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http://dx.doi.org/10.46670/JSST.2020.29.4.275

Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs  

Baek, Ji-Min (School of Electronics Engineering, Kyungpook National Unversity)
Kim, Dae-Hyun (School of Electronics Engineering, Kyungpook National Unversity)
Publication Information
Journal of Sensor Science and Technology / v.29, no.4, 2020 , pp. 275-278 More about this Journal
Abstract
In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.
Keywords
tunneling; TFET; vertical; InGaAs; subthreshold swing; temperature-dependent;
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