• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.486-489
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• 2002

In this paper, we have investigated characteristics of sub-50nm double gate MOSFET. From I-V characteristics, we obtained =510$\mu$A/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V. Then, the transconductance is 111$\mu$A/V, subthreshold slope is 86mV/dec and DIBL (Drain Induced Barrier Lowering) is 51.3mV. Also, we have presented that TCAD simulator is suitable for device simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Journal of Biosystems Engineering
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• v.3 no.1
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• pp.1-19
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• 1978

Power tiller is a major unit of agricultural machinery being used on farms in Korea. About 180.000 units are introduced by 1977 and the demand for power tiller is continuously increasing as the farm mechanization progress. Major farming operations done by power tiller are the tillage, pumping, spraying, threshing, and hauling by exchanging the corresponding implements. In addition to their use on a relatively mild slope ground at present, it is also expected that many of power tillers could be operated on much inclined land to be developed by upland enlargement programmed. Therefore, research should be undertaken to solve many problems related to an effective untilization of power tillers on slope ground. The major objective of this study was to find out the travelling and tractive characteristics of power tillers being operated on general slope ground.In order to find out the critical travelling velocity and stability limit of slope ground for the side sliding and the dynamic side overturn of the tiller and tiller-trailer system, the mathematical model was developed based on a simplified physical model. The results analyzed through the model may be summarized as follows; (1) In case of no collision with an obstacle on ground, the equation of the dynamic side overturn developed was: $$\sum_n^{i=1}W_ia_s(cos\alpha cos\phi-{\frac {C_1V^2sin\phi}{gRcos\beta})-I_{AB}\frac {v^2}{Rr}}=0$$ In case of collision with an obstacle on ground, the equation was: $$\sum_n^{i=1}W_ia_s\{cos\alpha(1-sin\phi_1)-{\frac {C_1V^2sin\phi}{gRcos\beta}\}-\frac {1}{2}I_{TP} \( {\frac {2kV_2} {d_1+d_2}\)-I_{AB}{\frac{V^2}{Rr}} \( \frac {\pi}{2}-\frac {\pi}{180}\phi_2 \} = 0 $$ (2) As the angle of steering direction was increased, the critical travelling veloc\ulcornerities of side sliding and dynamic side overturn were decreased. (3) The critical travelling velocity was influenced by both the side slope angle .and the direct angle. In case of no collision with an obstacle, the critical velocity $V_c$ was 2.76-4.83m/sec at $\alpha=0^\circ$, $\beta=20^\circ$ ; and in case of collision with an obstacle, the critical velocity $V_{cc}$ was 1.39-1.5m/sec at $\alpha=0^\circ$, $\beta=20^\circ$ (4) In case of no collision with an obstacle, the dynamic side overturn was stimu\ulcornerlated by the carrying load but in case of collision with an obstacle, the danger of the dynamic side overturn was decreased by the carrying load. (5) When the system travels downward with the first set of high speed the limit {)f slope angle of side sliding was $\beta=5^\circ-10^\circ$ and when travels upward with the first set of high speed, the limit of angle of side sliding was $\beta=10^\circ-17.4^\circ$ (6) In case of running downward with the first set of high speed and collision with an obstacle, the limit of slope angle of the dynamic side overturn was = $12^\circ-17^\circ$ and in case of running upward with the first set of high speed and collision <>f upper wheels with an obstacle, the limit of slope angle of dynamic side overturn collision of upper wheels against an obstacle was $\beta=22^\circ-33^\circ$ at $\alpha=0^\circ -17.4^\circ$, respectively. (7) In case of running up and downward with the first set of high speed and no collision with an obstacle, the limit of slope angle of dynamic side overturn was $\beta=30^\circ-35^\circ$ (8) When the power tiller without implement attached travels up and down on the general slope ground with first set of high speed, the limit of slope angle of dynamic side overturn was $\beta=32^\circ-39^\circ$ in case of no collision with an obstacle, and $\beta=11^\circ-22^\circ$ in case of collision with an obstacle, respectively.

