• Title/Summary/Keyword: Uniform Current Distribution

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Fabrication and Characterization of AlGaAs/GaAs HBT (AlGaAs/GaAs HBT의 제작과 특성연구)

  • 박성호;최인훈;오응기;최성우;박문평;윤형섭;이해권;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.104-113
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    • 1994
  • We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

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Impact of axial power distribution on thermal-hydraulic characteristics for thermionic reactor

  • Dai, Zhiwen;Wang, Chenglong;Zhang, Dalin;Tian, Wenxi;Qiu, Suizheng;Su, G.H.
    • Nuclear Engineering and Technology
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    • v.53 no.12
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    • pp.3910-3917
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    • 2021
  • Reactor fuel's power distribution plays a vital role in designing the new generation thermionic Space Reactor Power Systems (SRPS). In this paper, the 1/12th SPACE-R's full reactor core was numerically analyzed with two kinds of different axial power distribution, to identify their impacts on thermal-hydraulic and thermoelectric characteristics. In the benchmark study, the maximum error between numerical results and existing data or design values ranged from 0.2 to 2.2%. Four main conclusions were obtained in the numerical analysis: a) The axial power distribution has less impact on coolant temperature. b) Axial power distribution influenced the emitter temperature distribution a lot, when the core power was cosine distributed, the maximum temperature of the emitter was 194 K higher than that of the uniform power distribution. c) Comparing to the cosine axial power distribution, the uniform axial power distribution would make the maximum temperature in each component of the reactor core much lower, reducing the requirements for core fuel material. d) Voltage and current distribution were similar to the axial electrode temperature distribution, and the axial power distribution has little effect on the output power.

Uniform Side Illumination Generated from LEDs Arranged by an Annealing Algorithm

  • Wang, Xu;Lei, Panling;Qian, Chaoyi;Wang, Zhiping;Xu, Xuefen;Su, Zhouping
    • Current Optics and Photonics
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    • v.6 no.3
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    • pp.332-336
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    • 2022
  • Given a cubic space, it is easy to uniformly illuminate the floor with light sources placed on top. However, little has been reported about uniform illumination on walls with the same configuration of light sources. Here we present a luminaire consisting of nine light-emitting diodes (LEDs) with perfect Lambertian distribution, placed on the top as a 3 × 3 rectangular LED array. The distances between LEDs and tilt angles of each individual LED are adjustable and optimized by an annealing algorithm. After optimization, the array produces a rectangular illumination pattern on one wall with a uniformity of about 89%. Analysis shows that the tilt angles of individual LEDs are key parameters for uniform side illumination. In a scenario that is more practical, the tilt angles of all the LEDs are set to be the same, only decreasing the uniformity to 83%.

Studies of Simultaneous Quench of Superconducting YBCO Flims for Fault Current Limiter Under the Influence of Magnetic Fields (자기장인가에 따른 YBCO 박막형 한류기의 동시?치 연구)

  • 박권배;이방욱;강종성;오일성;최효상;현옥배
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.1
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    • pp.84-88
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    • 2002
  • The resistive fault current limiter (SFCL) is a very attractive device for power networks. But it has a serious Problem in using YBCO films for fault current limiter is inhomogeneities caused by imperpect manufacturing. So simultaneous quenches are a difficult problem which elements for current limiting are connected in series for increasing voltage ratings. We investigated extended electric field-current characteristics for current limiting element of YBCO film when O-130mT magnetic field is applied. And quench characteristics were investigated in over all element and between elements of YBCO films. From the experiments, it was shown that applied magnetic fields using solenoid coil induced uniform quench distribution for over all stripes and simultaneous quench in all elements for current limiting of YBCO film was realized. We have achieved resistive fault current limiter of 1.2kV/20A rating using magnetic field.

A Study on Optimal Design of 100 V Class Super-junction Trench MOSFET (비균일 100V 급 초접합 트랜치 MOSFET 최적화 설계 연구)

  • Lho, Young Hwan
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.7
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    • pp.109-114
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    • 2013
  • Power MOSFET (metal-oxide semiconductor field-effect transistor) are widely used in power electronics applications, such as BLDC (Brushless Direct Current) motor and power module, etc. For the conventional power MOSFET device structure, there exists a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a non-uniform super-junction (SJ) trench MOSFET (TMOSFET) structure for an optimal design is proposed in this paper. It is required that the specific on-resistance of non-uniform SJ TMOSFET is less than that of uniform SJ TMOSFET under the same breakdown voltage. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The structure modelling of a unit cell, the characteristic analyses for doping density, and potential distribution are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the non-uniform SJ TMOSFET shows the better performance than the uniform SJ TMOSFET in the specific on-resistance at the class of 100V.

