology', Ion Implantation Technology Co., New Jersey, p. 125, 1996
|
12 |
J. D. Plummer, M. D. Deal, and P. B. Griffin, 'Silicon VLSI Technology', Prentice Hall, Inc., p. 451, 2000
|
13 |
R. C. Jaeger, 'Introduction to Microelectronic Fabrication', Prentice Hall, New Jersey, 2002
|
14 |
R. Smith, 'Atomic and Ion Collisions in Solids and at Surface', Cambridge University Press, 1997
|
15 |
W.-C. Jung, 'I-V and C-V measurements of fabricated junction diode in antimony doped (111) silicon', Trans. EEM, Vol. 3, No. 2, p. 10, 2002
|
16 |
J. F. Ziegler, J. P. Biersack, and U. Littmark, 'The stopping and range of ions in matter', Vol. 1, New York: Pergamon Press, p. 45, 1985
|
17 |
R. B. Fair, 'The role transient damage annealing in shallow junction formation', Nucl. Instr. and Meth. B, Vol. 37/38, p. 371, 1989
DOI
ScienceOn
|
18 |
J. F. Ziegler, 'The stopping of energetic light ions in elemental matter', J. Appl. Phys., Vol. 85, No.3, p. 1249, 1999
DOI
ScienceOn
|
19 |
J. F. Ziegler, 'SRIM 2000 manual', http://www.srim.org
|
20 |
K. M. Klein, C. Park, and A. F. Tasch, 'Ultra shallow junction formation in silicon using implantation', IEEE Trans. Electron Devices ED Vol. 39, p. 1614, 1992
DOI
ScienceOn
|
21 |
A. F. Tasch and S. K. Banerjee, 'Ultra shallow junction formation in silicon using ion implantation', Nucl. Inst. and Meth. In Phys. B, Vol. 112, p. 177, 1996
DOI
ScienceOn
|
22 |
R. Brindos, P. Keys, K. S. Jones, and M. E. Law, 'Effects of arsenic doping on {311} defect dissolution in silicon', Appl. Phys. Letters, Vol. 75, No.2, p. 229, 1999
DOI
|
23 |
H. Cerva, 'Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections', J. Vac. Sci. Technol. B, Vol. 10, No.1, p. 491, 1992
DOI
|