• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.4
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• pp.243-248
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• 2022

The purpose of this paper is to etching SUS MASK by adding an additive (F300) to FeCl3. The equipment used in the experiment is a self-made automatic liquid management system. The automatic liquid management system is a device capable of controlling the Oxidation Reduction Potential (ORP) and specific gravity in real time and supplying FeCl3 and additives in a quantitative manner. SUS MASK was etched in units from 10 sheets up to 200 sheets for 1 minute. It was confirmed that when the initial SUS MASK was 10 sheets, the ORP value started with 628 mV and measured at 611 mV from the time of 40 sheets being injected, and maintained close to 610 mV up to 200 sheets. The specific gravity was maintained near 1.640. And the SUS MASK was measured close to 0.4 mm from 50 sheets to 200 sheets. The experimental conditions of ORP had a specific gravity of 610 mV, 1.463, an etching pressure of 3.0 kg/cm2, an additive (F300) ratio of 1.2%, and the hole size was measured by up to 200 sheets of 10 sheets at once etching. As a result, the diameter approached 0.4 mm from 20 sheets. Even if the number of SUS MASK was increased, the ORP and specific gravity were well controlled, and it was confirmed that the experimental target value was close to 0.4 mm.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• Journal of Internet Computing and Services
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• v.20 no.5
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• pp.105-111
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• 2019

Core technologies that lead the Fourth Industrial Revolution era, such as artificial intelligence, big data, and autonomous driving, are implemented and serviced through the rapid development of computing power and hyper-connected networks based on the Internet of Things. In this paper, we implement two different models for drivable area segmentation in various environment, and propose a better model by comparing the results. The models for drivable area segmentation are using DeepLab V3+ and Mask R-CNN, which have great performances in the field of image segmentation and are used in many studies in autonomous driving technology. For driving information in various environment, we use BDD dataset which provides driving videos and images in various weather conditions and day&night time. The result of two different models shows that Mask R-CNN has higher performance with 68.33% IoU than DeepLab V3+ with 48.97% IoU. In addition, the result of visual inspection of drivable area segmentation on driving image, the accuracy of Mask R-CNN is 83% and DeepLab V3+ is 69%. It indicates Mask R-CNN is more efficient than DeepLab V3+ in drivable area segmentation.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.65-71
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• 1999

The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

• Textile Coloration and Finishing
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• v.29 no.1
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• pp.45-54
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• 2017

Ultraviolet radiation have much influenced with a deep wrinkles, roughness, laxity of skin damage and pigmentation through oxidative stress and oxidative photo-damage. This study investigates the functional properties of hydrogel facial mask sheets made from agar, Styela clava tunics and Broussonetia papyrifera tunics. The skin of S. clava is covered with a hard cellulose containing glycoprotein, glycosaminoglycan and chondroitin sulfate. B. papyrifera is better known as Paper mulberry. It contains kazinol which serves as a tyrosinase inhibitor and skin whitening agent. The tensile strength of facial mask sheet was measured by universal testing machine, and the water absorption and moisture permeability of facial mask sheet were measured by dryer. Additionally, the DPPH assay and MTT assay were conducted for anti-oxidative activity and cytotoxicity of facial mask sheet. The whitening effect of the facial mask sheet was measured by tyrosinase inhibitor assay. These tests showed that the three ingredients are suitable cosmetic materials. The results reveal that they produce a high quality hydrogel facial mask sheet when the membrane contains 1%(W/V) of agar, 0.1%(W/V) of B. papyrifera tunics and 0.05%(W/V) of S. clava tunics.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.323-327
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• 2021

This paper produced SUS MASK, which is used for OLEDs, using an automatic liquid management system. The SUS MASK was tested by setting the hole diameter to 0.4 mm. The additive F300 was found to be excellent as the hole diameter was close to 0.4 mm and the error range was measured to be 0.08 on average. And as a result of measuring the weight reduction amount of CuCl2 and FeCl3 according to the change in oxidation-reduction potential (ORP), FeCl3 is relatively sensitive to ORP changes. Experiments were conducted on whether ORP (610 mV) and specific gravity (1.463) were automatically controlled while continuously etching the SUS Mask. Experimental results show that the automatic liquid management system is well controlled because the setting value is not significantly changed. After setting the hole diameter to 0.4 mm as the target, the experiment results were measured from 0.36 to 0.44. Therefore, it is expected that etching processing in the manufacturing process of SUS MASK can be improved with higher precision by applying the manufactured automatic liquid management system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.34-42
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• 1981

A 512-bit Task Programmable ROM has been designed and fabricated using PMOS technology. The content of the memory was written through the gate pattern during the fabrication process, and was checked by displaying the output of the chip on an oscilloscope with 512(32$\times$16) matrix points. The operation of the chip was surcessful with operating voltage from -6V to -l2V, The power consumption and propagation delay time have been measured to be 3mW and 13 $\mu$sec, respectively at -6 Volt. The power consunption increased to 27mW and propagation delay time decreased to 3$\mu$sec at -12V. The output of the chip was capable of driving the input of a TTL gate directly and retained a high impedence state when the chip solect function disabled the output.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.460-465
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• 2002

The nonlinear vibration of the CRT shadow mask is analyzed in consideration of the V-shaped tension distribution and the effect of wire impact damping. The reduced order FEM model of the shadow mask is obtained from dynamic condensation for the mass and stiffness matrices. Damping wire is modeled using the lumped parameter method to effectively describe its contact interactions with the shadow mask. The nonlinear contact-impact model is composed of spring and damper elements, of which parameters are determined from the Hertzian contact theory and the restitution coefficient, respectively. The analysis model of the shadow mask with damping wires is experimentally verified through impact tests of shadow masks performed in a vacuum chamber. Using the validated analysis model of the shadow mask with damping wires, the‘design of experiments’technique is applied to search fur the optimal damping wire configuration so that the vibration attenuation of the shadow mask is maximized.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• Communications for Statistical Applications and Methods
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• v.12 no.3
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• pp.625-634
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• 2005

A procedure is proposed to identify multiple outliers in the logistic regression. It detects the leverage points by means of hierarchical clustering of the robust distances based on the minimum covariance determinant estimator, and then it employs a V-mask type criterion on the scatter plot of robust residuals against robust distances to classify the observations into vertical outliers, bad leverage points, good leverage points, and regular points. Effectiveness of the proposed procedure is evaluated on the basis of the classic and artificial data sets, and it is shown that the procedure deals very well with the masking and swamping effects.