• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권2호
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• pp.55-62
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• 2005

The optical CT was developed to use twisted fibers for 170 kV GIS. The fiber sensor optimized on the optical CT was wound 3 turns and twisted 4 times per a turn at the pipe with a diameter of 130 mm. The measurement error for the linearity which was satisfied the criterion of 'IEC Class-1.0' was less than ± 0.44 % at the transmission type and ± 0.82 % at the reflection type to 2,000 A. At a low current to 200 A, the measurement error was ± 0.69% at the transmission type and ± 1.38 % at the reflection type.

• 한국재료학회지
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• 제9권2호
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• pp.195-198
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• 1999

The newly designed Ac-PDP(plasma display panel with comb-type electrode) structure was fabricated by using the screen printing method and the electrical and optical characteristics were measured under the various discharge conditions. The minimum firing voltages measured under pure Ne and Ne+Xe mixture gas with the application of 10 kHz square wave were 190V and 160V, respectively. The firing voltages of the PDP cell with the comb-type electrode were compared with those of the cell with matrix electrode under the same discharge condition. The firing voltage of the PDP cell with comb-type electrode was 15 V lower than that of the PDP cell with conventional matrix electrodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.43-45
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• 1994

This paper proposes the new method to calculate the static thrust and normal force of a hybrid type double-sided linear pulse motor by the coenergy which considered the magnetic nonlinealities. In the process of the computation, the nonlinear characteristics of the magnetic material were interpolated by the cubic spline method. And, to investigate the characteristics of the hybrid type DLPM, the static thrust and the normal force is shown as a function of displacement, input current and air airgap length. Also the simulation values are compared with the experimental ones obtained from a hybrid type DLPM.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.386-387
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• 2013

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGBT module type, IGBT press-pack type, and IGCT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral-point clamed 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that IGBT press-pack type semiconductor device has the highest efficiency and IGCT has the lowest cost factor considering the necessary auxiliary components.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.90-94
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• 2018

In this paper, we applied a three-level T-type inverter with the one more voltage level than two-level inverter. However, the three-level T-type inverter has a systematic problem with voltage unbalances. So neutral point control is essential. Therefore, the voltage unbalance problem of the three - phase inverter was confirmed to be controlled within 5V using the neutral point control algorithm in charge and discharge mode. In addition, total harmonic distortion was reduced in three phases (u phase, v phase, w phase) when neutral point control was performed in charging mode and also in three phases (u phase, v phase, w phase) in discharge mode. In this paper suggests a neutral point control algorithm to solve the voltage unbalance of a three-level T-type inverter, and shows the improvement of the performance of the proposed algorithm through experiment.

• 대한수학회보
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• 제56권5호
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• pp.1117-1127
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• 2019

Let ${\mathcal{L}}_2=(-{\Delta})^2+V^2$ be the $Schr{\ddot{o}}dinger$ type operator, where nonnegative potential V belongs to the reverse $H{\ddot{o}}lder$ class $RH_s$, s > n/2. In this paper, we consider the operator $T_{{\alpha},{\beta}}=V^{2{\alpha}}{\mathcal{L}}^{-{\beta}}_2$ and its conjugate $T^*_{{\alpha},{\beta}}$, where $0<{\alpha}{\leq}{\beta}{\leq}1$. We establish the $(L^p,\;L^q)$-boundedness of operator $T_{{\alpha},{\beta}}$ and $T^*_{{\alpha},{\beta}}$, respectively, we also show that $T_{{\alpha},{\beta}}$ is bounded from Hardy type space $H^1_{L_2}({\mathbb{R}}^n)$ into $L^{p_2}({\mathbb{R}}^n)$ and $T^*_{{\alpha},{\beta}}$ is bounded from $L^{p_1}({\mathbb{R}}^n)$ into BMO type space $BMO_{{\mathcal{L}}1}({\mathbb{R}}^n)$, where $p_1={\frac{n}{4({\beta}-{\alpha})}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})}}$.

• 대한원격탐사학회지
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• 제38권4호
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• pp.435-446
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• 2022

Identifying ship types is an important process to prevent illegal activities on territorial waters and assess marine traffic of Vessel Traffic Services Officer (VTSO). However, the Terrestrial Automatic Identification System (T-AIS) collected at the ground station has over 50% of vessels that do not contain the ship type information. Therefore, this study proposes a method of identifying ship types through the Random Forest Classifier (RFC) from dynamic and static data of AIS and V-Pass for one year and the Ulsan waters. With the hypothesis that six features, the speed, course, length, breadth, time, and location, enable to estimate of the ship type, four classification models were generated depending on length or breadth information since 81.9% of ships fully contain the two information. The accuracy were average 96.4% and 77.4% in the presence and absence of size information. The result shows that the proposed method is adaptable to identifying ship types.

• 대한전자공학회논문지
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• 제23권1호
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• pp.50-57
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• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.56.2-56
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• 1998

• 대한수학회보
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• 제40권1호
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• pp.85-89
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• 2003

Let V be a localizing infinite-dimensional complex Banach space. Let X be a flag manifold of finite flags either of finite codimensional closed linear subspaces of V or of finite dimensional linear subspaces of V. Let E be a holomorphic vector bundle on X with finite rank. Here we prove that E is uniform, i.e. that for any two lines $D_1$ R in the same system of lines on X the vector bundles E$\mid$D and E$\mid$R have the same splitting type.