Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs

동종 접합 InGaAs 수직형 Fin TFET의 온도 의존 DC 특성에 대한 연구

  • Baek, Ji-Min (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Kim, Dae-Hyun (School of Electronics Engineering, Kyungpook National Unversity)
  • 백지민 (경북대학교 전자공학부) ;
  • 김대현 (경북대학교 전자공학부)
  • Received : 2020.07.21
  • Accepted : 2020.07.31
  • Published : 2020.07.31
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Abstract

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

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