• Journal of the Korean neurological association
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• v.30 no.4
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• pp.333-336
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• 2012

Berardinelli-Seip congenital lipodystrophy 2 (BSCL2) gene is known to be associated with different clinical phenotypes; Silver syndrome, Charcot-Marie-Tooth type 2 with a dominant hand involvement and distal hereditary motor neuropathy type V (dHMN-V). Up to now, only two heterozygous mutations (N88S and S90L) in BSCL2 have been reported. We identified a N88S BSCL2 mutation in a dHMN-V family with a spastic gait by whole-exome sequencing. To our knowledge, this is the first report of a N88S BSCL2 mutation in Korean patient.

• Journal of Magnetics
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• v.9 no.1
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.212-213
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• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• Bulletin of the Korean Mathematical Society
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• v.59 no.3
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• pp.757-780
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• 2022

In this article, we study the weak and extra-weak type integral inequalities for the modified integral Hardy operators. We provide suitable conditions on the weights ω, ρ, φ and ψ to hold the following weak type modular inequality $${\mathcal{U}}^{-1}\({\int_{{\mid}{\mathcal{I}}f{\mid}>{\gamma}}}\;{\mathcal{U}}({\gamma}{\omega}){\rho}\){\leq}{\mathcal{V}}^{-1}\({\int}_{0}^{\infty}{\mathcal{V}}(C{\mid}f{\mid}{\phi}){\psi}\),$$ where ${\mathcal{I}}$ is the modified integral Hardy operators. We also obtain a necesary and sufficient condition for the following extra-weak type integral inequality $${\omega}\(\{{\left|{\mathcal{I}}f\right|}>{\gamma}\}\){\leq}{\mathcal{U}}{\circ}{\mathcal{V}}^{-1}\({\int}_{0}^{\infty}{\mathcal{V}}\(\frac{C{\mid}f{\mid}{\phi}}{{\gamma}}\){\psi}\).$$ Further, we discuss the above two inequalities for the conjugate of the modified integral Hardy operators. It will extend the existing results for the Hardy operator and its integral version.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.53-57
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• 2007

In paper, We evaluated for various diode type ESD protection device using TLP measurement method. An Evaluation diode is divided to Enclosed type and Stripe type as pattern style in extensive. These diodes is split up followed factor that Anode-to-Cathod space, N+ region width, Multi type and Contact to Active space. After a TLP measurement, we can be got the Vt2, It2 by I-V characteristic values. In the results, diode of enclosed type is present relatively higher Current capability(It2) than stripe type in a same voltage conditions. And the Second-breakdown voltage(Vt2) were that Stripe type's diode higher than Enclosed type's diode as have $14{\sim}15V$. Finally we suggest the best diode design condition as ESD protection device using entire consequence.

• Microbiology and Biotechnology Letters
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• v.5 no.1
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• pp.13-17
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• 1977

We isolated lactobacillus phage hosting L. casei strains, and examined distribution of the phages and resistance to the sanitary reagent treatment in drainages fo Korea plant. 1) There were Type 1, 11, 111, and 1v of the phage J$_1$in plantdrainages and the order of distribution was Type 1v>Type 11>Type 1>$^1$Type 111. 2) All the phages in plantdrainages were completely removed by spreading the invert soap. 3) Sodium hypochloride, invert soap and dresol were most effective sanitary reagents, and isopropyl alcohol and ethyl alcohol were sanitary reagents.

• Journal of the Korean institute of surface engineering
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• v.16 no.4
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• pp.173-187
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• 1983

Zinc was electrodeposited at temperature from 20$^{\circ}C$ to 60$^{\circ}C$ over the ranges of the current density from 2 to 20 A/dm2 in acid chloride bath. The cathode overpotentials increased with increasing current density and decreasing tem-perature. The (10$.$3)-(10$.$2) preferred orientation developed at cathode overpotentials below about 450mV, the (10$.$3)(10$.$2)-(10$.$1) texture developed at overpotentials between 500mV and 950mV, and the (00$.$1) (10$.$3) texture developed at cathode overpotentials about 1000mV. The (00$.$1) (10$.$3) preferred orientation was also formed at the lower potentials between 400mV and 850mV at temperatures above 40$^{\circ}C$. The preferred orientations of the zinc deposits was discussed was discussed with both cathode overpo-tential and surface energy of deposit lattice planes. The pyramid type of structure with macrostep developed at low cathode overpotentials and the truncated pyramidal type developed at higher overpotenial.

• Journal of the Korean Applied Science and Technology
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• v.18 no.4
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• pp.254-260
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• 2001

The Mo(V) $di-{\mu}-oxo$ type [$Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$] $SO_{4}$ complexes(L: 2,2'-dipyridyl,4,4'-ethylenedianlline) have been prepared by the reaction of $[Mo_{2}O_{4}(H_{2}O)_{6}]SO_{4}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$, two $H_{2}O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, $^{1}H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at a scan rate of $50mVs^{-1}$, a cathodic peak at -0.81V ${\sim}$ -0.87V (vs SCE) and an anodic peak at -0.61V ${\sim}$ -0.63V (vs SCE) have been observed in aquous solution. We infer these redox are irreversible reaction.