• Transactions of Materials Processing
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• v.18 no.1
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• pp.59-66
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• 2009

In this study, V-notch part has been considered as one of safety components in rectangular cup used for mobile device. This kind of safety component in rectangular cup with the V-notch part, which controls adequately the increased internal pressure in the rectangular cup, plays an important role to prevent the explosion from the excessive internal pressure. The protecting mechanism on the mobile device against the explosion is that a series of fracture on the V-notch part at the critical internal pressure level occurs. Therefore, it is very crucial to estimate accurately the working pressure range of the safety device. Relationship between the working internal pressure and fracture phenomenon at V-Notch part was investigated through numerical analysis using ductile fracture criteria. Integral value, I, of the used ductile fracture criteria was calculated from effective stress and strain, and then the bursting pressure of the V-notch part was extracted. Comparisons between the estimated and experimental results show that this systematic approach to predict bursting pressure using the ductile fracture criteria gives fairly good agreements.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.708-718
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• 1996

The microstructure and electrical properties of the nonlinear ZnO varistor with A1$_{2}$ $O_{3}$ additions is investigated. The variation of nonlinear behavior with A1$_{2}$ $O_{3}$ additions is indicated from J-E and C-V measurement to be a result of the change of the interface defects density $N_{t}$ at the grain boundaries and the donor concentration $N_{d}$ in the ZnO grains. The optimum composition which has the nonlinear coefficients of -57 was observed in the sample with 0.005wt% A1$_{2}$ $O_{3}$ additions. The conduction mechanism at the pre-breakdown region is consistent with a Schottky thermal emission process obeying a relation given by $J^{\var}$exp[-(.psi.-.betha. $E^{1}$2/)kT] and the conduction process at the breakdown region follows a Fowler-Nordheim tunneling mechanism of the form $J^{\var}$exp(-.gamma./E).

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.1-4
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• 1988

Rates of solvolysis of trans-[Co$(N-eten)_2Cl_2$]$^+$ have been investigated using spectrophotometric method at various pressures and temperatures in the mixtures of water with the t-butyl alcohol which possesses a high structure inducing capacity in water. The values of ${\Delta}V^{\neq}$ obtained from pressure effect on the rate constants were 2.55∼ 5.83 $cm^3mol^{-1}$. These values were discussed in terms of dissociative mechanism. Extrema found in the variation of ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ with solvent composition correlated with extrema in the variation of the physical properties of the mixtures. The logarithms of rate constants correlated linearly with both Grunwald-Winstein parameter and the reciprocal of dielectric constant ($Ds^{-1}$). The gradient, m of Grunwald-Winstein plot for the trans-[Co$(N-eten)_2Cl_2$]$^+$ was 0.09, which is significantly lower than those for the other cobalt (Ⅲ)-dichloro complexes. It was suggested that the reaction is an Id mechanism with long extension of Co-Cl bond in the transition state, as found for the C-Cl bond in the transition state for the solvolysis of t-butyl chloride.

• Journal of Microbiology
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• v.41 no.3
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• pp.202-206
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• 2003

A protein, exhibiting a high similarity to the major serine transporter of Escherichia coli, SstT, was found in Haemophilus influenzae Rd. A Na$\^$＋/-stimulated serine transport activity was also detected in the cells. The gene (sstT) for the Na$\^$＋//serine symporter from the chromosome of H. influenzae was cloned, and the properties of the transporter investigated. The serine transport activity was stimulated by Na$\^$＋/. The uptake of Na$\^$＋/ was elicited by the addition of serine or threonine into the cells, supporting the idea that these amino acids are transported by a mechanism of Na$\^$＋//substrate symport. No uptake of H$\^$＋/ was elicited by the influx of serine. The serine transport via the SstT of H. influenzae was inhibited by excess threonine, which was used as another substrate. The $K_{m}$ and the $V_{max}$ values for the serine transport were 2.5 ${\mu}$M and 14 nmol/min/mg protein, respectively.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.68-68
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• 2017

Measurements of solar wind speed near the Sun (< 0.1 AU) are important for understanding acceleration mechanism of solar wind as well as space weather predictions, but hard to directly measure them. For the first time, we provide 2D solar wind speed maps in the LASCO field of view using three consecutive days data. By applying the Fourier convolution and inverse Fourier transform, we decompose the 3D intensity data (r, PA, t) into the 4D one (r, PA, t, v). Then, we take the weighted mean along speed to determine the solar wind speeds that gives V(r, PA, t) in every 30 min. The estimated radial speeds are consistent with those given by an artificial flow and plasma blobs. We find that the estimated speeds are moderately correlated with those from slow CMEs and those from IPS observations. A comparison of yearly solar wind speed maps in 2000 and 2009 shows that they have very remarkable differences: azimuthally uniform distribution in 2000 and bi-modal distribution (high speed near the poles and low speed near the equator) in 2009.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.225-230
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• 1987

Electrical conductivity of $CdO-La_2O_3$ system containing 0.8mol% of CdO was measured from 500 to $900^{\circ}C$ at oxygen partial pressures of $10^{-7}\;to\;10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $PO_2$ are found to be linear and the activation energy appears to be 0.97eV. The log ${\sigma}$vs. log $PO_2$ is found to be linear at oxygen pressures of $10^{-7}\;to\;10^{-1}$ atm and $500{\sim}900^{\circ}C$. The conductivity dependence on $PO_2$ at the above temperature range is given by ${\sigma}\;{\alpha}\;PO_2^{1/4}$. The defect structure in this system is believed to be complex, i.e., ${V_{La}}^{'''}$ and $V\"{o}$. The interpretations of conductivity dependences on temperature and $PO_2$ are presented and conduction mechanism is proposed to explain the data.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.232-235
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• 2003

To realize the development of HTS power apparatus, various breakdown test of L$N_2$ should be carried out and the mechanism should be understood more. Moreover the dielectric design technology that the basic dielectric experimental data applied to the HTS power system should be developed. In this paper, the electric fields for the insulation design were calculated for example with the analysis of Weibull distribution. And V-t characteristics of L$N_2$ were discussed. Around the breakdown voltage the n values were less than 1.

• Structural Engineering and Mechanics
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• v.7 no.3
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• pp.303-318
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• 1999

Cracking of reinforced concrete flexural members is a highly random phenomenon. In this paper reliability models are presented to determine the probabilities of failure of flexural members against the limit states of first crack and maximum crackwidth. The models proposed take into account the mechanism of cracking. Based on the reliability models discussed, Eqs. (8) and (9) useful in the reliability-based design of flexural members are presented.