Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 31 Issue 3
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- Pages.171-176
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- 1998
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Effects of Oxygen Partial Pressure on ITO Thin Films PrePared by Reactive dc Magenetron Sputtering
반응성 dc 미그네트론 스퍼링법으로 제조된 IPO박막에 미치는 산소분압의 영향
Abstract
Transparent conducting ITO (Indium Tin Oxide) thin films were prepared on soda lime glass by reactive dc magnetron sputtering mothod. The maaterial properties were measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a resuIts, the (400) park for
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