• 대한한의학원전학회지
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• 제30권2호
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• pp.83-98
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• 2017

Objectives : The paper's objective is to study into the books dealing in the debate surrounding the existence, or nonexistence, of urinary bladder's upper gate and lower gate, a debate that ensured since the publication of Huangdineijing. Methods : Sikuquanshu and Zhongyishijia databases were searched to collect related materials, and these materials were reviewed to get an understanding of the historical development of the debate. Results : The upper gates of urinary bladder was first mentioned in Nanjing. Since then, Wanglu's Yijingsuhuiji asserted that the upper gate exists while the lower didn't, but many argued after the dawning of Ming Dynasty that the upper doesn't exist while the lower does. Additionally, some urged in relation to the assertion of the nonexistence of upper gate that water liquid pervades into the urinary bladder through sebaceous membrane or oil net. Conclusions : Behind the debate between the existence or nonexistence of the upper and lower gates in urinary bladder is the theory of qi transformation. Even the anatomical knowledge of urinary bladder was submitted as an evidence. In general, the debate developed depending on how the differences between Huangdineijing's osmotic opinion and Nanjing's existence of the upper gate were perceived.

• 건축역사연구
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• 제19권2호
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• pp.117-132
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• 2010

The Great south gate of Seoul Castle, Sung-Rye-Mun, the east gate of Seoul Castle, Hung-In-Ji-Mun, the south gate of Hwa-Sung Castle, Pal-Dal-Mun and the north gate of Hwa-Sung Castle, Jang-An-Mun are typical significant castle gate of Chosun Dynasty. They have a lot in common with exterior. Additionally there are also something common in dimensions. At first, the arch dimensions of lower story is very similar and the columns of upper story are the regular intervals. Purpose of this study is to confirm similarities above mentioned were intended on purpose and if then what was the reason. The results of this study were described separately as follows. 1. The widths of the arches were based on each 16Cheok and 18Cheok. 2. The heights of the arches followed less strictly rule than the widths. 3. The widths of the arches, 16Cheok was same size as width of middle-size road (中路, Jung-Ro) inside the Castle town in Chosun Dynasty. 4. The widths of the arches, 16Cheok was the standard size of exit went through castle and then the standard size of road arrived at one's destination. 5. The widths of the arches had an effect on the intervals between the columns of the upper story. Finally we recognized that in Chos${\u{o}}$n Dynasty the widths of the gate arches in Seoul castle and Hwa-Sung castle had relevance to the city planning largely and widths of the gate arches had an effect on the intervals between the columns of the upper story partly.

• 한국진공학회지
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• 제5권4호
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• pp.327-332
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• 1996

Tungsten(W) polycide gate 구조에서 $WSi_x$의 두께가 증가하면 열처리 공정 후 Gate oxide의 두께가 증가하며, 전기적 신뢰도가 열화 되는 현상이 발생한다. 이러한 특성 열화를 일으키는 지배적인 요인은 $WSi_x$ 증착 공정 중 유입되어 후속 열 공정에 의하여 gate oxide로 환산되는 fluorine인 것으로 밝혀졌다. 이러한 현상을 규명하기 위하여 fluorine ion implantation된 poly Si과의 특성을 비교하였으며, SIMS 및 단면 TEM을 이용한 미세 구조 연구를 실시하였다. 그러나 $WSi_x$의 두께가 600$\AA$ 이상부터는이러한 특성 열화가 포화되는 현상이 관찰되었다. 600$\AA$ 이상의 $WSi_x$ 두께에서는 미세 구조가 표면이 거칠고, porous한 phase로 구성된 상부 구조와 비교적 dense하고, 매끈한 계면 상태를 갖는 하부 구조로 이루어졌으며, porous한 표면 부위는 후속 열공정 중 oxygen-rich한 phase로 변하여 fluorine을 포획하여 oxide로의 확산을 억제하여 특성 열화가 포화되는 것으로 해석되었다.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• 한국산학기술학회논문지
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• 제16권7호
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• pp.4411-4417
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• 2015

플라스틱 제품의 사출금형을 위한 게이트 위치의 최적 설계는 다양한 설계에 대한 3차원 사출성형 분석으로 도출할 수 있다. 이 논문은 사출금형에서 게이트 위치의 영향에 관한 연구이다. 게이트 위치는 플라스틱 제품의 생산성과 품질에 결정적인 영향을 미친다. 논문의 목적은 사출기를 사용한 자동차 에어 클리너 상부커버의 제조과정 중에 수지충전, 웰드라인, 사출압력에 대한 게이트의 영향을 분석하기 위한 것이다. 따라서 이 논문에서 이러한 문제들을 분석하기 위한 게이트의 위치는 4가지 경우로 변화를 주었다. 논문에서 각각의 게이트 위치 변화를 고려한 CAE 시뮬레이션은 사출금형공정에서 제품에 나타나는 결함의 원인을 예견하기 위하여 수행되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권1호
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• 한국산학기술학회논문지
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• 제12권11호
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• pp.4738-4744
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• 2011

본 연구는 상부에 설치되는 콘크리트 구조물 없이 설치되어 작동하는 새로운 소형 수문 시스템을 제안하였다. 주요 메커니즘은 유압시스템, 수문 상하 이송 메커니즘, 수문 잠금 제어장치, 이물질이 감지되면 수문이 파손되지 않도록 하는 안전장치 등으로 구성하였다. 유압 펌프 및 제어 시스템은 수문 시스템의 위치에서 떨어진 장소에 설치하여 상부 구조물을 제거할 수 있도록 하여 제어 하였다. 수문 인양 장치는 유압 액추에이터가 달린 래크와 피니언이 측면에 설치되어 작동되며 그 결과 제품의 원가 절감, 작동시 안전성 확보 및 제품의 컴팩트화를 구현하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 A
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• pp.325-327
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• 1995

A new gate drive circuit of classic converter for a switched reluctance motor is presented. Conventional gate drive circuit usually consists of the isolated power supplies and signal transferring devices for isolation, such as photo coupler, pulse transformer, and gate drive chips. The proposed gate drive circuit consists of resistors, capacitors, and zenor diodes without isolated power supplies, that make the drive circuit simple and reduce the material cost. The operational modes are classified and analyzed. The characteristics of the phase current and the gate signal of upper switches is investigated with the variation of duty ratio through the experiments.

• 한국정보통신학회논문지
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• 제8권4호
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• pp.821-825
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• 2004

본 연구는 에치스토퍼를 기존의 방식과 다르게 적용하여 수소화 된 비정질 실리콘 박막 트랜지스터의 제조공정을 단순화하고, 박막 트랜지스터의 게이트와 소오스-드레인간의 기생용량을 줄인다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층 , 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si：H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si：H 층을 식각하고, 남아있는 NPR층을 제거한다. 그 위에 Cr층을 증착한 후 패터닝하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 이렇게 제조하면 기존의 박막 트랜지스터에 비하여 특성은 같고, 제조공정은 줄어들며, 또한 게이트와 소오스-드레인간의 기생용량이 줄어들어 동작속도를 개선시킬 수 있다.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.