• 한국ITS학회:학술대회논문집
• /
• 2008.11a
• /
• pp.181-184
• /
• 2008

• ETRI Journal
• /
• v.29 no.4
• /
• pp.437-444
• /
• 2007

A CMOS frequency synthesizer block for multi-band orthogonal frequency division multiplexing ultra-wideband systems is proposed. The proposed frequency synthesizer adopts a double-conversion architecture for simplicity and to mitigate spur suppression requirements for out-of-band interferers in 2.4 and 5 GHz bands. Moreover, the frequency synthesizer can consist of the fewest nonlinear components, such as divide-by-Ns and a mixer with the proposed frequency plan, leading to the generation of less spurs. To evaluate the feasibility of the proposed idea, the frequency synthesizer block is implemented in 0.18-${\mu}m$ CMOS technology. The measured sideband suppression ratio is about 32 dBc, and the phase noise is -105 dBc/Hz at an offset of 1 MHz. The fabricated chip consumes 17.6 mA from a 1.8 V supply, and the die-area including pads is $0.9{\times}1.1\;mm^2$.

• Proceedings of the KIEE Conference
• /
• 2006.10c
• /
• pp.482-484
• /
• 2006

This paper describes fast-hopping frequency synthesizers for multi-band OFDM(MB-OFDM) ultra-wide band(UWB) systems. Three different structures in generating 3 center frequencies(3432MHz, 3960MHz, 4488MHz) are designed and compared. The first structure generates 3 center frequencies using only one PLL operating at 4224MHz. The second uses three PLLs operating at corresponding center frequencies. The third employes two PLLs operating at 3960MHz and 528MHz. Simulation results using a 0.18um RF CMOS process parameters show that the third structure exhibit the best characteristics. The band switching time of the proposed synthesizer is less than 1.3ns and the spur is less than -36dBc. The synthesizer consumes 22mA from a 1.8V supply.

• Journal of electromagnetic engineering and science
• /
• v.8 no.1
• /
• pp.34-39
• /
• 2008

An RF front-end dual-conversion receiver for $3{\sim}5\;GHz$ MB-OFDM UWB systems is implemented in $0.18\;{\mu}m$ CMOS technology. The receiver includes a two-stage UWB LNA, an RF mixer, an IF I/Q mixer, and a frequency synthesizer. The proposed receiver adopts the dual-conversion architecture to mitigate the burden of design of the frequency synthesizer. Accordingly, the proposed frequency synthesizer generates four LO tones from only one VCO. The receiver front-end achieves power gain of 16.3 to 21 dB, NF of 7 to 7.6 dB over $3{\sim}5\;GHz$, and IIP3 of -21 dBm, while consuming 190 mW from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.8
• /
• pp.64-72
• /
• 2010

This paper presents a wide range VCO with fine coarse tuning step using a sigma-delta modulation technique for UWB frequency synthesizer. The proposed coarse tuning scheme provides the low effective frequency resolution without any degradation of phase noise performance. With three steps coarse tuning, the VCO has wide tuning range and fine tuning step simultaneously. The frequency synthesizer with VCO was implemented with 0.13 ${\mu}m$ CMOS technology. The tuning range of the VCO is 5.8 GHz~6.8 GHz with the effective frequency resolution of 3.9 kHz. It achieves the measured phase noise of -108 dBc/Hz at 1 MHz offset and a tuning range 16.8 % with 5.9 mW power. The figure-of-merit with the tuning range is -181.5 dBc/Hz.

• 전자공학회논문지 IE
• /
• v.45 no.4
• /
• pp.1-6
• /
• 2008

A fast-hopping frequency synthesizer that reduces complexity and power consumption is presented for MB-OFDM UWB applications. The proposed architecture uses 3960 MHz LC VCO, 528 MHz ring oscillator, passive mixer and LC-tuned Q-enhancement BPF to generate Band Group 1 frequencies. The adjacent channel rejection ratio is less than -40 dBc for 3432 MHz and -H dBc for 4488 MHz. A fast switching SCL-tpre MUX is used to produce the required channel output signal and it takes less than 2.2 ns for band switching. The total power consumption is 47.9 mW from a 1.8 V supply.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.2
• /
• pp.134-139
• /
• 2013

This paper describes design of a RF frequency synthesizer for the MBOA UWB systems with $0.13{\mu}m$ silicon CMOS technology. To generate effective clock signal of the MBOA novel technique which uses large scale multiplication in band of low frequency and small scale multiplication in band of high frequency has been used to reduce oscillation bandwidth of VCO. To get good performance of high speed and wide band operation characteristics a VCO using PMOS core structure and a frequency divider using super dynamic structure used in design of PLL circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.8
• /
• pp.117-124
• /
• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.12
• /
• pp.2264-2270
• /
• 2006

This paper describes fast-hewing frequency synthesizers for multi-band OFDM(MB-OFDM) ultra-wide band(UWB) systems. Three different structures in generating 3 center frequencies(3432MHz, 3960MHz, 4488MHz) are designed and compared. The first structure generates 3 center frequencies using only one PLL operating at 4224MHz, and the second uses three PLLs operating at corresponding center frequencies. The proposed third structure employes two PLLs operating at 3960MHz and 528MHz. Simulation results using 0.18um RF CMOS process parameters show that the third structure exhibits boner characteristics in spur, area and current consumption than the other structures. The band switching time of the proposed synthesizer is less than 1.In and the spur is less than -36dBc. The synthesizer consumes 22mA from a 1.8V supply.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.202-207
• /
• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.