• 제어로봇시스템학회논문지
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• 제10권7호
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• pp.604-610
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• 한국재료학회지
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• 제21권5호
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• 한국세라믹학회지
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• 제40권2호
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• pp.153-158
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• 2003

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 강유전성 메모리소자의 산화물 전극재료로 사용되고 있는 La$_{0.5}$Sr$_{0.5}$CoO$_3$(LSCO)극 photosensitive sol solution을 이용하여 spin coating법으로 제조하였으며 출발원료는 La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide를 사용하였다. LSCO gel 박막에 UV 노광시간을 증가시킴에 따라 M(metal)-O-M 결합이 생성되면서 metal $\beta$-diketonate의 UV 흡수 피크 강도는 감소되었고 LSCO gel 박막에 UV조사에 따른 용해도 차이가 생기면서 fine patterning 을 얻을 수 있었다. 68$0^{\circ}C$ 이상의 온도로 대기 중에서 열처리된 LSCO 박막은 perovskite 상을 나타내었고 74$0^{\circ}C$에서 가장 낮은 비저항값(4$\times$10￣$^3$Ωcm)을 얻을 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.100.1-100.1
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• 2007

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.300-305
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• 2015

$WO_3$, $SiO_2$, and $TiO_2$ films with hydrophilic property are deposited by rf-magnetron sputtering. Their wettability is strongly depends on the presence or absence of the oxygen plasma etching on the glass substrates. The $TiO_2$ film of 50 nm-thick on the plasma etched glass shows a water contact angle (WCA) below $5^{\circ}$ which means a super-hydrophilic surface. However, WCA values are gradually degraded when the films are exposed under atmosphere, especially $WO_3$. In order to improve hydrophilic property, the degraded films can be again recovered by UV illumination for 10 sec using UV-light and the $TiO_2$ film shows a super-hydrophilic surface about $3^{\circ}$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1489-1492
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• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• 한국안광학회지
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• 제17권2호
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• pp.119-126
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• 2012

목적: 안경 렌즈 코팅 막을 불화수소산을 이용하여 상온에서 단시간 화학적으로 식각한 뒤 코팅 막과 렌즈 원재료의 변화를 살펴보고자 하였다. 방법: GRAY 70%로 염색된 vinyl ester계 고분자(Lens A)와 thiourethane계 고분자렌즈(Lens B)를 불화수소산을 이용해 5분, 10분 또는 15분 동안 식각한 뒤 재료의 기계적 물성과 하드코팅과 반사방지코팅 등 코팅 막의 손상 정도, 그리고 굴절률 광투과율 등 렌즈의 특성 변화를 관찰하였다. 결과: 두 재료 모두 식각 전과 후의 굴절력에는 큰 변화가 없었지만 반사방지코팅과 하드코팅이 차례로 제거되었고 렌즈 표면에도 손상을 주어 UV 투과율이 증가되었으며 기계적 물성은 소하였다. 화학적 식각으로 인한 렌즈의 물성 변화는 thiourethane계 고분자 렌즈에서 더 크게 나타났다. 결론: 고분자 재료의 특성에 따라 불화수소산에 대한 반응성이 다르기 때문에 식각에 따른 렌즈 자체의 물성 변화가 다르게 나타남을 알 수 있었다.

• 대한기계학회논문집A
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• 제32권2호
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• pp.143-147
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• 2008

Super-hydrophobic surfaces showed that contact angle of water was higher than 140 degrees. That surface could be made several methods such as Carbon nano tubes grown vertically, PDMS asperities arrays, hydrophobic fractal surfaces, and self assembled monolayers coated by CVD and so on. However, we fabricated super-hydrophobic surfaces with plasma treatments which were very cost efficient processes. Their surfaces were characterized by static contact angles, advancing, receding, and stability against UV irradiation. Optimal surfaces showed static contact angles were higher than 150 degrees. Super-hydrophobic property was remained after UV irradiation for one week.