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Characteristics of Semiconductor-Atomic Superlattice for SOI Applications  

서용진 (대불대학교 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.6, 2004 , pp. 312-315 More about this Journal
Abstract
The monolayer of oxygen atoms sandwiched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multilayer Si-O structure forms a new type of superlattice, semiconductor-atomic superlattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (Ⅰ-Ⅴ) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.
Keywords
Si-O superlattice; HRTEM(high-resolution cross-sectional transmission electron microscopy); SOI( silicon - on-insulator); SAS(semiconductor-atomic superattice);
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