• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.141-145
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• 2011

ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.604-607
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• 2005

Dependence of the crystallinity, surface roughness, carrier concentration, carrier mobility, electrical resistivity and transmittance of Al-doped ZnO films deposited on glass substrates by RF-magnetron sputtering on effects of the ratio of the RF power for AlZnO to that for ZnO (R) have been investigated. X-ray diffraction spectra show strong preferred orientation along the c-axis. The full width at half maximum (FWHM) of the ZnO (002) peak decreases slightly as R increases in the range of R<1.0, whereas it increases substantially in the range of R>1.0. Scanning electron micrographs (SEM) show that the ZnO film surface becomes coarse as R increases. The carrier concentration and the carrier mobility in the ZnO thin film are maximal for R=1.5 and 1.0, respectively. The electrical resistivity is minimal for R=1.0 The transmittance of the ZnO:Al film tends to increase, but to decrease slightly in the range of R>0.5. It may be concluded that the optimum R value is 1.0, considering all these analysis results. The cause of the changes in the structure and physical properties of ZnO thin films with R are also discussed.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.171-176
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• 1998

Transparent conducting ITO (Indium Tin Oxide) thin films were prepared on soda lime glass by reactive dc magnetron sputtering mothod. The maaterial properties were measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a resuIts, the (400) park for $O_2 gas rate 2% grows uniquely as the preferred orientaon. However, the (400) peak exists at $O_2 gas rate 5% as well as the (222) peak appears abruptly as the main orietation. Both <100> and <111> grain alignments are consisted simultaneously in the XRE pattern of ITO thin films. The electrical charcteristics were esimated by the electrical resistivity, optical transmission, and Hall mobillty, ect. The resistivity of ITO thin film deposited at 4cm from the substrate center is increased from $2\times10^-4$ to $8\times10^-4\Omega$cm as a function of $O_2$ gas pressure (0~5%). The optical transmission curves with a rising of $O_2$ gas rate become shifted into longer wavelength range.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.90-90
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• 2011

Transparent conducting oxide (TCO) films have been intensively utilized in the electric applications, such as, displays, lightings and solar cells due to the good electric conductivity with an excellent transmittance of the visible light. We, herein present an excellent Al-doped ZnO film (AZO), which has been fabricated by co-sputtering method. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of $7.8{\times}10^{-3}{\Omega}cm$. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and $1{\times}10^{-3}{\Omega}cm$, respectively. The fabricated AZO film was fabricated for a metal-semiconductor-metal (MSM) structure. The AZO film-embedding MSM device was highly responsive to a UV light.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.15-18
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• 2000

Transparent conducting tin (IV) oxide thin films have been studied and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process conditions and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.01-cm and the transmittance is higher than $90\%$ in a visible range.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1430-1431
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• 2011

To develope the transparent conducting oxide(TCO) films is one of the essential technologies to improve various properties of electro-optical devices such as dye-sensitized solar cells(DSCs). ITiO thin film is considered one of the candidates as TCO electrodes of DSCs because it shows many advantages such as the high transparency in long wavelength range above 700nm and excellent properties of electrical necking between nanoporous TiO2 and ITiO transparent electrode. This paper presents the effect of sputtering processes on the structural, electrical and optical properties of ITiO thin film deposited by r.f. magnetron sputtering. The effect of doping concentration of Ti on the chemical compounds and C axis-orientation properties of were mainly studied experimentally. The morphology and electrical properties were greatly influenced by deposition processes, especially by the doping concentration of Ti. The $3.8{\times}10^{-4}{\Omega}{\cdot}cm$ of minimum volume resistivity were obtained under the experimental conditions of gas pressure 7mTorr, substrate temperature $300^{\circ}C$, and 2.5% of Ti doping concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.252-252
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• 2014

투명전극 제조에 이용되고 있는 진공기반 ITO공정의 제조 단가를 줄이기 위하여 용액 기반의 투명전극 제조 기술에 대한 연구를 수행 하였다. 용액공정을 수행하기 위하여 ITO 나노입자를 이용한 잉크를 제조하고 이를 잉크젯 인쇄공정에 적용하여 ITO 투명전극을 제조하였다. 열처리 온도에 따른 전기적 광학적 특성에 대한 분석을 진행하였다. 전기적 물성의 극대화를 위해 Ag metal grid를 인쇄공정을 통해 제작하고 용액기반 ITO 박막과 융합화(hybridization) 시켰다. Ag metal grid의 line width를 최소화 하기 위하여 전기수력학 방식의 잉크젯 시스템을 사용하여 metal grid를 형성하였고 Ag metal grid는 약 10um의 선폭을 가졌다. 인쇄된 Ag-grid/ITO 박막의 경우 550 nm파장에서(Ag grid pitch: 500 um기준) 약88%의 투과도를 보이며 저항이 $5{\Omega}/{\square}$ 이하의 특성을 나타내었다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.65-69
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• 2007

A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as UV irradiation time, oxygen flow rate, and chamber pressure. The statistical significance of Ultra Violet (UV) treatment was confirmed using a paired-t test. The full factorial $2^3$ design was employed to determine significant main and interaction effects in UV irradiation process. The chamber pressure and the interaction between UV irradiation time and $O_2$ flow rate were found to be statistically significant at the significance level of 0.1. Furthermore, the optimized approach was proposed in achieving the improved conductivity after UV irradiation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.103-104
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• 2007

$CuInO_2$ 단일상은 합성조건이 매우 까다롭기 때문에 일반적인 고상법으로 얻기 힘든 것으로 알려저 있다. 투명전도성 $CuInO_2$ 박막을 증착하기 위하여 일반적인 고상법으로 Cu와 In의 비율이 1:1인 $Cu_2O-In_2O_3$ composite target 및 In 대신 Ca, Mg, Ti가 각각 1mol% 도핑된 target을 제작하였다. 제작된 각각의 composite target을 이용하여 pulsed laser deposition(PLD) 공정으로 투명전도성 $CuInO_2$ 박막을 증착하였다. Cu와 In이 1:1 인 $Cu_2O-In_2O_3$ composite target을 사용한 경우, 증착된 박막이 Cu와 In의 비율이 1:1인 c-axis 배향된 단일상의 $CuInO_2$ 박막임을 확인하였다.