• Journal of the Korean Graphic Arts Communication Society
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• v.15 no.1
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• pp.1-15
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• 1997

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1993.10a
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• pp.205-210
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• 1993

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.416-419
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• 2014

We grew a $Li_6Lu(BO_3)_3:Ce^{3+}$ single crystal as a new scintillator. And, the scintillation and thermoluminescence properties of the scintillator were determined. The emission spectrum of $Li_6Lu(BO_3)_3:Ce^{3+}$ is located in the range of 370~530 nm, peaking at 416 nm and 439 nm, due to the $5d{\rightarrow}4f$ transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 34 ns (84%) and the slow component is 125 ns (16%) of the crystal. The afterglow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The thermoluminescence trap are composed a trap. The determined activation energy (E) and frequency factor (s) of the TL trap are 1.05 eV and $4.4{\times}10^{10}s^{-1}$, respectively.

• Mass Spectrometry Letters
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• v.6 no.4
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• pp.91-98
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• 2015

The Brownian motion or Wiener process, as the physical model of the stochastic procedure, is observed as an indexed collection random variables. Stochastic procedure are quite influential on the confinement potential fluctuation in the quadrupole ion trap (QIT). Such effect is investigated for a high fractional mass resolution Δm/m spectrometry. A stochastic procedure like the Wiener or Brownian processes are potentially used in quadrupole ion traps (QIT). Issue examined are the stability diagrams for noise coefficient, η=0.07;0.14;0.28 as well as ion trajectories in real time for noise coefficient, η=0.14. The simulated results have been obtained with a high precision for the resolution of trapped ions. Furthermore, in the lower mass range, the impulse voltage including the stochastic potential can be considered quite suitable for the quadrupole ion trap with a higher mass resolution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• The Korean Journal of Ecology
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• v.20 no.4
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• pp.251-258
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• 1997

Few attempts have been made to discover the ecological function of coarse woody debris (CWD) despite its importance to small mammal population. Twenty-five pitfall traps and a hundred live traps were placed in three sites with high amounts of CWD and three sites with low amounts of CWD. Eleven species were caught, and Peromyscus maniculatus was the most abundant (45.6%, n=605). Among 11 speices, abundance of Tamias townsendii and Clethronomys gapperi were higher in sites with high amounts of CWD than in sites with low amounts of CWD. Home range size was larger in breeding season than in non-breeding season indicating mating search. Resident time of Peromyscus maniculatus was longer in sites with high amounts of CWD implying better stability in population. The increasing amount of coarse woody debris (CWD) enhanced the habitat use by small mammals, and animals in high amounts of CWD were more abundant and stable in population fluctuation. This study, therefore, concludes that CWD is a critical habitat element for small mammals in forest ecosystem.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.243-248
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• 2015

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.