• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.87-89
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• 2001

The structure of manufactured device is Cr-Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from -2[V] to +2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.679-680
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• 2006

Various different types of joining between High Tc superconducting(HTS) tapes were prepared and current-voltage(I-V) characteristic curves were investigated at 77 K, liquid nitrogen temperature. Two typos of HTS tapes wore used, one is no laminated tape(Sumitomo high strength type tape) and the other stainless steel laminated tape(AMSC(American Superconductors Inc.) 3ply tapes) Sample joints were lap-jointed with indium or solder. Joint resistances between Sumitomo tapes with 4-10 mm in length were estimated from I-V curves and in the range of $4-8n{\Omega}$ at 77 K. Joint resistances of AMSC tapes were in the range of $140-170n{\Omega}$, much higher than them of Sumitomo samples. The n-values of jointed HTS tapes were 50% of them with no joint. In AMSC tapes, indium is better than solder as the jointing material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.546-549
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1966-1967
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• 2007

Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.194-199
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• 1997

When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.105-109
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• 2002

A TVS and Varistor are preservative equipment against electro static discharge(ESD). We use a TVS for I/O protection of a circuit which has faster response time than a Varistor. And a Varistor has large power capability, therefore, which be used in input stage for internal pressure prevention. This paper will compare a TVS with a Varistor with respect to response characteristic to ESD in DC 24[V] low voltage circuit.

• Journal of IKEEE
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• v.20 no.3
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• pp.295-298
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• 2016

In this paper, we analysed the properties of the conventional ESD protection devices such as SCR, MVSCR, LVTSCR. The electrical characteristics and the turn-on time properties are simulated by Synopsys T-CAD simulator. As the results, the devices have the holding voltages between 2V and 3V, and the trigger voltage of about 20V with SCR, of about 12V with MVSCR, of about 9V with LVTSCR. The results of the simulation for the turn-on time properties are 2.8ns of SCR, 2.2ns of MVSCR, 2.0ns of LVTSCR. Thus, we prove that LVTSCR has the shortest turn-on time. However, the second breakdown currents(It2) of the devices are 7.7A of SCR, 5.5A of MVSCR, 4A of LVTSCR. This different properties have to be adapted by the operation voltages for I/O Clamps.