• Journal of Korea Water Resources Association
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• v.51 no.8
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• pp.729-737
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• 2018

This study investigates the sediment processes the Improved-pneumatic-movable weir through laboratory experiments considering changing channel slopes. Experimental results show that the delta migrates towards the weir and the delta height increases as time passes. Moreover, as the delta approaches the weir, the delta migration speed decreases. As the dimensionless delta location increases, the effective height of dimensionless delta and the dimensionless reservoir capacity increases. Therefore, under the same slope conditions, the sediment deposition volume of the delta is small as the channel slope is mild. This means that the channel slope affects the development of the delta in the upstream of the Improved-pneumatic-movable weir. At the beginning of the experiment, the foreset slope is mild. However, the foreset slope of the delta increases with water depth as the delta migrates downstream. Moreover, as the slope is mild, the ratio of delta front length to delta height is close to 1, and the dimensionless delta height and the dimensionless delta migration speed decrease. As the delta height increases, the water depth, the velocity approaching to the weir and the delta migration speed decrease.

• Journal of The Korean Astronomical Society
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• v.43 no.5
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• pp.141-152
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• 2010

UBV I CCD photometry is obtained for the open clusters NGC 4609 and Hogg 15 in Crux. For NGC 4609, CCD data are presented for the first time. From new photometry we derive the reddening, distance modulus and age of each cluster - NGC 4609 : E(B-V ) = $0.37{\pm}0.03$, $V_0-M_V=10.60{\pm}0.08$, log $\tau$= 7.7 $\pm$ 0.1; Hogg 15 : E(B - V ) = 1.13 $\pm$ 0.11, $V_0-M_V$ = 12.50 $\pm$ 0.15, log $\tau$ $\lesssim$ 6.6. The young age of Hogg 15 strongly implies that WR 47 is a member of the cluster. We also determine the mass function of these clusters and obtain a slope $\Gamma$ = -1.2 ($\pm$0.3) for NGC 4609 which is normal and a somewhat shallow slope (${\Gamma}=-0.95{\pm}0.5$) for Hogg 15.

• Journal of IKEEE
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• v.23 no.2
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• pp.704-709
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• 2019

In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

• ETRI Journal
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• v.11 no.2
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.5
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• pp.477-484
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• 1997

Intracellular recordings of oscillatory firing (bursting activity) were obtained from Purkinje cells (PCs) in rat cerebellar slices. Apamin inhibited post-burst hyperpolarizations (PBHs) progressively and finally terminated oscillatory firing activity of PCs. Apamin did not affect the amplitude or duration of the after-hyperpolarization (AHP) between spikes within the burst. In the voltage clamp mode, apamin shifted the whole-cell, quasi-steady state I/V relationship in an inward direction and abolished the zero slope resistance (ZSR) region by blocking outward current. Nickel ($Ni^{2+}$) terminated oscillatory activity and also abolished the ZSR region. However, $Ni^{2+}$ did not have progressive blocking action on the post-burst hyperpolarization before it blocked oscillatory activity. $Ni^{2+}$ blocked an inward current at potentials positive to approximately -65 mV, which was responsible for the ZSR region and outward current at more negative potentials. These data indicated that oscillatory activity of PCs is sustained by a balance between a slow $Ni^{2+}$-sensitive inward current and an apamin-sensitive outward current in the region of ZSR of the whole-cell I/V curve.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.263-268
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• 2003

In this paper, we have investigated double gate (DG) MOSFET structure, which has main gate (NG) and two side gates (SG). We know that optimum side gate voltage for each side gate length is about 3V in the main gate 50nm. Also, we know that optimum side gate length for each for main gate length is about 70nm. DG MOSFET shows a small threshold voltage roll-off. From the I-V characteristics, we obtained IDsat=550$mutextrm{A}$/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V for DG MOSFET with the main gate length of 50nm and the side gate length of 70nm. The subthreshold slope is 86.2㎷/decade, transconductance is 114$mutextrm{A}$/${\mu}{\textrm}{m}$ and DIBL (Drain Induced Barrier Lowering) is 43.37㎷. Then, we have investigated the advantage of this structure for the application to multi-input NAND gate logic. Then, we have obtained very high cut-off frequency of 41.4GHz in the DG MOSFET.