• Journal of Astronomy and Space Sciences
• /
• v.18 no.2
• /
• pp.109-118
• /
• 2001

KITSAT-1, launched in 1992, passes through Inner Van Allen Radiation Belt in which high energy Protons cause single event upsets(SBUs) in the main memory of KITSAT-1 OBC(On-Board Computer) 186. The present paper compares SEU data from the OBC186 with the AP-8 model of NASA/NSSDC using the Chi-Square method to estimate the SEU threshold energy. Shielding effect by the satellite body has been taken into account to model the proton fluxes at the position of OBC186, and SEUs recorded during the high solar activities have been removed to avoid the spurious result. The result shows that the SEU threshold energy of the main memory of KITSAT-1 OBC186 is estimated to be about $110{pm}10MeV$.

• Korean Journal of Materials Research
• /
• v.4 no.5
• /
• pp.493-501
• /
• 1994

DSC와 XRD를 사용하여 Zr/Si 다층박막의 고상반응에 의한 비정질상과 결정상 생성 및 상전이를 확인하고 이를 유효구동력 개념과 유효생성열 개념 및 phase determining factor(PDF)모델을 이용하여 예측한 결과와 비교하였다. Zr/Si 다층박막은 비정질호 반응이 잘 일어났으며 이는 유효구동력 개념으로 예측한 바와 일치하였다. Zr/Si 계에서 생성되는 최초의 결정상은 ZrSi 였으며 유효생성열과 PDF모델로부터 예측된 최초의 결정상은 PDF 모델의 예측 결과와 일치하였다. Zr/Si 다층박막의 원자조성비가 1대 1일경우와 1대 2일 경우의상전이는 ZrSi$\longrightarrow$$ZrSi_{2}$로 되었으며 이러한 상전이 과정은 유효생성열 다이아그램으로 해석되었다. ZrSi의 생성기구는 핵생성이 율속임을 규명하였고 ZrSi와 $ZrSi_{2}$의 생성에 필요한 활성화에너지는 1.64$\pm$0.19eV와 2.28$\pm$0.36eV이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.426-426
• /
• 2008

ZnO 박막과 Al이 도핑된 ZnO 다결정질 박막을 rf magnetron sputtering 방법을 이용하여 Si(100) 기판과 코닝글라스 기판에 증착하여 박막의 광학적 특성을 Spectro-scopic Ellipsometry (SE, Woollam사)와 UV-VIR-NIR Sphectrophotometry (SP, Varian사)를 사용하여 분석하였다. SE 측정은 입사각도 55도에서 75도까지 5도 간격으로 파장범위 250 - 1700 nm 에서 3 nm 간격으로 측정하였으며, SP 측정은 수직입사로 250-3000 nm 파장범위에서 1 nm 간격으로 투과도와 반사도를 측정하였다. 측정된 데이터들은 Lorentz Oscillator 모델과 Drude free electron 모델이 결합된 분산관계식을 사용하여 전산 맞춤을 하여 분석하였다. ZnO 박막의 optical band gap energy 는 3.3 eV로 측정되었으며, Al 도핑에 따른 자유전하농도가 증가에 의하여 Burstein-Moss 효과에 따르는 optical band gap energy의 증가 거동을 보였다. 또한 자유전하농도 증가에 따라 band edge 부근에서 나타나는 excitonic transition 에 기인하는 유전함수 피크의 broadening이 관찰되었으며, high frequency dielectric constant는 자유 전하농도에 관계없이 3.689${\pm}$0.05 eV 의 값을 가졌다. Drude free electron 모델을 사용하여 plasma frequency를 구하고 이로부터 얻어진 optical mobility 와 Hall mobility를 비교하여 ZnO계 다결정질 박막에서의 결정립계가 이동도에 미치는 영향을 고찰하고자 한다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.3
• /
• pp.6-21
• /
• 2008

We have investigated the effect of the forward and reverse ESD pulse accumulation on the development of the oxide VCSEL's electrical and optical characteristics. The forward ESD-induced degradation is complicated, showing three degradation phases with increasing ESD voltage while the reverse ESD-induced degradation is divided by a sudden distinctive change in elecorl-optical characteristics. By comparing the measured L-I-V characteristics and their derivatives with the fitted characteristics using an equivalent circuit model as well as the large signal circuit model, the development of the oxide VCSEL's electro-optical characteristics under forward and reverse ESD conditions has been fully understood.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.8
• /
• pp.555-559
• /
• 2003

In this paper, a new CMOS RF model for RF IC design including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for tile first time for accurately predicting the RF behavior of CMOS devices. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled with a parallel branch added in equivalent circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3. the proposed RF model shows good agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2017.05a
• /
• pp.930-932
• /
• 2017

In this paper, prediction of progressive interlaminar fracture in curved composite laminates under mode I loading was described. The prediction of progressive interlaminar fracture in curved composite laminates was conducted using cohesive zone model(CZM) in ABAQUS V6.13. Interlaminar fracture toughness used as input parameters in CZM was obtained through mode I, mode II and mixed mode I/II tests. The behaviors of progressive interlaminar fracture for curved composite laminates showed a good agreement between experimental and numerical results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.887-890
• /
• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of KIISE:Computer Systems and Theory
• /
• v.26 no.10
• /
• pp.1258-1263
• /
• 1999

본 논문에서는 CRCW(Concurrent Read Concurrent Write)와 CREW(Concurrent Read Exclusive Write) PRAM(Parallel Random Access Machine) 모델에서 무방향성 그래프 G=(V, E)의 극대 매칭을 구하기 위해 간결한 랜덤 병렬 알고리즘을 제안한다. CRCW PRAM 모델에서 m개의 선을 가진 그래프에 대해, 제안된 매칭 알고리즘은 m개의 프로세서 상에서 {{{{ OMICRON (log m)의 기대 수행 시간을 가진다. 또한 CRCW 알고리즘을 CREW PRAM 모델에서 구현한 CREW 알고리즘은 OMICRON (log^2 m)의 기대 수행 시간을 가지지만,OMICRON (m/logm) 개의 프로세서만을 가지고 수행될 수 있다.Abstract This paper presents simple randomized parallel algorithms for finding a maximal matching in an undirected graph G=(V, E) for the CRCW and CREW PRAM models. The algorithm for the CRCW model has {{{{ OMICRON (log m) expected running time using m processors, where m is the number of edges in G We also show that the CRCW algorithm can be implemented on a CREW PRAM. The CREW algorithm runs in {{{{ OMICRON (log^2 m) expected time, but it requires only OMICRON (m / log m) processors.

• Journal of Astronomy and Space Sciences
• /
• v.22 no.3
• /
• pp.223-232
• /
• 2005

New BVR CCD light curves of the low mass ratio contact binaries, V410 Aur and V776 Cas, were observed with the 61 cm reflector and a 2K CCD camera at the Sobaeksan Astronomical Observatory. The absolute dimensions of the low mass ratio contact binaries, V410 Aur and V776 Cas, were obtained using WD program from the published spectroscopic and newly observed photometric data. The evolutionary status of this type of binary system including V410 Aur and V776 Cas has been considered. We reconfirmed that the primary stars of the low mass contact binary system were located on the TAMS and secondary stars were located under the ZAMS in H-R diagram.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2010.05a
• /
• pp.291-292
• /
• 2010