• Proceedings of the KSR Conference
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• 2003.10c
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• pp.493-499
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• 2003

Railroad, a superior mode of public transportation provides safe, efficient, speedy, comfortable and economical service, has fundamentally different characteristics from airplanes, ships and cars. Among the unique characteristics of a railroad is the fact that it operates on fixed track with multiple car trains. The subway system was first selected as the best solution to difficult automobile traffic conditions and environmental problems. Seoul subway no.1line (Jongno line) was opened for service on August 15, 1974. Seoul city has completed and now operates eight subway lines (286.7km) since 1974. At present the subways operate in Busan, Daegu and Incheon city, and are under construction in Gwangju and Daejeon city. The power source for subway trains has been electricity since 1896, and power supply systems are the third rail type and/or the catenary system. The typical catenary system is the rigid bar type. R-bar and T-bar are used in the rigid bar type of catenary system, and the two types of R-bar and T-bar are uesd in Korea also. R-bar is used only for AC 25kV power supply and T-bar for DC 1,500V. From 30 years of subway experience I would like to suggest the most economic catenary system to ensure of safety, reliability and expediency for the railway lines to be constructed and the forthcoming replacement due to the life cycle after studying and analysing the characteristics, advantages and disadvantages of R-bar and T-bar.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.31-36
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• 1999

The $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors were synthesized and analyzed to develop new nitride compound phosphors. $Ca_3N_2$, $Si_3N_4$ and $EuF_3$(or $TbF_3$) powders were mixed, cold-pressed, and sintered to synthesize $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors. Photoluminescence(PL) and electroluminescence(EL) characteristics of the synthesized phosphors were measured and found to be similar to general emission spectra of 뗘 and Tb ion, respecticely. Threshold voltage($V_{th)$) and luminance of the $CaSiN_2:Eu$ TFEL device fabricated by sputtering were 90 V and 1.62 $cd/m^2$ at 280 V, respectively. The charge-voltage(Q-V) and transferred charge-phosphor field($Q_t-F_p$) characteristics of the TFEL devices were also measured.

• Journal of Auto-vehicle Safety Association
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• v.14 no.3
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• pp.48-59
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• 2022

A V2X system can be a candidate as a means to increase the stability of autonomous vehicles. In particular, in order to implement a Level 4 or higher autonomous driving system, the application of the V2X system is essential. Wireless communication technologies applicable to the V2X system include WAVE and C-V2X. Currently, the V2X service most used by autonomous driving systems is a service that provides signal phase and timing information and since real-time characteristic is a very important, verification of this service must be done. In this paper, we measured the time delay characteristics for providing signal phase and timing information using WAVE and LTE communication, and proposed a TOD-based signal phase and timing information generation method without using V2X communication system. To analyze the time delay characteristics, RTT (Round Trip Time) was measured as a result of the measurement. Average RTT using WAVE communication was 5.84ms and was 104.15ms with LTE communication. As a result of measuring the error between the signal phase and timing information generated based on TOD and the actual traffic light state, it was measured to be -0.284~3.784sec.

• Proceedings of the KIEE Conference
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• 2005.05b
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• pp.31-34
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• 2005

The 765kV transmission line will be maintained by live-line works for efficient operation, In order to maintain the 765kV transmission lines safely by live-line works, lineman have to know flashover characteristics of the insulator strings with damaged insulators. This paper suggests flashover characteristics of the 765kV insulator strings from experimental test results directly.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.560-568
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• 2005

The proposed Multi-level PDP sustain Driver is composed of the semiconductor devices with low voltage rating compared to those used in the prior circuit proposed by L. Wether, and it has two resonant periods during the charging (rising period) and discharging (falling period) the PDP in the sustaining voltage waveforms. In accordance with the change of timing phase$(T_{r1},\;T_{i1},\;T_{r2})$, the performance characteristics of a commercial PDP module has been carried out and compared the characteristic with the 42V6, made of LG Electronics co., Experimental results show that the performance characteristics of PDP module are greatly influenced by the variation of $T_{i1}\;and\;T_{r2}$. The variation of $T_{r1}$ do not influence much on the performances of PDP. With the conditions that $T_{r1}=60ns,\;T_{i1}=120ns,\;and\;T_{r2}=350ns$, we could get the performances listed as the luminance is increased $14.6\%$, the power consumptions is decreased $5.9\%$, the panel efficiency is increased $24.2\%$, module efficiency is increased $21.2\%$, compared to those shown in the commercial PDP module (42V6). Therefore, the proposed multi-level PDP sustain driver expected to be suitable to actual PDP module application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.403-406
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• 1999

The influence of temperature variation (25～125$^{\circ}C$) on poly-Si thin-film transistors (TFT's) was investigated by examining the electrical properties change of poly-Si films formed by solid phase crystallization (SPC). The n-channel poly-Si TFT's fabricated by SPC with channel length of 1.5 and loon ,respectively, exhibit good characteristics with a high ${\mu}$$\sub$FE/ ($\geq$82 and $\geq$60$\textrm{cm}^2$/V-s in 1.5 and 10$\mu\textrm{m}$, respectively), low V$\sub$t/, ($\leq$1.52 and $\leq$ 2.75V in 1.5 and 10$\mu\textrm{m}$, respectively), low S$\sub$t/, and good ON-OFF characteristics in spite of temperature variation. Thus, poly-Si films formed by SPC can be applied for the application to poly-Si TFT liquid crystal display with peripheral integrated circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.731-735
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• 2002

Electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure on the poly［4- (fluorocinnamate) phenylmaleimide](PFCPMI) surfaces using a new photodimerization method were investigated. For a new UVLPH (UV linearly polarized during heating) photodimerization method, the photopolymer layers were exposed by linearly polarized UV dichroic polarizer without a specific UV filter during heating at $150^{\circ}C$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN-LCD with UV exposure on the PFCPMI surface for 10 min using the UVLPH photodimerization method was observed. For response time measurement, the transmittance characteristics of the photoaligned TN-LCD using the UVLPH photodimerization method on the photopolymer surface was better than that of the photoaligned TN-LCD using the UVLP photodimerization method under a room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.770-775
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• 2000

A new photo-polymer material of the copoly (PM4Ch-ChMA), copoly (poly (4-methacryloyloxy)chalcone-cholesteryl methacrylate) for homeotropic alignment was synthesized and the electro-optical (EO) performance for the photo-aligned vertical-aligned (VA)-LC display (LCD) was studied. Good thermal stabilities of synthesized copolymer were obtained by TGA(Thermogravimetric Analysis) measurement. Good voltage-transmittance (V-T) and response time characteristics for the photo-aligned VA-LCD with polarized UV exposure in oblique direction($\theta$$_{i}$=30$^{\circ}$) on a copolymer-1 (2%) surfaces for 1 min were observed. but, light leakage in the off-state was observed. Therefore, we achieved excellent V-T and response time characteristics for the photo-aligned VA-LCD with UV exposure on a copolymer-3 (30%) surfaces for 3 min.n.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.