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http://dx.doi.org/10.3740/MRSK.2005.15.9.604

Effects of Al Doping Concentration on the Microstructure and Physical Properties of ZnO Thin Films Deposited by Cosputtering  

Yim, Keun-Bin (Department of Materials Science and Engineering, Inha University)
Lee, Chong-Mu (Department of Materials Science and Engineering, Inha University)
Publication Information
Korean Journal of Materials Research / v.15, no.9, 2005 , pp. 604-607 More about this Journal
Abstract
Dependence of the crystallinity, surface roughness, carrier concentration, carrier mobility, electrical resistivity and transmittance of Al-doped ZnO films deposited on glass substrates by RF-magnetron sputtering on effects of the ratio of the RF power for AlZnO to that for ZnO (R) have been investigated. X-ray diffraction spectra show strong preferred orientation along the c-axis. The full width at half maximum (FWHM) of the ZnO (002) peak decreases slightly as R increases in the range of R<1.0, whereas it increases substantially in the range of R>1.0. Scanning electron micrographs (SEM) show that the ZnO film surface becomes coarse as R increases. The carrier concentration and the carrier mobility in the ZnO thin film are maximal for R=1.5 and 1.0, respectively. The electrical resistivity is minimal for R=1.0 The transmittance of the ZnO:Al film tends to increase, but to decrease slightly in the range of R>0.5. It may be concluded that the optimum R value is 1.0, considering all these analysis results. The cause of the changes in the structure and physical properties of ZnO thin films with R are also discussed.
Keywords
RF-magnetron sputtering; RF power; transparent conducting oxide(TCO); transmittance;
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