• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.467-469
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• 2003

IEC(International Electrotechnical Commission) 62271-100 has been adopted for the design test of circuit breaker which is used as the main protecting device of power system. But, it is also necessary to separately receive the testing certificate in accordance with ANSI/IEEE standard for getting into the american market. Up to now, several domestic companies have completed the ANSI/IEEE testing in medium circuit breaker of distribution system, but they recently started the ANSI/IEEE testing in ultra high-voltage class of transmission and substation system. This paper introduces the testing techniques and its results for the making and breaking performance of 145kV, 40kA $SF_6$ gas circuit breaker which was firstly performed in KERI(Korea Electrotechnology Institute) by the ANSI/IEEE standard.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.610-612
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• 2003

Octanethiol ($CH_3(CH_2)_7SH$) based self-assembled monolayer on Cu(111) in ultra-high vacuum has been examined using x-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD), intergrated desorption mass spectrometry (IDMS), and contact angle analysis. The results show that the octanethiolate monolayers similar to those on gold are formed on Cu(111). The monolayers are stable up to temperatures of about 480 K. Above 495 K the monolayers decompose via the γ-hydrogen elimination mechanism to yield 1-octene in the gas phase. The thiolate head groups on the copper surface change to Cu₂S following the decomposition of hydrocarbon fragments in the monolayers at about 605 K.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.312-315
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• 2004

The monolayer of oxygen atoms sandwiched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multilayer Si-O structure forms a new type of superlattice, semiconductor-atomic superlattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (Ⅰ-Ⅴ) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.3
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• pp.73-76
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• 2003

In modern EHV (Extra High Voltage) class GCBs (Gas Circuit Breakers), the interruption capability for SLF (Short Line Fault) is one of the most important aspects of performance required for GCBs. Up to now, the SLF interruption capability of EHV class GCBs was partially assisted by the adoption of capacitors able to decrease the dV/dt of the TRV (Transient Recovery Voltage), particularly the TRV on the line side. This paper describes the technique to increase the SLF interruption capability of EHV class GCBs as well as the procedure to develop capacitorless l70kV 50kA GCB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.399-401
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• 2000

Recently polymer insulators are being used for outdoor high voltage applications. Polymer insulators for transmission and distribution line have significant advantages over porcelain and glass insulators, especially for ultra-high voltage(UHV) transmission lines. Their advantages are light weight, vandalism resistance and hydrophobicity. In this paper, polymer line post insulator has been designed and investigated electric field distribution by FEM. Designed LP insulators have been tested as insulator performance test, such as power frequency voltage test, lightning impulse voltage test, artificial pollution test and flexural load test.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2100-2102
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• 2005

In this Paper, there have been brief review about the important consideration in laboratory planning and designing the dielectric testing facilities for heavy electric apparatus up to 800kV-class in the high voltage testing fields. To improve and reinforce the existing dielectric test facilities in the way of econo-mical and optimal condition, wide investigation and an analysis for a solution, especially overshoot compensation method. have been suggested. With the brief description about those matters in constructing and improving the test facilities, the specification of each facility has been shown in the paper.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1513-1514
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• 2006

In this paper, there have been brief review about the important consideration in laboratory planning and construction of the artificial pollution testing facilities including 300 kV, 1800 kVA AC test system, which enable to lest and evaluate the UHV dielectric performance of power insulators up to transmission class. Also it is described simply about its trial running of the whole test system. To evaluate the performance characteristics against contamination for various power installation, especially for the insulators and kinds of bushings, brief investigation and an analysis of test objects and related international codes and standards have been conducted.

• Applied Microscopy
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• v.36 no.spc1
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• pp.25-33
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• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.653-656
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• 2014

$Cs_3Sb$ photocathode was formed by newly developed process and successive in-situ lighting devices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate, respectively. Major parameters such as brightness, power consumption, and efficacy were measured. The wavelength of LED excitation source was 450 nm. Both high power and low power modes were applied in the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. The results showed that $Cs_3Sb$ photocathode formed in atmospheric conditions was functioning as good as the photocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.