Milling Effects of $Y_2BaCuO_5$ Precursor Powder with $CeO_2$ Addition on the Critical Current Density of Liquid Infiltration Growth Processed $YBa_2Cu_3O_{7-y}$ Bulk Superconductors (액상 침투 성장법으로 제조된 $YBa_2Cu_3O_{7-y}$ 벌크 초전도체의 임계전류밀도에 대한 $CeO_2$ 첨가된 $Y_2BaCuO_5$ 분말의 밀링 효과)

  • Asif, Mahmood;Jun, Byung-Hyuk;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.12 no.1
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    • pp.6-11
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    • 2010
  • The milling effects of a precursor $Y_2BaCuO_5$ (Y211) powder having 1 wt.% $CeO_2$ on the microstructure and critical current density ($J_c$) of liquid infiltration growth (LIG) processed $YBa_2Cu_3O_{7-y}$ (Y-123) bulk superconductors were investigated. The microstructure analysis revealed that the Y211 size in the final Y-123 products decreased with increasing the milling time and a relatively high density and uniform distribution of Y211 inclusions were observed in the sample prepared using 8 h milled powder. However, the unexpected Y211 particles coarsening was observed from the 4 h milled sample which was further increased for 10 h milled sample. Critical current density ($J_c$) of the LIG processed Y-123 bulk superconductors was found to be dependent on the milling time of the Y211 precursor powder. The $J_c$ increased with the increase of milling time and reached up to a maximum at 8 h in the self field while 10 h milled sample showed lower $J_c$ at the same field which might be due to the exaggerated growth and non-uniform distribution of Y211 particles.

Thickness Control of Electroplating Layer for Copper Pillar Tin Bump (구리기둥범프 용 전해도금 층 제어)

  • Moon, Dae-Ho;Hong, Sang-Jeen;Park, Jong-Dae;Hwang, Jae-Ryong;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.903-906
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    • 2011
  • The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

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Quench Behaviors of Superconducting YBCO Films for Fault Current Limiter Using Magnetic Fields (자기장이 인가된 YBCO 박막형 한류기의 ?치 특성)

  • 박권배;이방욱;강종성;오일성;최효상;현옥배
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.365-367
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    • 2002
  • A serious problem in using YBCO films for fault current limiter is inhomogeneities caused by imperpect manufacturing. So simultaneous quenches are a difficult problem which elements for current limiting are connected in series for increasing voltage ratings. We investigated extended electric field - current characteristics for current limiting element of YBCO film when 0-130mT magnetic field is applied. And quench characteristics were investigated in over all element and between elements of YBCO films. From the experiments, it was shown that applied magnetic fields using solenoid coil induced uniform quench distribution for over all stripes and simultaneous quench in all elements for current limiting of YBCO film was realized.

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Analysis of 3-Dimensional Current Flow by n-electrode Pattern Shape in GaN-based Vertical LED (수직형구조 GaN계 발광다이오드에서 전극구조 모양에 따른 3차원 전류분포 해석)

  • Yun, Ju-Seon;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.231-232
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    • 2008
  • The effect of n-electrode patterns on the current distribution in active region is investigated in GaN-based blue vertical light emitting diodes (VLEDs). A 3-dimension circuit model is adopted to analyze the current flow patterns in VLEDs. We had fabricated VLEDs having different n-electrode patterns, measured their current-voltage characteristics, and compared to the numerical simulation. It turns out that the current spreading in VLEDs is strongly dependent on the n-electrode pattern. Some design guidelines for n-electrode patterns to produce uniform current injection are presented.

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Relationship of the Distribution Thickness of Dielectric Layer on the Nano-Tip Apex and Distribution of Emitted Electrons

  • Al-Qudah, Ala'a M.;Mousa, Marwan S.
    • Applied Microscopy
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    • v.46 no.3
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    • pp.155-159
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    • 2016
  • This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.